Fang; Yan-Yan
Patent Applications and Registrations
Patent applications and USPTO patent grants for Fang; Yan-Yan.The latest application filed is for "methods and compositions for preparing tensile strained ge on ge1-ysny buffered semiconductor substrates".
- Fang; Yan-Yan - Pujiang CN
- Fang; Yan-Yan - Tempe AZ
| Patent | Date |
|---|---|
| Methods for making and using halosilylgermanes Grant 8,043,980 - Kouvetakis , et al. October 25, 2 | 2011-10-25 |
| Methods and Compositions for Preparing Tensile Strained Ge on Ge1-ySNy Buffered Semiconductor Substrates App 20110198729 - Kouvetakis; John ; et al. | 2011-08-18 |
| Methods and compositions for preparing tensile strained Ge on Ge.sub.1-ySn.sub.y buffered semiconductor substrates Grant 7,915,104 - Kouvetakis , et al. March 29, 2 | 2011-03-29 |
| Methods and compositions for preparing Ge/Si semiconductor substrates Grant 7,910,468 - Kouvetakis , et al. March 22, 2 | 2011-03-22 |
| Methods and Compositions for Preparing Ge/Si Semiconductor Substrates App 20110062496 - Kouvetakis; John ; et al. | 2011-03-17 |
| Selective Deposition Of Sige Layers From Single Source Of Si-ge Hydrides App 20110045646 - Kouvetakis; John ; et al. | 2011-02-24 |
| Novel Methods for Making and Using Halosilylgermanes App 20100151666 - Kouvetakis; John ; et al. | 2010-06-17 |
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