Patent | Date |
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Method for fabricating InGaN-based multi-quantum well layers Grant 8,461,029 - Jiang , et al. June 11, 2 | 2013-06-11 |
Method for fabricating a low-resistivity ohmic contact to a p-type III-V nitride semiconductor material at low temperature Grant 8,431,475 - Jiang , et al. April 30, 2 | 2013-04-30 |
Method for fabricating a p-type semiconductor structure Grant 8,431,936 - Jiang , et al. April 30, 2 | 2013-04-30 |
InGaAIN light-emitting device and manufacturing method thereof Grant 8,384,100 - Jiang , et al. February 26, 2 | 2013-02-26 |
Method for fabricating InGaAIN light-emitting diodes with a metal substrate Grant 8,383,438 - Xiong , et al. February 26, 2 | 2013-02-26 |
Semiconductor light-emitting device with metal support substrate Grant 8,361,880 - Jiang , et al. January 29, 2 | 2013-01-29 |
METHOD FOR FABRICATING InGaN-BASED MULTI-QUANTUM WELL LAYERS App 20120295422 - Jiang; Fengyi ;   et al. | 2012-11-22 |
Method For Fabricating An N-type Semiconductor Material Using Silane As A Precursor App 20110298005 - Jiang; Fengyi ;   et al. | 2011-12-08 |
Gallium nitride light-emitting device with ultra-high reverse breakdown voltage Grant 8,053,757 - Jiang , et al. November 8, 2 | 2011-11-08 |
LIGHT-EMITTING DEVICE BASED ON STRAIN-ADJUSTABLE InGaAIN FILM App 20110253972 - Xiong; Chuanbing ;   et al. | 2011-10-20 |
METHOD FOR FABRICATING InGaAIN LIGHT-EMITTING DIODES WITH A METAL SUBSTRATE App 20110140080 - Xiong; Chuanbing ;   et al. | 2011-06-16 |
Method For Fabricating Ingan-based Multi-quantum Well Layers App 20110133158 - Jiang; Fengyi ;   et al. | 2011-06-09 |
Semiconductor light-emitting device and method for making same Grant 7,919,784 - Jiang , et al. April 5, 2 | 2011-04-05 |
Method for fabricating high-quality semiconductor light-emitting devices on silicon substrates Grant 7,902,556 - Jiang , et al. March 8, 2 | 2011-03-08 |
Method of fabrication InGaAIN film and light-emitting device on a silicon substrate Grant 7,888,779 - Jiang , et al. February 15, 2 | 2011-02-15 |
Gallium Nitride Light-emitting Device With Ultra-high Reverse Breakdown Voltage App 20110006319 - Jiang; Fengyi ;   et al. | 2011-01-13 |
Method For Fabricating A Low-resistivity Ohmic Contact To A P-type Iii-v Nitride Semiconductor Material At Low Temperature App 20100219394 - Jiang; Fengyi ;   et al. | 2010-09-02 |
Method for fabricating metal substrates with high-quality surfaces Grant 7,758,695 - Xiong , et al. July 20, 2 | 2010-07-20 |
Semiconductor light-emitting device with electrode for N-polar InGaAIN surface Grant 7,705,348 - Wang , et al. April 27, 2 | 2010-04-27 |
Semiconductor light-emitting device Grant 7,692,205 - Wang , et al. April 6, 2 | 2010-04-06 |
Method for manufacturing indium gallium aluminium nitride thin film on silicon substrate Grant 7,615,420 - Jiang , et al. November 10, 2 | 2009-11-10 |
METHOD OF FABRICATION InGaAlN FILM AND LIGHT-EMITTING DEVICE ON A SILICON SUBSTRATE App 20090050927 - Jiang; Fengyi ;   et al. | 2009-02-26 |
InGaAlN LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF App 20090026473 - Jiang; Fengyi ;   et al. | 2009-01-29 |
Method For Fabricating A P-type Semiconductor Structure App 20080315212 - Jiang; Fengyi ;   et al. | 2008-12-25 |
Semiconductor Light-Emitting Device App 20080246048 - Wang; Li ;   et al. | 2008-10-09 |
Method for Manufacturing Indium Gallium Aluminium Nitride Thin Film on Silicon Substrate App 20080248633 - Jiang; Fengyi ;   et al. | 2008-10-09 |
Semiconductor Light-Emitting Device with Electrode for N-Polar Ingaain Surface App 20080230792 - Jiang; Fengyi ;   et al. | 2008-09-25 |
Semiconductor Light-Emitting Device with Electrode for N-Polar Ingaain Surface App 20080230799 - Wang; Li ;   et al. | 2008-09-25 |
Semiconductor Light-Emitting Device With Metal Support Substrate App 20080224154 - Jiang; Fengyi ;   et al. | 2008-09-18 |
Method For Fabricating High-Quality Semiconductor Light-Emitting Devices On Silicon Substrates App 20080210951 - Jiang; Fengyi ;   et al. | 2008-09-04 |
Method for fabricating metal substrates with high-quality surfaces App 20080166582 - Xiong; Chuanbing ;   et al. | 2008-07-10 |