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name:-0.02078104019165
name:-0.017607927322388
name:-0.00059199333190918
Fang; Wenqing Patent Filings

Fang; Wenqing

Patent Applications and Registrations

Patent applications and USPTO patent grants for Fang; Wenqing.The latest application filed is for "method for fabricating ingan-based multi-quantum well layers".

Company Profile
0.20.17
  • Fang; Wenqing - Nanchang N/A CN
  • Fang; Wenqing - Jiang Xi CN
  • Fang; Wenqing - Jiangxi N/A CN
  • Fang; Wenqing - Jiangxi Province CN
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Method for fabricating InGaN-based multi-quantum well layers
Grant 8,461,029 - Jiang , et al. June 11, 2
2013-06-11
Method for fabricating a low-resistivity ohmic contact to a p-type III-V nitride semiconductor material at low temperature
Grant 8,431,475 - Jiang , et al. April 30, 2
2013-04-30
Method for fabricating a p-type semiconductor structure
Grant 8,431,936 - Jiang , et al. April 30, 2
2013-04-30
InGaAIN light-emitting device and manufacturing method thereof
Grant 8,384,100 - Jiang , et al. February 26, 2
2013-02-26
Method for fabricating InGaAIN light-emitting diodes with a metal substrate
Grant 8,383,438 - Xiong , et al. February 26, 2
2013-02-26
Semiconductor light-emitting device with metal support substrate
Grant 8,361,880 - Jiang , et al. January 29, 2
2013-01-29
METHOD FOR FABRICATING InGaN-BASED MULTI-QUANTUM WELL LAYERS
App 20120295422 - Jiang; Fengyi ;   et al.
2012-11-22
Method For Fabricating An N-type Semiconductor Material Using Silane As A Precursor
App 20110298005 - Jiang; Fengyi ;   et al.
2011-12-08
Gallium nitride light-emitting device with ultra-high reverse breakdown voltage
Grant 8,053,757 - Jiang , et al. November 8, 2
2011-11-08
LIGHT-EMITTING DEVICE BASED ON STRAIN-ADJUSTABLE InGaAIN FILM
App 20110253972 - Xiong; Chuanbing ;   et al.
2011-10-20
METHOD FOR FABRICATING InGaAIN LIGHT-EMITTING DIODES WITH A METAL SUBSTRATE
App 20110140080 - Xiong; Chuanbing ;   et al.
2011-06-16
Method For Fabricating Ingan-based Multi-quantum Well Layers
App 20110133158 - Jiang; Fengyi ;   et al.
2011-06-09
Semiconductor light-emitting device and method for making same
Grant 7,919,784 - Jiang , et al. April 5, 2
2011-04-05
Method for fabricating high-quality semiconductor light-emitting devices on silicon substrates
Grant 7,902,556 - Jiang , et al. March 8, 2
2011-03-08
Method of fabrication InGaAIN film and light-emitting device on a silicon substrate
Grant 7,888,779 - Jiang , et al. February 15, 2
2011-02-15
Gallium Nitride Light-emitting Device With Ultra-high Reverse Breakdown Voltage
App 20110006319 - Jiang; Fengyi ;   et al.
2011-01-13
Method For Fabricating A Low-resistivity Ohmic Contact To A P-type Iii-v Nitride Semiconductor Material At Low Temperature
App 20100219394 - Jiang; Fengyi ;   et al.
2010-09-02
Method for fabricating metal substrates with high-quality surfaces
Grant 7,758,695 - Xiong , et al. July 20, 2
2010-07-20
Semiconductor light-emitting device with electrode for N-polar InGaAIN surface
Grant 7,705,348 - Wang , et al. April 27, 2
2010-04-27
Semiconductor light-emitting device
Grant 7,692,205 - Wang , et al. April 6, 2
2010-04-06
Method for manufacturing indium gallium aluminium nitride thin film on silicon substrate
Grant 7,615,420 - Jiang , et al. November 10, 2
2009-11-10
METHOD OF FABRICATION InGaAlN FILM AND LIGHT-EMITTING DEVICE ON A SILICON SUBSTRATE
App 20090050927 - Jiang; Fengyi ;   et al.
2009-02-26
InGaAlN LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
App 20090026473 - Jiang; Fengyi ;   et al.
2009-01-29
Method For Fabricating A P-type Semiconductor Structure
App 20080315212 - Jiang; Fengyi ;   et al.
2008-12-25
Semiconductor Light-Emitting Device
App 20080246048 - Wang; Li ;   et al.
2008-10-09
Method for Manufacturing Indium Gallium Aluminium Nitride Thin Film on Silicon Substrate
App 20080248633 - Jiang; Fengyi ;   et al.
2008-10-09
Semiconductor Light-Emitting Device with Electrode for N-Polar Ingaain Surface
App 20080230792 - Jiang; Fengyi ;   et al.
2008-09-25
Semiconductor Light-Emitting Device with Electrode for N-Polar Ingaain Surface
App 20080230799 - Wang; Li ;   et al.
2008-09-25
Semiconductor Light-Emitting Device With Metal Support Substrate
App 20080224154 - Jiang; Fengyi ;   et al.
2008-09-18
Method For Fabricating High-Quality Semiconductor Light-Emitting Devices On Silicon Substrates
App 20080210951 - Jiang; Fengyi ;   et al.
2008-09-04
Method for fabricating metal substrates with high-quality surfaces
App 20080166582 - Xiong; Chuanbing ;   et al.
2008-07-10

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