Fang; Jingxun

Patent Applications and Registrations

Patent applications and USPTO patent grants for Fang; Jingxun.The latest application filed is for "method for avoiding il regrown in a hkmg process".

Company Profile

0.7.9

Fang; Jingxun - Shanghai CN

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method for avoiding IL regrown in a HKMG process Grant 10,651,285 - Liu , et al.	2020-05-12
Method For Avoiding Il Regrown In A Hkmg Process App 20180175157 - Liu; Yingming ; et al.	2018-06-21
Method For Forming Cobalt Barrier Layer And Metal Interconnection Process App 20160300758 - Lei; Tong ; et al.	2016-10-13
Method for forming cobalt barrier layer and metal interconnection process Grant 9,449,872 - Lei , et al. September 20, 2	2016-09-20
Method of forming strained source and drain regions in a P-type finFET structure Grant 8,987,101 - Ding , et al. March 24, 2	2015-03-24
Method Of Forming Strained Source And Drain Regions In A P-type Finfet Structure App 20140357041 - Ding; Yi ; et al.	2014-12-04
Method Of Forming Sigma-shaped Trench App 20140322879 - LI; Quanbo ; et al.	2014-10-30
Method of forming Cu interconnects Grant 8,772,157 - Fang July 8, 2	2014-07-08
Method Of Forming Cu Interconnects App 20140127900 - FANG; Jingxun	2014-05-08
Fabrication method for improving surface planarity after tungsten chemical mechanical polishing Grant 8,673,768 - Fang , et al. March 18, 2	2014-03-18
Algorithm of Cu interconnect dummy inserting Grant 8,645,879 - Fang , et al. February 4, 2	2014-02-04
Fabrication Method For Improving Surface Planarity After Tungsten Chemical Mechanical Polishing App 20130224949 - FANG; Jingxun ; et al.	2013-08-29
Algorithm Of Cu Interconnect Dummy Inserting App 20130227502 - FANG; JINGXUN ; et al.	2013-08-29

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