| Patent | Date |
|---|
ESD protection trigger circuit
Grant 7,969,699 - Fan , et al. June 28, 2 | 2011-06-28 |
Esd Protection Trigger Circuit
App 20100033884 - Fan; Tso-Hung ; et al. | 2010-02-11 |
Method Of Programming And Erasing Multi-level Flash Memory
App 20070159893 - FAN; TSO-HUNG ; et al. | 2007-07-12 |
Method of programming and erasing multi-level flash memory
Grant 7,173,849 - Fan , et al. February 6, 2 | 2007-02-06 |
Method for programming and erasing non-volatile memory with nitride tunneling layer
Grant 7,002,849 - Fan , et al. February 21, 2 | 2006-02-21 |
Method of programming and erasing multi-level flash memory
App 20050270844 - Fan, Tso-Hung ; et al. | 2005-12-08 |
Method of programming and erasing multi-level flash memory
Grant 6,958,934 - Fan , et al. October 25, 2 | 2005-10-25 |
Structure of two-bit mask read-only memory device and fabricating method thereof
Grant 6,919,607 - Liu , et al. July 19, 2 | 2005-07-19 |
ONO flash memory array for improving a disturbance between adjacent memory cells
Grant 6,917,073 - Liu , et al. July 12, 2 | 2005-07-12 |
Method for programming and erasing non-volatile memory with nitride tunneling layer
App 20050082597 - Fan, Tso-Hung ; et al. | 2005-04-21 |
Chalcogenide memory and method of manufacturing the same
Grant 6,838,691 - Liu , et al. January 4, 2 | 2005-01-04 |
Method for programming and erasing non-volatile memory with nitride tunneling layer
Grant 6,834,013 - Fan , et al. December 21, 2 | 2004-12-21 |
Fabrication method for mask read only memory device
Grant 6,790,730 - Fan , et al. September 14, 2 | 2004-09-14 |
Trim circuit and method for tuning a current level of a reference cell in a flash memory
Grant 6,785,163 - Yeh , et al. August 31, 2 | 2004-08-31 |
Structure of a mask ROM device
Grant 6,713,821 - Fan , et al. March 30, 2 | 2004-03-30 |
Fabrication method for a flash memory device with a split floating gate and a structure thereof
Grant 6,709,921 - Yeh , et al. March 23, 2 | 2004-03-23 |
Method for fabricating a non-volatile memory
Grant 6,706,575 - Fan , et al. March 16, 2 | 2004-03-16 |
Reference current generation circuit for multiple bit flash memory
Grant 6,687,160 - Fan , et al. February 3, 2 | 2004-02-03 |
Reference current generating circuit of multiple bit flash memory
Grant 6,665,212 - Fan , et al. December 16, 2 | 2003-12-16 |
Nitride read-only memory cell for improving second-bit effect and method for making thereof
Grant 6,649,971 - Yeh , et al. November 18, 2 | 2003-11-18 |
Structure of two-bit mask read-only memory device and fabricating method thereof
App 20030205764 - Liu, Mu-Yi ; et al. | 2003-11-06 |
Reference current generation circuit for multiple bit flash memory
Grant 6,643,176 - Fan , et al. November 4, 2 | 2003-11-04 |
Structure of a mask ROM device
App 20030201501 - Fan, Tso-Hung ; et al. | 2003-10-30 |
Trim circuit and method for tuning a current level of a reference cell in a flash memory
App 20030179603 - Yeh, Chih-Chieh ; et al. | 2003-09-25 |
Device and method for converging erased flash memories
App 20030174540 - Fan, Tso-Hung ; et al. | 2003-09-18 |
Chalcogenide memory and method of manufacturing the same
App 20030166340 - Liu, Mu-Yi ; et al. | 2003-09-04 |
Test structure and method for flash memory tunnel oxide quality
Grant 6,613,595 - Fan , et al. September 2, 2 | 2003-09-02 |
Method for fabricating nitride read only memory
Grant 6,607,957 - Fan , et al. August 19, 2 | 2003-08-19 |
Flash memory with virtual ground scheme
App 20030137000 - Fan, Tso-Hung ; et al. | 2003-07-24 |
Method for fabricating a non-volatile memory
App 20030134462 - Fan, Tso-Hung ; et al. | 2003-07-17 |
Test structure and method for flash memory tunnel oxide quality
App 20030134442 - Fan, Tso-Hung ; et al. | 2003-07-17 |
Method for fabricating a high voltage device
App 20030134463 - Liu, Mu-Yi ; et al. | 2003-07-17 |
Method of programming and erasing multi-level flash memory
App 20030135689 - Fan, Tso-Hung ; et al. | 2003-07-17 |
Structure and method for fabricating a semiconductor device
App 20030107052 - Chan, Kwang-Yang ; et al. | 2003-06-12 |
Method for programming and erasing non-volatile memory with nitride tunneling layer
App 20030103383 - Fan, Tso-Hung ; et al. | 2003-06-05 |
Non-volatile semiconductor memory device with multi-layer gate insulating structure
App 20030089935 - Fan, Tso-Hung ; et al. | 2003-05-15 |
Method for reducing the drain coupling ratio of floating gate device
App 20030082892 - Fan, Tso-Hung ; et al. | 2003-05-01 |
Fabrication method for a flash memory device with a split floating gate and a structure thereof
App 20030060010 - Yeh, Yen-Hung ; et al. | 2003-03-27 |
Structure of a non-volatile memory
App 20030034516 - Fan, Tso-Hung ; et al. | 2003-02-20 |
Method of programming and erasing a SNNNS type non-volatile memory cell
Grant 6,512,696 - Fan , et al. January 28, 2 | 2003-01-28 |
Method Of Fabricating Flash Memory With Shallow And Deep Junctions
App 20020137283 - Fan, Tso Hung ; et al. | 2002-09-26 |
Method for fabricating a memory device with a floating gate
Grant 6,444,523 - Fan , et al. September 3, 2 | 2002-09-03 |
Method of fabricating a mask ROM with raised bit-line on each buried bit-line
Grant 6,440,803 - Huang , et al. August 27, 2 | 2002-08-27 |
Method for enhancing the growth rate of a silicon dioxide layer grown by liquid phase deposition
Grant 5,648,128 - Yeh , et al. July 15, 1 | 1997-07-15 |
| 