Faltermeier; Johnathan E.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Faltermeier; Johnathan E..The latest application filed is for "high-k layer chamfering to prevent oxygen ingress in replacement metal gate (rmg) process".

Company Profile

1.58.57

Faltermeier; Johnathan E. - Delanson NY
Faltermeier; Johnathan E. - San Jose CA
Faltermeier; Johnathan E. - Albany NY US
Faltermeier; Johnathan E. - Lagrangeville NY
Faltermeier; Johnathan E. - Fishkill NY
Faltermeier, Johnathan E. - Lagrange NY

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Replacement metal gate stack for diffusion prevention Grant 10,332,971 - Ando , et al.	2019-06-25
Gate structure cut after formation of epitaxial active regions Grant 10,008,415 - Cai , et al. June 26, 2	2018-06-26
High-k Layer Chamfering To Prevent Oxygen Ingress In Replacement Metal Gate (rmg) Process App 20180145150 - Ando; Takashi ; et al.	2018-05-24
Replacement Metal Gate Stack For Diffusion Prevention App 20180083117 - Ando; Takashi ; et al.	2018-03-22
Replacement metal gate stack for diffusion prevention Grant 9,905,665 - Ando , et al. February 27, 2	2018-02-27
High-K layer chamfering to prevent oxygen ingress in replacement metal gate (RMG) process Grant 9,865,703 - Ando , et al. January 9, 2	2018-01-09
Partially dielectric isolated fin-shaped field effect transistor (FinFET) Grant 9,735,277 - Cheng , et al. August 15, 2	2017-08-15
High-k Layer Chamfering To Prevent Oxygen Ingress In Replacement Metal Gate (rmg) Process App 20170194459 - Ando; Takashi ; et al.	2017-07-06
Partially Dielectric Isolated Fin-shaped Field Effect Transistor (finfet) App 20170170323 - Cheng; Kangguo ; et al.	2017-06-15
Gate Structure Cut After Formation Of Epitaxial Active Regions App 20170140994 - Cai; Xiuyu ; et al.	2017-05-18
Gate structure cut after formation of epitaxial active regions Grant 9,633,906 - Cai , et al. April 25, 2	2017-04-25
Gate structure cut after formation of epitaxial active regions Grant 9,559,009 - Cai , et al. January 31, 2	2017-01-31
Partially dielectric isolated fin-shaped field effect transistor (FinFET) Grant 9,537,011 - Cheng , et al. January 3, 2	2017-01-03
Nitridation on HDP oxide before high-k deposition to prevent oxygen ingress Grant 9,472,408 - Ando , et al. October 18, 2	2016-10-18
Nitridation on HDP oxide before high-k deposition to prevent oxygen ingress Grant 9,412,596 - Ando , et al. August 9, 2	2016-08-09
Nitridation On Hdp Oxide Before High-k Deposition To Prevent Oxygen Ingress App 20160225628 - Ando; Takashi ; et al.	2016-08-04
Nitridation On Hdp Oxide Before High-k Deposition To Prevent Oxygen Ingress App 20160225629 - Ando; Takashi ; et al.	2016-08-04
Replacement Metal Gate Stack For Diffusion Prevention App 20160197157 - Ando; Takashi ; et al.	2016-07-07
FinFET spacer formation by oriented implantation Grant 9,337,315 - Basker , et al. May 10, 2	2016-05-10
Method for improving device performance using epitaxially grown silicon carbon (SiC) or silicon-germanium (SiGe) Grant 9,331,174 - Doris , et al. May 3, 2	2016-05-03
FinFET spacer formation by oriented implantation Grant 9,318,578 - Basker , et al. April 19, 2	2016-04-19
Replacement metal gate stack for diffusion prevention Grant 9,312,136 - Ando , et al. April 12, 2	2016-04-12
Semiconductor structure having buried conductive elements Grant 9,263,454 - Alptekin , et al. February 16, 2	2016-02-16
Handler Wafer Removal By Use Of Sacrificial Inert Layer App 20160035616 - Cheng; Kangguo ; et al.	2016-02-04
Gate Structure Cut After Formation Of Epitaxial Active Regions App 20160027700 - Cai; Xiuyu ; et al.	2016-01-28
Semiconductor structure having buried conductive elements Grant 9,245,892 - Alptekin , et al. January 26, 2	2016-01-26
finFETs containing improved strain benefit and self aligned trench isolation structures Grant 9,240,447 - Cheng , et al. January 19, 2	2016-01-19
Semiconductor Structure Having Buried Conductive Elements App 20150364476 - Alptekin; Emre ; et al.	2015-12-17
Replacement Metal Gate Stack For Diffusion Prevention App 20150255458 - Ando; Takashi ; et al.	2015-09-10
Semiconductor Structure Having Buried Conductive Elements App 20150236024 - Alptekin; Emre ; et al.	2015-08-20
Gate Structure Cut After Formation Of Epitaxial Active Regions App 20150214219 - Cai; Xiuyu ; et al.	2015-07-30
Highly scalable trench capacitor Grant 8,932,932 - Cheng , et al. January 13, 2	2015-01-13
Device structure, layout and fabrication method for uniaxially strained transistors Grant 8,933,515 - Bedell , et al. January 13, 2	2015-01-13
Uniform finFET gate height Grant 8,928,057 - Cote , et al. January 6, 2	2015-01-06
High-K/metal gate CMOS finFET with improved pFET threshold voltage Grant 8,901,664 - Basker , et al. December 2, 2	2014-12-02
Uniform Finfet Gate Height App 20140151772 - Cote; William ; et al.	2014-06-05
Finfet Spacer Formation By Oriented Implantation App 20140131801 - Basker; Veeraraghavan S. ; et al.	2014-05-15
FinFET spacer formation by oriented implantation Grant 8,716,797 - Basker , et al. May 6, 2	2014-05-06
Method of forming a planar field effect transistor with embedded and faceted source/drain stressors on a silicon-on-insulator (SOI) wafer, a planar field effect transistor structure and a design structure for the planar field effect transistor Grant 8,525,186 - Cheng , et al. September 3, 2	2013-09-03
Stress enhanced transistor devices and methods of making Grant 8,513,718 - Faltermeier , et al. August 20, 2	2013-08-20
Highly Scalable Trench Capacitor App 20130203234 - Cheng; Kangguo ; et al.	2013-08-08
Highly scalable trench capacitor Grant 8,492,817 - Cheng , et al. July 23, 2	2013-07-23
Spacer as hard mask scheme for in-situ doping in CMOS finFETs Grant 8,420,464 - Basker , et al. April 16, 2	2013-04-16
Self-aligned patterned etch stop layers for semiconductor devices Grant 8,367,544 - Cheng , et al. February 5, 2	2013-02-05
Finfet Spacer Formation By Oriented Implantation App 20130020642 - Basker; Veeraraghavan S. ; et al.	2013-01-24
Defect Free Si:C Epitaxial Growth App 20120305940 - Adam; Thomas N. ; et al.	2012-12-06
Spacer As Hard Mask Scheme For In-situ Doping In Cmos Finfets App 20120280250 - Basker; Veeraraghavan S. ; et al.	2012-11-08
Device Structure, Layout And Fabrication Method For Uniaxially Strained Transistors App 20120261762 - BEDELL; STEPHEN W. ; et al.	2012-10-18
Device structure, layout and fabrication method for uniaxially strained transistors Grant 8,288,218 - Bedell , et al. October 16, 2	2012-10-16
Smooth and vertical semiconductor fin structure Grant 8,268,729 - Cheng , et al. September 18, 2	2012-09-18
Stress enhanced transistor devices and methods of making Grant 8,216,893 - Faltermeier , et al. July 10, 2	2012-07-10
Stress Enhanced Transistor Devices And Methods Of Making App 20120168775 - Faltermeier; Johnathan E. ; et al.	2012-07-05
METHOD FOR IMPROVING DEVICE PERFORMANCE USING EPITAXIALLY GROWN SILICON CARBON (SiC) OR SILICON-GERMANIUM (SiGe) App 20110254015 - Doris; Bruce B. ; et al.	2011-10-20
High-k/metal Gate Cmos Finfet With Improved Pfet Threshold Voltage App 20110227165 - Basker; Veeraraghavan S. ; et al.	2011-09-22
Method Of Forming A Planar Field Effect Transistor With Embedded And Faceted Source/drain Stressors On A Silicon-on-insulator (soi) Wafer, A Planar Field Effect Transistor Structure And A Design Structure For The Planar Field Effect Transistor App 20110204384 - Cheng; Kangguo ; et al.	2011-08-25
High-K/metal gate CMOS finFET with improved pFET threshold voltage Grant 7,993,999 - Basker , et al. August 9, 2	2011-08-09
Device Structure, Layout And Fabrication Method For Uniaxially Strained Transistors App 20110175164 - Bedell; Stephen W. ; et al.	2011-07-21
Method of forming a planar field effect transistor with embedded and faceted source/drain stressors on a silicon-on-insulator (S0I) wafer, a planar field effect transistor structure and a design structure for the planar field effect transistor Grant 7,951,657 - Cheng , et al. May 31, 2	2011-05-31
High-k/metal Gate Cmos Finfet With Improved Pfet Threshold Voltage App 20110108920 - BASKER; VEERARAGHAVAN S. ; et al.	2011-05-12
Finfet Spacer Formation By Oriented Implantation App 20110101455 - Basker; Veeraraghavan S. ; et al.	2011-05-05
Source/drain junction for high performance MOSFET formed by selective EPI process Grant 7,932,136 - Hua , et al. April 26, 2	2011-04-26
Self-aligned Patterned Etch Stop Layers For Semiconductor Devices App 20110092069 - Cheng; Kangguo ; et al.	2011-04-21
DRAM having deep trench capacitors with lightly doped buried plates Grant 7,923,815 - Wang , et al. April 12, 2	2011-04-12
Self-aligned contact Grant 7,888,252 - Faltermeier , et al. February 15, 2	2011-02-15
Device With Stressed Channel App 20110031503 - Doris; Bruce B. ; et al.	2011-02-10
Method Of Forming A Planar Field Effect Transistor With Embedded And Faceted Source/drain Stressors On A Silicon-on-insulator (soi) Wafer, A Planar Field Effect Transistor Structure And A Design Structure For The Planar Field Effect Transistor App 20100295127 - Cheng; Kangguo ; et al.	2010-11-25
Uniform recess of a material in a trench independent of incoming topography Grant 7,833,872 - Cheng , et al. November 16, 2	2010-11-16
Highly Scalable Trench Capacitor App 20100207245 - Cheng; Kangguo ; et al.	2010-08-19
Self-aligned Contact App 20100210098 - Faltermeier; Johnathan E. ; et al.	2010-08-19
Stress Enhanced Transistor Devices And Methods Of Making App 20100187578 - Faltermeier; Johnathan E. ; et al.	2010-07-29
Providing isolation for wordline passing over deep trench capacitor Grant 7,705,386 - Cheng , et al. April 27, 2	2010-04-27
Smooth and vertical semiconductor fin structure App 20100048027 - Cheng; Kangguo ; et al.	2010-02-25
Source/drain Junction For High Performance Mosfet Formed By Selective Epi Process App 20090267149 - Hua; Xuefeng ; et al.	2009-10-29
Providing Isolation For Wordline Passing Over Deep Trench Capacitor App 20090173980 - Cheng; Kangguo ; et al.	2009-07-09
Dram Having Deep Trench Capacitors With Lightly Doped Buried Plates App 20090174031 - Wang; Geng ; et al.	2009-07-09
Method Of Forming A Bottle-shaped Trench By Ion Implantation App 20090170331 - Cheng; Kangguo ; et al.	2009-07-02
Polysilicon hard mask for enhanced alignment signal Grant 7,547,608 - Cheng , et al. June 16, 2	2009-06-16
Uniform Recess Of A Material In A Trench Independent Of Incoming Topography App 20090108306 - Cheng; Kangguo ; et al.	2009-04-30
Methods For Forming Nested And Isolated Lines In Semiconductor Devices App 20090104776 - Dobuzinsky; David M. ; et al.	2009-04-23
Dual Shallow Trench Isolation Structure App 20090072355 - Cheng; Kangguo ; et al.	2009-03-19
Trench capacitor with void-free conductor fill Grant 7,494,891 - Cheng , et al. February 24, 2	2009-02-24
Semiconductor Etching Methods App 20090047791 - Dobuzinsky; David M. ; et al.	2009-02-19
STI formation in semiconductor device including SOI and bulk silicon regions Grant 7,394,131 - Steigerwalt , et al. July 1, 2	2008-07-01
Trench Capacitor with Void-Free Conductor Fill App 20080076230 - Cheng; Kangguo ; et al.	2008-03-27
Trench Capacitor Having Lateral Extensions In Only One Direction And Related Methods App 20070267671 - Cheng; Kangguo ; et al.	2007-11-22
Polysilicon Hard Mask For Enhanced Alignment Signal App 20070262475 - Cheng; Kangguo ; et al.	2007-11-15
Low-cost deep trench decoupling capacitor device and process of manufacture Grant 7,193,262 - Ho , et al. March 20, 2	2007-03-20
Sti Formation In Semiconductor Device Including Soi And Bulk Silicon Regions App 20060244093 - Steigerwalt; Michael D. ; et al.	2006-11-02
STI formation in semiconductor device including SOI and bulk silicon regions Grant 7,118,986 - Steigerwalt , et al. October 10, 2	2006-10-10
Microelectronic element having trench capacitors with different capacitance values Grant 7,084,449 - Cheng , et al. August 1, 2	2006-08-01
Low-Cost Deep Trench Decoupling Capacitor Device and Process of Manufacture App 20060124982 - Ho; Herbert L. ; et al.	2006-06-15
Sti Formation In Semiconductor Device Including Soi And Bulk Silicon Regions App 20050282392 - Steigerwalt, Michael D. ; et al.	2005-12-22
Microelectronic Element Having Trench Capacitors With Different Capacitance Values App 20050280063 - Cheng, Kangguo ; et al.	2005-12-22
STI formation for vertical and planar transistors Grant 6,893,938 - Naeem , et al. May 17, 2	2005-05-17
Self-aligned Array Contact For Memory Cells App 20050077562 - Divakaruni, Rama ; et al.	2005-04-14
Self-aligned array contact for memory cells Grant 6,870,211 - Divakaruni , et al. March 22, 2	2005-03-22
Method to improve bitline contact formation using a line mask App 20050014332 - Maldei, Michael ; et al.	2005-01-20
STI formation for vertical and planar transistors App 20040209486 - Naeem, Munir D. ; et al.	2004-10-21
Structure and method of forming bitline contacts for a vertical dram array using a line bitline contact mask App 20040058480 - Nesbit, Larry A. ; et al.	2004-03-25
Structure and method of forming bitline contacts for a vertical DRAM array using a line bitline contact mask Grant 6,686,668 - Nesbit , et al. February 3, 2	2004-02-03
Deep slit isolation with controlled void Grant 6,518,641 - Mandelman , et al. February 11, 2	2003-02-11
Oxidation of silicon nitride films in semiconductor devices App 20020182893 - Ballantine, Arne W. ; et al.	2002-12-05
Deep Slit Isolation With Controlled Void App 20020171118 - Mandelman, Jack A. ; et al.	2002-11-21
Structure and method of forming bitline contacts for a vertical DRAM array using a line bitline contact mask App 20020093112 - Nesbit, Larry A. ; et al.	2002-07-18
Variable stoichiometry silicon nitride barrier films for tunable etch selectivity and enhanced hyrogen permeability Grant 6,268,299 - Jammy , et al. July 31, 2	2001-07-31
Quantum conductive recrystallization barrier layers Grant 6,194,736 - Chaloux , et al. February 27, 2	2001-02-27

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