loadpatents
name:-0.0094318389892578
name:-0.0098099708557129
name:-0.00048398971557617
Faltermeier; Johnathan Patent Filings

Faltermeier; Johnathan

Patent Applications and Registrations

Patent applications and USPTO patent grants for Faltermeier; Johnathan.The latest application filed is for "trench memory with self-aligned strap formed by self-limiting process".

Company Profile
0.11.8
  • Faltermeier; Johnathan - Delanson NY
  • Faltermeier; Johnathan - LaGrange NY
  • Faltermeier; Johnathan - Lagrangeville NY
  • Faltermeier; Johnathan - Fishkill NY
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Conformal doping for FinFET devices
Grant 9,105,559 - Basker , et al. August 11, 2
2015-08-11
Trench memory with self-aligned strap formed by self-limiting process
Grant 7,893,480 - Li , et al. February 22, 2
2011-02-22
Trench memory with self-aligned strap formed by self-limiting process
Grant 7,749,835 - Li , et al. July 6, 2
2010-07-06
Trench Memory With Self-aligned Strap Formed By Self-limiting Process
App 20100102373 - Li; Xi ;   et al.
2010-04-29
Trench Memory With Self-aligned Strap Formed By Self-limiting Process
App 20090230471 - Li; Xi ;   et al.
2009-09-17
Method of reducing erosion of a nitride gate cap layer during reactive ion etch of nitride liner layer for bit line contact of DRAM device
Grant 6,960,523 - Maldei , et al. November 1, 2
2005-11-01
Pitcher-shaped active area for field effect transistor and method of forming same
Grant 6,960,514 - Beintner , et al. November 1, 2
2005-11-01
Reduced cap layer erosion for borderless contacts
Grant 6,890,815 - Faltermeier , et al. May 10, 2
2005-05-10
Reduced Cap Layer Erosion For Borderless Contacts
App 20050051839 - Faltermeier, Johnathan ;   et al.
2005-03-10
Method of reducing erosion of a nitride gate cap layer during reactive ion etch of nitride liner layer for bit line contact of DRAM device
App 20040195607 - Maldei, Michael ;   et al.
2004-10-07
Pitcher-shaped active area for field effect transistor and method of forming same
App 20040173858 - Beintner, Jochen ;   et al.
2004-09-09
Pitcher-shaped active area for field effect transistor and method of forming same
Grant 6,746,933 - Beintner , et al. June 8, 2
2004-06-08
Method to enhance epitaxial regrowth in amorphous silicon contacts
Grant 6,740,568 - Wang , et al. May 25, 2
2004-05-25
Method to enhance epi-regrowth in amorphous poly CB contacts
App 20040018680 - Wang, Yun Yu ;   et al.
2004-01-29
Method of forming low-leakage dielectric layer
App 20030082884 - Faltermeier, Johnathan ;   et al.
2003-05-01
Process flow for capacitance enhancement in a DRAM trench
Grant 6,555,430 - Chudzik , et al. April 29, 2
2003-04-29
Method for producing a flat interface for a metal-silicon contact barrier film
App 20020180046 - Wang, Yun-Yu ;   et al.
2002-12-05
Semi-insulating diffusion barrier for low-resistivity gate conductors
Grant 6,444,516 - Clevenger , et al. September 3, 2
2002-09-03
Insitu doped metal policide
Grant 6,130,145 - Ilg , et al. October 10, 2
2000-10-10

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