Falster; Robert J.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Falster; Robert J..The latest application filed is for "high resistivity single crystal silicon ingot and wafer having improved mechanical strength".

Company Profile

9.54.73

Falster; Robert J. - London GB
Falster; Robert J. - Woodstock GB
Falster; Robert J. - Milan IT
Falster, Robert J. - Milano IT

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Apparatus for stressing semiconductor substrates Grant 11,282,715 - Falster , et al. March 22, 2	2022-03-22
Apparatus for stressing semiconductor substrates Grant 11,276,582 - Falster , et al. March 15, 2	2022-03-15
Apparatus for stressing semiconductor substrates Grant 11,276,583 - Falster , et al. March 15, 2	2022-03-15
High Resistivity Single Crystal Silicon Ingot And Wafer Having Improved Mechanical Strength App 20220056616 - Basak; Soubir ; et al.	2022-02-24
High Resistivity Single Crystal Silicon Ingot And Wafer Having Improved Mechanical Strength App 20210404088 - Basak; Soubir ; et al.	2021-12-30
High resistivity single crystal silicon ingot and wafer having improved mechanical strength Grant 11,142,844 - Basak , et al. October 12, 2	2021-10-12
High Resistivity Single Crystal Silicon Ingot And Wafer Having Improved Mechanical Strength App 20200216975 - Basak; Soubir ; et al.	2020-07-09
Method of treating silicon wafers to have intrinsic gettering and gate oxide integrity yield Grant 10,707,093 - Lee , et al.	2020-07-07
Apparatus For Stressing Semiconductor Substrates App 20190333778 - Falster; Robert J. ; et al.	2019-10-31
Method of treating silicon wafers to have intrinsic gettering and gate oxide integrity yield Grant 10,453,703 - Lee , et al. Oc	2019-10-22
Apparatus For Stressing Semiconductor Substrates App 20190311913 - Falster; Robert J. ; et al.	2019-10-10
Apparatus For Stressing Semiconductor Substrates App 20190311912 - Falster; Robert J. ; et al.	2019-10-10
Apparatus For Stressing Semiconductor Substrates App 20190295853 - Falster; Robert J. ; et al.	2019-09-26
Method Of Treating Silicon Wafers To Have Intrinsic Gettering And Gate Oxide Integrity Yield App 20190267251 - Lee; Young Jung ; et al.	2019-08-29
Apparatus for stressing semiconductor substrates Grant 10,361,097 - Falster , et al.	2019-07-23
Oxygen precipitation in heavily doped silicon wafers sliced from ingots grown by the Czochralski method Grant 9,634,098 - Falster , et al. April 25, 2	2017-04-25
Processes and apparatus for preparing heterostructures with reduced strain by radial compression Grant 9,583,364 - Falster , et al. February 28, 2	2017-02-28
Processes and apparatus for preparing heterostructures with reduced strain by radial distension Grant 9,583,363 - Falster , et al. February 28, 2	2017-02-28
Silicon wafers with suppressed minority carrier lifetime degradation Grant 9,142,616 - Falster , et al. September 22, 2	2015-09-22
Production of high precipitate density wafers by activation of inactive oxygen precipitate nuclei Grant 9,129,919 - Falster , et al. September 8, 2	2015-09-08
Silicon Wafers With Suppressed Minority Carrier Lifetime Degradation App 20150123248 - Falster; Robert J. ; et al.	2015-05-07
Processes for suppressing minority carrier lifetime degradation in silicon wafers Grant 8,969,119 - Falster , et al. March 3, 2	2015-03-03
Oxygen Precipitation In Heavily Doped Silicon Wafers Sliced From Ingots Grown By The Czochralski Method App 20140361408 - Falster; Robert J. ; et al.	2014-12-11
Apparatus for Stressing Semiconductor Substrates App 20140182788 - Falster; Robert J. ; et al.	2014-07-03
Processes and Apparatus for Preparing Heterostructures with Reduced Strain by Radial Distension App 20140187022 - Falster; Robert J. ; et al.	2014-07-03
Processes and Apparatus for Preparing Heterostructures with Reduced Strain by Radial Compression App 20140187023 - Falster; Robert J. ; et al.	2014-07-03
Production Of High Precipitate Density Wafers By Activation Of Inactive Oxygen Precipitate Nuclei App 20140141537 - Falster; Robert J. ; et al.	2014-05-22
Processes For Suppressing Minority Carrier Lifetime Degradation In Silicon Wafers App 20130102129 - Falster; Robert J. ; et al.	2013-04-25
Epitaxial Wafer Having A Heavily Doped Substrate And Process For The Preparation Thereof App 20110250739 - Falster; Robert J. ; et al.	2011-10-13
Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering Grant 8,026,145 - Falster , et al. September 27, 2	2011-09-27
Suppression Of Oxygen Precipitation In Heavily Doped Single Crystal Silicon Substrates App 20110177682 - Falster; Robert J. ; et al.	2011-07-21
Non-uniform minority carrier lifetime distributions in high performance silicon power devices Grant 7,618,879 - Falster November 17, 2	2009-11-17
Epitaxial Wafer Having A Heavily Doped Substrate And Process For The Preparation Thereof App 20090252974 - Falster; Robert J. ; et al.	2009-10-08
Arsenic And Phosphorus Doped Silicon Wafer Substrates Having Intrinsic Gettering App 20090130824 - Falster; Robert J. ; et al.	2009-05-21
High resistivity silicon structure and a process for the preparation thereof Grant 7,521,382 - Falster , et al. April 21, 2	2009-04-21
Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering Grant 7,485,928 - Falster , et al. February 3, 2	2009-02-03
Single Crystal Silicon Having Improved Gate Oxide Integrity App 20090022930 - Falster; Robert J. ; et al.	2009-01-22
Suppression of Oxygen Precipitation in Heavily Doped Single Crystal Silicon Substrates App 20090004426 - Falster; Robert J. ; et al.	2009-01-01
Diffusion Control in Heavily Doped Substrates App 20090004458 - Falster; Robert J. ; et al.	2009-01-01
Process for forming low defect density, ideal oxygen precipitating silicon Grant 7,442,253 - Falster , et al. October 28, 2	2008-10-28
Process for preparing single crystal silicon having improved gate oxide integrity Grant 7,431,765 - Falster , et al. October 7, 2	2008-10-07
Silicon On Insulator Structure With A Single Crystal Cz Silicon Device Layer Having A Region Which Is Free Of Agglomerated Intrinsic Point Defects App 20080020168 - Falster; Robert J.	2008-01-24
Non-uniform Minority Carrier Lifetime Distributions In High Performance Silicon Power Devices App 20070238266 - Falster; Robert J.	2007-10-11
Process For Forming Low Defect Density, Ideal Oxygen Precipitating Silicon App 20070224783 - Falster; Robert J. ; et al.	2007-09-27
Process for making non-uniform minority carrier lifetime distribution in high performance silicon power devices Grant 7,242,037 - Falster July 10, 2	2007-07-10
Low defect density, ideal oxygen precipitating silicon Grant 7,229,693 - Falster , et al. June 12, 2	2007-06-12
Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering App 20070105279 - Falster; Robert J. ; et al.	2007-05-10
High resistivity silicon structure and a process for the preparation thereof App 20060263967 - Falster; Robert J. ; et al.	2006-11-23
Method for controlling of thermal donor formation in high resistivity CZ silicon Grant 7,135,351 - Binns , et al. November 14, 2	2006-11-14
Method for the production of low defect density silicon Grant 7,105,050 - Voronkov , et al. September 12, 2	2006-09-12
Single crystal silicon wafer having an epitaxial layer substantially free from grown-in defects Grant 7,097,718 - Mule'Stagno , et al. August 29, 2	2006-08-29
Process for producing silicon on insulator structure having intrinsic gettering by ion implantation Grant 7,071,080 - Falster , et al. July 4, 2	2006-07-04
Method for the preparation of a semiconductor substrate with a non-uniform distribution of stabilized oxygen precipitates App 20060075960 - Borgini; Marco ; et al.	2006-04-13
Process for reclaiming semiconductor wafers and reclaimed wafers Grant 7,008,874 - Falster March 7, 2	2006-03-07
Single crystal silicon having improved gate oxide integrity Grant 6,986,925 - Falster , et al. January 17, 2	2006-01-17
Process for producing silicon on insulator structure having intrinsic gettering by ion implantation App 20050255671 - Falster, Robert J. ; et al.	2005-11-17
Vacancy-dominated, defect-free silicon App 20050238905 - Falster, Robert J. ; et al.	2005-10-27
Process for preparing a stabilized ideal oxygen precipitating silicon wafer Grant 6,955,718 - Falster , et al. October 18, 2	2005-10-18
Low defect density silicon App 20050205000 - Falster, Robert J. ; et al.	2005-09-22
Silicon on insulator structure having an epitaxial layer and intrinsic gettering Grant 6,930,375 - Falster , et al. August 16, 2	2005-08-16
Low defect density, ideal oxygen precipitating silicon App 20050170610 - Falster, Robert J. ; et al.	2005-08-04
Process for preparing single crystal silicon having improved gate oxide integrity App 20050160967 - Falster, Robert J. ; et al.	2005-07-28
Control of thermal donor formation in high resistivity CZ silicon App 20050158969 - Binns, Martin Jeffrey ; et al.	2005-07-21
Process for cooling a silicon ingot having a vacancy dominated region to produce defect free silicon Grant 6,913,647 - Falster , et al. July 5, 2	2005-07-05
Method for the production of low defect density silicon App 20050132948 - Vornokov, Vladimir V. ; et al.	2005-06-23
Process for implementing oxygen into a silicon wafer having a region which is free of agglomerated intrinsic point defects App 20050130394 - Falster, Robert J.	2005-06-16
Control of oxygen precipitate formation in high resistivity CZ silicon Grant 6,897,084 - Binns , et al. May 24, 2	2005-05-24
Process for producing low defect density, ideal oxygen precipitating silicon Grant 6,896,728 - Falster , et al. May 24, 2	2005-05-24
Method for the production of low defect density silicon Grant 6,858,307 - Vornokov , et al. February 22, 2	2005-02-22
Device layer of a silicon-on-insulator structure having vacancy dominated and substantially free of agglomerated vacancy-type defects Grant 6,849,901 - Falster February 1, 2	2005-02-01
Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor Grant 6,849,119 - Falster , et al. February 1, 2	2005-02-01
Process for making non-uniform minority carrier lifetime distribution in high performance silicon power devices App 20050006796 - Falster, Robert J.	2005-01-13
Process for preparing a stabilized ideal oxygen precipitating silicon wafer App 20050005841 - Falster, Robert J. ; et al.	2005-01-13
Non-uniform minority carrier lifetime distributions in high performance silicon power devices Grant 6,828,690 - Falster December 7, 2	2004-12-07
Analytical method to measure nitrogen concentration in single crystal silicon Grant 6,803,576 - Pretto , et al. October 12, 2	2004-10-12
Thermal annealing process for producing low defect density single crystal silicon Grant 6,743,289 - Falster , et al. June 1, 2	2004-06-01
Process for producing low defect density silicon App 20040089224 - Falster, Robert J. ; et al.	2004-05-13
Low defect density silicon App 20040070012 - Falster, Robert J. ; et al.	2004-04-15
Process for the preparation of an ideal oxygen precipitating silicon wafer capable of forming an enhanced denuded zone Grant 6,713,370 - Falster March 30, 2	2004-03-30
Process for suppressing oxygen precipitation in vacancy dominated silicon Grant 6,709,511 - Falster March 23, 2	2004-03-23
Process for producing low defect density, ideal oxygen precipitating silicon App 20040025782 - Falster, Robert J. ; et al.	2004-02-12
Process for preparing low defect density silicon using high growth rates Grant 6,689,209 - Falster , et al. February 10, 2	2004-02-10
Process for producing thermally annealed wafers having improved internal gettering Grant 6,686,260 - Falster , et al. February 3, 2	2004-02-03
Process for cooling a silicon ingot having a vacancy dominated region to produce defect free silicon App 20040003770 - Falster, Robert J. ; et al.	2004-01-08
Process For The Preparation Of An Ideal Oxygen Precipitating Silicon Wafer Capable Of Forming An Enhanced Denuded Zone App 20030221609 - Falster, Robert J.	2003-12-04
Process for growing a silicon crystal segment substantially free from agglomerated intrinsic point defects which allows for variability in the process conditions Grant 6,652,646 - Falster , et al. November 25, 2	2003-11-25
Single crystal silicon wafer having an epitaxial layer substantially free from grown-in defects App 20030205191 - Mule ' Stagno, Luciano ; et al.	2003-11-06
Method for revealing agglomerated intrinsic point defects in semiconductor crystals Grant 6,638,357 - Mule'Stagno , et al. October 28, 2	2003-10-28
Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor App 20030196586 - Falster, Robert J. ; et al.	2003-10-23
Process for suppressing the nucleation and/or growth of interstitial type defects by controlling the cooling rate through nucleation App 20030196587 - McCallum, Kirk D. ; et al.	2003-10-23
Process for controlling denuded zone depth in an ideal oxygen precipitating silicon wafer App 20030192469 - Libbert, Jeffrey L. ; et al.	2003-10-16
Low defect density regions of self-interstitial dominated silicon Grant 6,605,150 - Falster , et al. August 12, 2	2003-08-12
Process for preparing defect free silicon crystals which allows for variability in process conditions App 20030116081 - Falster, Robert J. ; et al.	2003-06-26
Process for the preparation of an ideal oxygen precipitating silicon wafer having an asymmetrical vacancy concentration profile capable of forming an enhanced denuded zone Grant 6,579,779 - Falster June 17, 2	2003-06-17
Process for growing defect-free silicon wherein the grown silicon is cooled in a separate chamber Grant 6,562,123 - Falster , et al. May 13, 2	2003-05-13
Analytical method to measure nitrogen concentration in single crystal silicon App 20030068826 - Pretto, Maria Giovanna ; et al.	2003-04-10
Vacancy, dominated, defect-free silicon App 20030051657 - Falster, Robert J. ; et al.	2003-03-20
Control of thermal donor formation in high resistivity CZ silicon App 20030054641 - Binns, Martin Jeffrey ; et al.	2003-03-20
Process for producing silicon on insulator structure having intrinsic gettering by ion implantation App 20030008435 - Falster, Robert J. ; et al.	2003-01-09
Non-oxygen precipitating Czochralski silicon wafers App 20020189528 - Falster, Robert J.	2002-12-19
Method for the preparation of a semiconductor substrate with a non-uniform distribution of stabilized oxygen precipitates App 20020179006 - Borgini, Marco ; et al.	2002-12-05
Process for producing thermally annealed wafers having improved internal gettering App 20020170631 - Falster, Robert J. ; et al.	2002-11-21
Low Defect Density Epitaxial Wafer And A Process For The Preparation Thereof App 20020170485 - Falster, Robert J. ; et al.	2002-11-21
Low defect density regions of self-interstitial dominated silicon App 20020139294 - Falster, Robert J. ; et al.	2002-10-03
Process for preparing single crystal silicon having improved gate oxide integrity App 20020121238 - Falster, Robert J. ; et al.	2002-09-05
Silicon on insulator structure having a low defect density device layer and a process for the preparation thereof App 20020113265 - Falster, Robert J.	2002-08-22
Process for the preparation of non-oxygen precipitating Czochralski silicon wafers Grant 6,432,197 - Falster August 13, 2	2002-08-13
Process for growth of defect free silicon crystals of arbitrarily large diameters App 20020092460 - Falster, Robert J. ; et al.	2002-07-18
Thermal annealing process for producing low defect density single crystal silicon App 20020083889 - Falster, Robert J. ; et al.	2002-07-04
Process for reclaiming semiconductor wafers and reclaimed wafers App 20020086539 - Falster, Robert J.	2002-07-04
Vacancy, dominsated, defect-free silicon App 20020078880 - Falster, Robert J. ; et al.	2002-06-27
Method for the production of low defect density silicon App 20020056410 - Voronkov, Vladimir V. ; et al.	2002-05-16
Process for preparing low defect density silicon using high growth rates App 20020053315 - Falster, Robert J. ; et al.	2002-05-09
Thermally annealed wafers having improved internal gettering Grant 6,361,619 - Falster , et al. March 26, 2	2002-03-26
Silicon on insulator structure having a low defect density handler wafer and process for the preparation thereof Grant 6,342,725 - Falster January 29, 2	2002-01-29
Non-oxygen precipitating Czochralski silicon wafers App 20020000185 - Falster, Robert J.	2002-01-03
Silcon on insulator structrue having a low defect density handler wafer and process for the preparation thereof App 20010030348 - Falster, Robert J.	2001-10-18
Process for preparing defect free silicon crystals which allows for variability in process conditions App 20010027743 - Falster, Robert J. ; et al.	2001-10-11
Low defect density, self-interstitial dominated silicon App 20010025597 - Falster, Robert J. ; et al.	2001-10-04
Low defect density silicon and a process for producing low defect density silicon wherein V/G0 is controlled by controlling heat transfer at the melt/solid interface App 20010020437 - Falster, Robert J. ; et al.	2001-09-13
Process For Growth Of Defect Free Silicon Crystals Of Arbitrarily Large Diameters App 20010008114 - FALSTER, ROBERT J. ; et al.	2001-07-19
Process For Preparing Deffect Free Silicon Crystals Which Allows For Variability In Process Conitions App 20010003268 - FALSTER, ROBERT J. ; et al.	2001-06-14
Silicon on insulator structure from low defect density single crystal silicon Grant 6,236,104 - Falster May 22, 2	2001-05-22
Process for preparing an ideal oxygen precipitating silicon wafer Grant 6,191,010 - Falster February 20, 2	2001-02-20
Process for controlling thermal history of Czochralski-grown silicon Grant 5,779,791 - Korb , et al. July 14, 1	1998-07-14