| Patent | Date |
|---|
Silicon carbide device with Schottky contact
Grant 11,380,756 - Leendertz , et al. July 5, 2 | 2022-07-05 |
Semiconductor Device With Improved Junction Termination Extension Region
App 20220102486 - Esteve; Romain ; et al. | 2022-03-31 |
Semiconductor Device and Method for Forming a Semiconductor Device
App 20220093483 - Konrath; Jens Peter ; et al. | 2022-03-24 |
Semiconductor Device with Silicon Carbide Body and Method of Manufacturing
App 20220059659 - Siemieniec; Ralf ; et al. | 2022-02-24 |
Semiconductor device and method for forming a semiconductor device
Grant 11,217,500 - Konrath , et al. January 4, 2 | 2022-01-04 |
Method of manufacturing a silicon carbide semiconductor device with trench gate structure and vertical pn junction between body region and drift structure
Grant 11,195,946 - Meiser , et al. December 7, 2 | 2021-12-07 |
Semiconductor device with silicon carbide body
Grant 11,195,921 - Siemieniec , et al. December 7, 2 | 2021-12-07 |
Silicon Carbide Semiconductor Component
App 20210343835 - Siemieniec; Ralf ; et al. | 2021-11-04 |
Silicon carbide field-effect transistor including shielding areas
Grant 11,101,343 - Siemieniec , et al. August 24, 2 | 2021-08-24 |
Method Of Manufacturing A Silicon Carbide Semiconductor Device With Trench Gate Structure And Vertical Pn Junction Between Body Region And Drift Structure
App 20210167203 - Meiser; Andreas Peter ; et al. | 2021-06-03 |
SiC Device with Channel Regions Extending Along at least one of the (1-100) Plane and the (-1100) Plane and Methods of Manufacturing Thereof
App 20210118986 - Aichinger; Thomas ; et al. | 2021-04-22 |
SiC power semiconductor device with integrated Schottky junction
Grant 10,985,248 - Leendertz , et al. April 20, 2 | 2021-04-20 |
Silicon carbide semiconductor device with trench gate structure and vertical PN junction between body region and drift structure
Grant 10,964,808 - Meiser , et al. March 30, 2 | 2021-03-30 |
Particle irradiation apparatus, beam modifier device, and semiconductor device including a junction termination extension zone
Grant 10,915,029 - Rupp , et al. February 9, 2 | 2021-02-09 |
SiC device and methods of manufacturing thereof
Grant 10,896,952 - Aichinger , et al. January 19, 2 | 2021-01-19 |
Silicon Carbide Device with Compensation Layer and Method of Manufacturing
App 20210013310 - Leendertz; Caspar ; et al. | 2021-01-14 |
Silicon Carbide Device With Compensation Region And Method Of Manufacturing
App 20200381253 - SCHULZE; Hans-Joachim ; et al. | 2020-12-03 |
Semiconductor device with trench gate structure including a gate electrode and a contact structure for a diode region
Grant 10,734,514 - Aichinger , et al. | 2020-08-04 |
Semiconductor device with diode region
Grant 10,727,330 - Siemieniec , et al. | 2020-07-28 |
Silicon Carbide Device With Schottky Contact
App 20200219972 - LEENDERTZ; Caspar ; et al. | 2020-07-09 |
Semiconductor device having a source electrode contact trench
Grant 10,700,192 - Siemieniec , et al. | 2020-06-30 |
Semiconductor device with transistor cells and a drift structure and method of manufacturing
Grant 10,700,182 - Aichinger , et al. | 2020-06-30 |
SiC Device and Methods of Manufacturing Thereof
App 20200194544 - Aichinger; Thomas ; et al. | 2020-06-18 |
Method of producing a semiconductor device
Grant 10,679,983 - Siemieniec , et al. | 2020-06-09 |
SiC Power Semiconductor Device with Integrated Schottky Junction
App 20200161433 - Leendertz; Caspar ; et al. | 2020-05-21 |
SiC trench transistor device and methods of manufacturing thereof
Grant 10,586,845 - Aichinger , et al. | 2020-03-10 |
SiC device with buried doped region
Grant 10,580,878 - Joshi , et al. | 2020-03-03 |
SiC Device with Buried Doped Region
App 20200058760 - Joshi; Ravi Keshav ; et al. | 2020-02-20 |
Semiconductor Device with Diode Region
App 20200044076 - Siemieniec; Ralf ; et al. | 2020-02-06 |
SiC semiconductor device with offset in trench bottom
Grant 10,553,685 - Siemieniec , et al. Fe | 2020-02-04 |
Semiconductor Device Including Silicon Carbide Body And Transistor Cells
App 20200006544 - SIEMIENIEC; Ralf ; et al. | 2020-01-02 |
Semiconductor Device with Silicon Carbide Body and Method of Manufacturing
App 20190355819 - Siemieniec; Ralf ; et al. | 2019-11-21 |
Silicon Carbide Semiconductor Component
App 20190341447 - Siemieniec; Ralf ; et al. | 2019-11-07 |
Semiconductor Device and Method for Forming a Semiconductor Device
App 20190311966 - Konrath; Jens Peter ; et al. | 2019-10-10 |
Semiconductor devices with trench gate structures in a semiconductor body with hexagonal crystal lattice
Grant 10,361,192 - Rupp , et al. | 2019-07-23 |
Method of forming compound semiconductor body
Grant 10,332,876 - Siemieniec , et al. | 2019-06-25 |
Semiconductor Device Having a Source Electrode Contact Trench
App 20190157447 - Siemieniec; Ralf ; et al. | 2019-05-23 |
Forming a metal contact layer on silicon carbide and semiconductor device with metal contact structure
Grant 10,256,097 - Joshi , et al. | 2019-04-09 |
Silicon Carbide Semiconductor Device with Trench Gate Structure and Vertical PN Junction Between Body Region and Drift Structure
App 20190097042 - Meiser; Andreas ; et al. | 2019-03-28 |
Method of Forming Compound Semiconductor Body
App 20190081039 - Siemieniec; Ralf ; et al. | 2019-03-14 |
Method of manufacturing a silicon carbide semiconductor device by removing amorphized portions
Grant 10,217,636 - Aichinger , et al. Feb | 2019-02-26 |
Semiconductor device with diode region and trench gate structure
Grant 10,211,306 - Siemieniec , et al. Feb | 2019-02-19 |
Particle Irradiation Apparatus, Beam Modifier Device, And Semiconductor Device Including A Junction Termination Extension Zone
App 20190049850 - RUPP; Roland ; et al. | 2019-02-14 |
Semiconductor Device with Trench Gate Structure Including a Gate Electrode and a Contact Structure for a Diode Region
App 20180350968 - Aichinger; Thomas ; et al. | 2018-12-06 |
Semiconductor Device with Transistor Cells and a Drift Structure and Method of Manufacturing
App 20180331204 - Aichinger; Thomas ; et al. | 2018-11-15 |
Particle irradiation apparatus, beam modifier device, and semiconductor device including a junction termination extension zone
Grant 10,120,287 - Rupp , et al. November 6, 2 | 2018-11-06 |
Semiconductor Device and Transistor Cell Having a Diode Region
App 20180315845 - Siemieniec; Ralf ; et al. | 2018-11-01 |
SiC Semiconductor Device with Offset in Trench Bottom
App 20180308938 - Siemieniec; Ralf ; et al. | 2018-10-25 |
Semiconductor Devices with Trench Gate Structures in a Semiconductor Body with Hexagonal Crystal Lattice
App 20180294260 - Rupp; Roland ; et al. | 2018-10-11 |
Semiconductor device with trench gate structure including a gate electrode and a contact structure for a diode region
Grant 10,074,741 - Aichinger , et al. September 11, 2 | 2018-09-11 |
Vertical Transistor Device with a Variable Gate Dielectric Thickness
App 20180248000 - Esteve; Romain ; et al. | 2018-08-30 |
Self aligned silicon carbide contact formation using protective layer
Grant 10,049,879 - Joshi , et al. August 14, 2 | 2018-08-14 |
Semiconductor device and transistor cell having a diode region
Grant 10,038,087 - Siemieniec , et al. July 31, 2 | 2018-07-31 |
Method of Manufacturing a Silicon Carbide Semiconductor Device by Removing Amorphized Portions
App 20180204725 - Aichinger; Thomas ; et al. | 2018-07-19 |
Method of Producing a Semiconductor Device
App 20180197852 - Siemieniec; Ralf ; et al. | 2018-07-12 |
Forming a Metal Contact Layer on Silicon Carbide and Semiconductor Device with Metal Contact Structure
App 20180174840 - Joshi; Ravi Keshav ; et al. | 2018-06-21 |
Semiconductor devices with trench gate structures in a semiconductor body with hexagonal crystal lattice
Grant 9,997,515 - Rupp , et al. June 12, 2 | 2018-06-12 |
Semiconductor Device with Diode Region and Trench Gate Structure
App 20180158920 - Siemieniec; Ralf ; et al. | 2018-06-07 |
Semiconductor Device and Transistor Cell Having a Diode Region
App 20180122931 - Siemieniec; Ralf ; et al. | 2018-05-03 |
Silicon-carbide transistor device with a shielded gate
Grant 9,960,230 - Esteve , et al. May 1, 2 | 2018-05-01 |
Method of producing a semiconductor device
Grant 9,941,272 - Siemieniec , et al. April 10, 2 | 2018-04-10 |
Method of manufacturing a silicon carbide semiconductor device by removing amorphized portions
Grant 9,934,972 - Aichinger , et al. April 3, 2 | 2018-04-03 |
Self Aligned Silicon Carbide Contact Formation Using Protective Layer
App 20180076036 - Joshi; Ravi Keshav ; et al. | 2018-03-15 |
Carbon based contact structure for silicon carbide device technical field
Grant 9,917,170 - Joshi , et al. March 13, 2 | 2018-03-13 |
Semiconductor Device with a Source Trench Electrode
App 20180053841 - Siemieniec; Ralf ; et al. | 2018-02-22 |
Semiconductor device and transistor cell having a diode region
Grant 9,876,103 - Siemieniec , et al. January 23, 2 | 2018-01-23 |
Semiconductor device with a trench electrode
Grant 9,837,527 - Siemieniec , et al. December 5, 2 | 2017-12-05 |
Semiconductor Devices with Trench Gate Structures in a Semiconductor Body with Hexagonal Crystal Lattice
App 20170345818 - Rupp; Roland ; et al. | 2017-11-30 |
Wide-Bandgap Semiconductor Device with Trench Gate Structures
App 20170345905 - Siemieniec; Ralf ; et al. | 2017-11-30 |
Power semiconductor device including trench gate structures with longitudinal axes tilted to a main crystal direction
Grant 9,818,818 - Rupp , et al. November 14, 2 | 2017-11-14 |
Carbon Vacancy Defect Reduction Method for SiC
App 20170309484 - Draghici; Mihai ; et al. | 2017-10-26 |
Carbon Based Contact Structure for Silicon Carbide Device Technical Field
App 20170309720 - Joshi; Ravi ; et al. | 2017-10-26 |
Semiconductor devices with trench gate structures in a semiconductor body with hexagonal crystal lattice
Grant 9,741,712 - Rupp , et al. August 22, 2 | 2017-08-22 |
Self aligned silicon carbide contact formation using protective layer
Grant 9,666,482 - Joshi , et al. May 30, 2 | 2017-05-30 |
Method of manufacturing a vertical junction field effect transistor
Grant 9,666,696 - Esteve , et al. May 30, 2 | 2017-05-30 |
Silicon-Carbide Transistor Device with a Shielded Gate
App 20170117352 - Esteve; Romain ; et al. | 2017-04-27 |
Method of Manufacturing a Silicon Carbide Semiconductor Device by Removing Amorphized Portions
App 20170103894 - Aichinger; Thomas ; et al. | 2017-04-13 |
Particle Irradiation Apparatus, Beam Modifier Device, And Semiconductor Device Including A Junction Termination Extension Zone
App 20170059997 - RUPP; Roland ; et al. | 2017-03-02 |
Method of forming a silicon-carbide device with a shielded gate
Grant 9,577,073 - Esteve , et al. February 21, 2 | 2017-02-21 |
Semiconductor Device and Transistor Cell Having a Diode Region
App 20170033212 - Siemieniec; Ralf ; et al. | 2017-02-02 |
Semiconductor device having a lower diode region arranged below a trench
Grant 9,478,655 - Siemieniec , et al. October 25, 2 | 2016-10-25 |
Semiconductor Devices with Trench Gate Structures in a Semiconductor Body with Hexagonal Crystal Lattice
App 20160260709 - Rupp; Roland ; et al. | 2016-09-08 |
Power Semiconductor Device Including Trench Gate Structures with Longitudinal Axes Tilted to a Main Crystal Direction
App 20160260798 - Rupp; Roland ; et al. | 2016-09-08 |
Semiconductor Device with Trench Gate Structure Including a Gate Electrode and a Contact Structure for a Diode Region
App 20160260829 - Aichinger; Thomas ; et al. | 2016-09-08 |
Method of Producing a Semiconductor Device
App 20160190121 - Siemieniec; Ralf ; et al. | 2016-06-30 |
Method Of Forming A Silicon-carbide Device With A Shielded Gate
App 20160172468 - Esteve; Romain ; et al. | 2016-06-16 |
Semiconductor Device with a Trench Electrode
App 20160163852 - Siemieniec; Ralf ; et al. | 2016-06-09 |
Semiconductor device
Grant 9,293,558 - Siemieniec , et al. March 22, 2 | 2016-03-22 |
Method of Manufacturing a Vertical Junction Field Effect Transistor
App 20160064534 - Esteve; Romain ; et al. | 2016-03-03 |
Vertical JFET with body diode and device regions disposed in a single compound epitaxial layer
Grant 9,209,318 - Esteve , et al. December 8, 2 | 2015-12-08 |
Semiconductor Device Having a Lower Diode Region Arranged Below a Trench
App 20150340487 - Siemieniec; Ralf ; et al. | 2015-11-26 |
Semiconductor device, junction field effect transistor and vertical field effect transistor
Grant 9,029,974 - Esteve , et al. May 12, 2 | 2015-05-12 |
Semiconductor Device, Junction Field Effect Transistor And Vertical Field Effect Transistor
App 20150069411 - Esteve; Romain ; et al. | 2015-03-12 |
Vertical JFET with Integrated Body Diode
App 20140231883 - Esteve; Romain ; et al. | 2014-08-21 |
Semiconductor Device
App 20140145206 - Siemieniec; Ralf ; et al. | 2014-05-29 |
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