loadpatents
name:-0.0096309185028076
name:-0.0087790489196777
name:-0.0011670589447021
Eom; Tae-Min Patent Filings

Eom; Tae-Min

Patent Applications and Registrations

Patent applications and USPTO patent grants for Eom; Tae-Min.The latest application filed is for "metal oxide alloy layer, method of forming the metal oxide alloy layer, and methods of manufacturing a gate structure and a capacitor including the metal oxide alloy layer".

Company Profile
0.7.8
  • Eom; Tae-Min - Seoul KR
  • Eom; Tae-Min - Sungnam-si KR
  • Eom; Tae-Min - Sungnam KR
  • Eom; Tae-Min - Seongnam-si KR
  • Eom, Tae-Min - Sungnam-city KR
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Metal oxide alloy layer, method of forming the metal oxide alloy layer, and methods of manufacturing a gate structure and a capacitor including the metal oxide alloy layer
Grant 8,138,057 - Lee , et al. March 20, 2
2012-03-20
Metal Oxide Alloy Layer, Method Of Forming The Metal Oxide Alloy Layer, And Methods Of Manufacturing A Gate Structure And A Capacitor Including The Metal Oxide Alloy Layer
App 20080305591 - LEE; Jung-Ho ;   et al.
2008-12-11
Forming composite metal oxide layer with hafnium oxide and titanium oxide
Grant 7,427,573 - Lee , et al. September 23, 2
2008-09-23
Method and apparatus for inspecting a wafer surface
Grant 7,310,140 - Eom , et al. December 18, 2
2007-12-18
Method of inspecgin a leakage current characteristic of a dielectric layer
App 20070188185 - Eom; Tae-Min ;   et al.
2007-08-16
Method of inspecting a leakage current characteristic of a dielectric layer and apparatus for performing the method
Grant 7,186,280 - Eom , et al. March 6, 2
2007-03-06
Metal oxide alloy layer, method of forming the metal oxide alloy layer, and methods of manufacturing a gate structure and a capacitor including the metal oxide alloy layer
App 20060157694 - Lee; Jung-Ho ;   et al.
2006-07-20
Method of inspecting a leakage current characteristic of a dielectric layer and apparatus for performing the method
App 20060022698 - Eom; Tae-Min ;   et al.
2006-02-02
Method and apparatus for measuring contamination of a semiconductor substrate
Grant 6,927,077 - Eom , et al. August 9, 2
2005-08-09
Method and apparatus for detecting contaminants in ion-implanted wafer
Grant 6,869,215 - Yang , et al. March 22, 2
2005-03-22
Method and apparatus for inspecting a wafer surface
App 20040263836 - Eom, Tae-Min ;   et al.
2004-12-30
Method of monitoring contact hole of integrated circuit using corona charges
Grant 6,803,241 - Eom , et al. October 12, 2
2004-10-12
Method and apparatus for detecting contaminants in ion-implanted wafer
App 20040105486 - Yang, Yu-Sin ;   et al.
2004-06-03
Method and apparatus for measuring contamination of a semiconductor substrate
App 20040100298 - Eom, Tae-Min ;   et al.
2004-05-27
Method of monitoring contact hole of integrated circuit using corona charges
App 20030129776 - Eom, Tae-min ;   et al.
2003-07-10

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