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Patent applications and USPTO patent grants for Engelmann; Hans-Juergen.The latest application filed is for "transistor having a strained channel region caused by hydrogen-induced lattice deformation".
Patent | Date |
---|---|
Technique for forming embedded metal lines having increased resistance against stress-induced material transport Grant 8,039,395 - Meyer , et al. October 18, 2 | 2011-10-18 |
Transistor Having A Strained Channel Region Caused By Hydrogen-induced Lattice Deformation App 20100025742 - Beyer; Sven ;   et al. | 2010-02-04 |
Metal line having an increased resistance to electromigration along an interface of a dielectric barrier layer by implanting material into the metal line Grant 7,183,629 - Engelmann , et al. February 27, 2 | 2007-02-27 |
Technique for forming embedded metal lines having increased resistance against stress-induced material transport App 20050161817 - Meyer, Moritz-Andreas ;   et al. | 2005-07-28 |
Metal line having an increased resistance to electromigration along an interface of a dielectric barrier layer by implanting material into the metal line App 20050046031 - Engelmann, Hans-Juergen ;   et al. | 2005-03-03 |
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