ENDA; TAKAYUKI

Patent Applications and Registrations

Patent applications and USPTO patent grants for ENDA; TAKAYUKI.The latest application filed is for "ic with trenches filled with essentially crack-free dielectric".

Company Profile

0.15.15

ENDA; TAKAYUKI - FUKUSHIMA JP
ENDA; Takayuki - Fukushima-ken JP
Enda; Takayuki - Fukuchima-ken N/A JP
Enda; Takayuki - Aizuwakamatsu JP
Enda; Takayuki - Aizuwakamatsu-Shi JP
Enda; Takayuki - US
Enda; Takayuki - Kawasaki JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Ic With Trenches Filled With Essentially Crack-free Dielectric App 20180358257 - ENDA; TAKAYUKI ; et al.	2018-12-13
Method Of Forming A Damascene Interconnect On A Barrier Layer App 20170154851 - ENDA; Takayuki	2017-06-01
Method of forming a damascene interconnect on a barrier layer Grant 9,570,396 - Enda February 14, 2	2017-02-14
Semiconductor device with stop layers and fabrication method using ceria slurry Grant 9,396,959 - Enda , et al. July 19, 2	2016-07-19
Semiconductor device with void detection monitor Grant 8,344,510 - Enda January 1, 2	2013-01-01
Semiconductor Device With Stop Layers And Fabrication Method Using Ceria Slurry App 20120248597 - ENDA; Takayuki ; et al.	2012-10-04
Semiconductor device with stop layers and fabrication method using ceria slurry Grant 8,222,147 - Enda , et al. July 17, 2	2012-07-17
Semiconductor Device And Method Of Fabricating The Same App 20110306201 - ENDA; Takayuki	2011-12-15
Semiconductor device Grant 8,008,778 - Enda August 30, 2	2011-08-30
Method For Detecting A Void App 20110156036 - ENDA; Takayuki	2011-06-30
Plasma treated metal silicide layer formation Grant 7,902,056 - Enda , et al. March 8, 2	2011-03-08
Method for detecting a void Grant 7,901,954 - Enda March 8, 2	2011-03-08
Method of fabricating semiconductor memory device and semiconductor memory device driver Grant 7,679,194 - Hashimoto , et al. March 16, 2	2010-03-16
Semiconductor Device And Manufacturing Method Therefor App 20090250697 - ENDA; Takayuki	2009-10-08
Plasma Treated Metal Silicide Layer Formation App 20090053867 - ENDA; Takayuki ; et al.	2009-02-26
Semiconductor memory device and method of fabricating the same Grant 7,453,116 - Takagi , et al. November 18, 2	2008-11-18
Method of fabricating semiconductor memory device and semiconductor memory device driver App 20070187833 - Hashimoto; Tatsuya ; et al.	2007-08-16
Semiconductor device and programming method App 20070015366 - Enda; Takayuki ; et al.	2007-01-18
Semiconductor device and method of fabricating the same App 20070001311 - Enda; Takayuki	2007-01-04
Semiconductor device and method of fabricating the same App 20060214218 - Shishido; Kiyokazu ; et al.	2006-09-28
Semiconductor memory device and method of fabricating the same App 20060145242 - Takagi; Hideo ; et al.	2006-07-06
Semiconductor memory device and method of fabricating the same Grant 7,037,780 - Takagi , et al. May 2, 2	2006-05-02
Method of fabricating semiconductor memory device and semiconductor memory device driver App 20050006672 - Hashimoto, Tatsuya ; et al.	2005-01-13
Method of fabricating semiconductor memory device and semiconductor memory device driver Grant 6,794,248 - Hashimoto , et al. September 21, 2	2004-09-21
Semiconductor memory device and method of fabricating the same App 20040110390 - Takagi, Hideo ; et al.	2004-06-10
Method of fabricating semiconductor memory device and semiconductor memory device driver App 20030162354 - Hashimoto, Tatsuya ; et al.	2003-08-28
Reduction of reflection by amorphous carbon Grant 6,007,732 - Hashimoto , et al. December 28, 1	1999-12-28
Reduction of reflection by amorphous carbon Grant 5,656,128 - Hashimoto , et al. August 12, 1	1997-08-12

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