Eklund; Klas-Hakan

Patent Applications and Registrations

Patent applications and USPTO patent grants for Eklund; Klas-Hakan.The latest application filed is for "semiconductor device, comprising an insulated gate field effect transistor connected in series with a field effect transistor".

Company Profile

2.7.8

Eklund; Klas-Hakan - Uppsala SE
Eklund; Klas-Hakan - Sollentuna N/A SE
Eklund; Klas-Hakan - Manhemsvagen SE

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Semiconductor device, comprising an insulated gate field effect transistor connected in series with a field effect transistor Grant 11,031,480 - Eklund , et al. June 8, 2	2021-06-08
Semiconductor Device, Comprising An Insulated Gate Field Effect Transistor Connected In Series With A Field Effect Transistor App 20210083066 - EKLUND; Klas-Hakan ; et al.	2021-03-18
A Semiconductor Device Comprising An Insulated Gate Field Transistor Connected On Series With A High Voltage Field Effect Transi App 20200105742 - EKLUND; Klas-Hakan ; et al.	2020-04-02
Semiconductor Device, Comprising An Insulated Gate Field Effect Transistor Connected In Series With A Field Effect Transistor App 20190288111 - EKLUND; Klas-Hakan ; et al.	2019-09-19
Integrated circuit sensor device for charge detection hybridizing a lateral metal oxide semiconductor field effect transistor (MOSFET) and a vertical bipolar junction transistor (BJT) Grant 10,209,215 - Eklund , et al. Feb	2019-02-19
Insulated gate bipolar transistor amplifier circuit Grant 9,608,097 - Eklund March 28, 2	2017-03-28
An Integrated Sensor Device For Charge Detection App 20160153932 - EKLUND; Klas-Hakan ; et al.	2016-06-02
Insulated Gate Bipolar Transistor Amplifier Circuit App 20160093723 - EKLUND; Klas-Hakan	2016-03-31
Semiconductor element Grant 8,969,925 - Eklund , et al. March 3, 2	2015-03-03
Semiconductor Element App 20140001517 - Eklund; Klas-Hakan ; et al.	2014-01-02
Semiconductor device wherein a first insulated gate field effect transistor is connected in series with a second field effect transistor Grant 8,264,015 - Eklund September 11, 2	2012-09-11
Lateral semiconductor device comprising two layers of mutually opposite conductivity-type materials between source and drain Grant 8,053,835 - Eklund November 8, 2	2011-11-08
Semiconductor Device Wherein A First Insulated Gate Field Effect Transistor Is Connected In Series With A Second Field Effect Transistor App 20100327330 - Eklund; Klas-Hakan	2010-12-30

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