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Patent applications and USPTO patent grants for EGASHIRA; Katsumi.The latest application filed is for "capacitor formed in semiconductor".
Patent | Date |
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Capacitor Formed In Semiconductor App 20170069568 - INAZUMI; Ken ;   et al. | 2017-03-09 |
Method of manufacturing a semiconductor light-emitting element Grant 7,037,738 - Sugiyama , et al. May 2, 2 | 2006-05-02 |
Semiconductor light-emitting element and method of manufacturing the same App 20050145864 - Sugiyama, Hitoshi ;   et al. | 2005-07-07 |
Semiconductor light-emitting element and method of manufacturing the same App 20030178626 - Sugiyama, Hitoshi ;   et al. | 2003-09-25 |
SOI semiconductor wafer having different thickness active layers and semiconductor device formed therein Grant 6,593,627 - Egashira July 15, 2 | 2003-07-15 |
SOI semiconductor wafer having different thickness active layers and semiconductor device formed therein App 20020142507 - Egashira, Katsumi | 2002-10-03 |
Hetero-bipolar transistor and method of manufacture thereof App 20020038874 - Egashira, Katsumi | 2002-04-04 |
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