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name:-0.006965160369873
name:-0.007310152053833
name:-0.00038790702819824
Efland; Taylor Rice Patent Filings

Efland; Taylor Rice

Patent Applications and Registrations

Patent applications and USPTO patent grants for Efland; Taylor Rice.The latest application filed is for "lateral drain-extended mosfet having channel along sidewall of drain extension dielectric".

Company Profile
0.7.5
  • Efland; Taylor Rice - Richardson TX
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
MOS transistor with gate trench adjacent to drain extension field insulation
Grant 8,253,193 - Denison , et al. August 28, 2
2012-08-28
Lateral drain-extended MOSFET having channel along sidewall of drain extension dielectric
Grant 8,173,510 - Denison , et al. May 8, 2
2012-05-08
MOS transistor with gate trench adjacent to drain extension field insulation
Grant 8,124,482 - Denison , et al. February 28, 2
2012-02-28
Lateral Drain-extended Mosfet Having Channel Along Sidewall Of Drain Extension Dielectric
App 20110151634 - Denison; Marie ;   et al.
2011-06-23
Mos Transistor With Gate Trench Adjacent To Drain Extension Field Insulation
App 20110111569 - Denison; Marie ;   et al.
2011-05-12
Mos Transistor With Gate Trench Adjacent To Drain Extension Field Insulation
App 20110108914 - Denison; Marie ;   et al.
2011-05-12
MOS transistor with gate trench adjacent to drain extension field insulation
Grant 7,893,499 - Denison , et al. February 22, 2
2011-02-22
Lateral drain-extended MOSFET having channel along sidewall of drain extension dielectric
Grant 7,888,732 - Denison , et al. February 15, 2
2011-02-15
MOS Transistor with Gate Trench Adjacent to Drain Extension Field Insulation
App 20100252882 - Denison; Marie ;   et al.
2010-10-07
Lateral Drain-extended Mosfet Having Channel Along Sidewall Of Drain Extension Dielectric
App 20090256212 - Denison; Marie ;   et al.
2009-10-15
Integrated circuit with bonding layer over active circuitry
Grant 6,144,100 - Shen , et al. November 7, 2
2000-11-07
Integrated SCR-LDMOS power device
Grant 6,137,140 - Efland , et al. October 24, 2
2000-10-24

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