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Patent applications and USPTO patent grants for Ebrish; Mona.The latest application filed is for "nanosheet substrate to source/drain isolation".
Patent | Date |
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Two step fin etch and reveal for VTFETs and high breakdown LDVTFETs Grant 10,811,528 - Ebrish , et al. October 20, 2 | 2020-10-20 |
High temperature ultra-fast annealed soft mask for semiconductor devices Grant 10,804,106 - Ebrish , et al. October 13, 2 | 2020-10-13 |
Nanosheet substrate to source/drain isolation Grant 10,734,523 - Lie , et al. | 2020-08-04 |
Nanosheet Substrate To Source/drain Isolation App 20200052107 - Lie; Fee Li ;   et al. | 2020-02-13 |
Two Step Fin Etch and Reveal for VTFETs and High Breakdown LDVTFETs App 20190296142 - Ebrish; Mona ;   et al. | 2019-09-26 |
High Temperature Ultra-fast Annealed Soft Mask For Semiconductor Devices App 20190259616 - Ebrish; Mona ;   et al. | 2019-08-22 |
Vertical transport FET with two or more gate lengths Grant 10,361,127 - Karve , et al. | 2019-07-23 |
Vertical Transport Fet With Two Or More Gate Lengths App 20190206738 - Karve; Gauri ;   et al. | 2019-07-04 |
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