Ebel; John L.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Ebel; John L..The latest application filed is for "method of forming a low cost digital variable capacitor".

Company Profile

0.14.1

Ebel; John L. - Beavercreek OH
Ebel; John L. - Centerville OH

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Latching zip-mode actuated mono wafer MEMS switch method Grant 7,977,137 - Ebel , et al. July 12, 2	2011-07-12
Latching zip-mode actuated mono wafer MEMS switch Grant 7,960,804 - Ebel , et al. June 14, 2	2011-06-14
Method of forming a low cost digital variable capacitor Grant 7,617,577 - Ebel , et al. November 17, 2	2009-11-17
MEMS RF switch integrated process Grant 7,381,583 - Ebel , et al. June 3, 2	2008-06-03
Method of forming a low cost digital variable capacitor App 20070044289 - Ebel; John L. ; et al.	2007-03-01
MEMS RF switch integrated process Grant 7,145,213 - Ebel , et al. December 5, 2	2006-12-05
Stiffened backside fabrication for microwave radio frequency wafers Grant 6,884,717 - Desalvo , et al. April 26, 2	2005-04-26
Measured via-hole etching Grant 6,653,214 - Quach , et al. November 25, 2	2003-11-25
Complementary heterostructure integrated single metal transistor apparatus Grant 6,222,210 - Cerny , et al. April 24, 2	2001-04-24
Complementary heterostructure integrated single metal transistor fabrication method Grant 6,198,116 - Cerny , et al. March 6, 2	2001-03-06
Single layer integrated metal process for enhancement mode field-effect transistor Grant 6,020,226 - Cerny , et al. February 1, 2	2000-02-01
Digital wet etching of semiconductor materials Grant 6,004,881 - Bozada , et al. December 21, 1	1999-12-21
Single layer integrated metal process for high electron mobility transistor (HEMT) and pseudomorphic high electron mobility transistor (PHEMT) Grant 5,976,920 - Nakano , et al. November 2, 1	1999-11-02
Single layer integrated metal process for metal semiconductor field effect transistor (MESFET) Grant 5,869,364 - Nakano , et al. February 9, 1	1999-02-09
High electron mobility transistor (HEMT) and pseudomorphic high electron mobility transistor (PHEMT) devices with single layer integrated metal Grant 5,698,870 - Nakano , et al. December 16, 1	1997-12-16

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