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name:-0.058605194091797
name:-0.037467956542969
name:-0.044453859329224
Eason; Kwame Patent Filings

Eason; Kwame

Patent Applications and Registrations

Patent applications and USPTO patent grants for Eason; Kwame.The latest application filed is for "ultrahigh selective polysilicon etch with high throughput".

Company Profile
6.4.6
  • Eason; Kwame - East Palo Alto CA
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Plasma apparatus for high aspect ratio selective lateral etch using cyclic passivation and etching
Grant 11,011,388 - Eason , et al. May 18, 2
2021-05-18
Ultrahigh Selective Polysilicon Etch With High Throughput
App 20190221654 - Yang; Dengliang ;   et al.
2019-07-18
High Aspect Ratio Selective Lateral Etch Using Cyclic Passivation And Etching
App 20190206697 - Eason; Kwame ;   et al.
2019-07-04
Ultrahigh selective polysilicon etch with high throughput
Grant 10,283,615 - Yang , et al.
2019-05-07
High aspect ratio selective lateral etch using cyclic passivation and etching
Grant 10,276,398 - Eason , et al.
2019-04-30
High Aspect Ratio Selective Lateral Etch Using Cyclic Passivation And Etching
App 20190043732 - Eason; Kwame ;   et al.
2019-02-07
System and method for increasing electron density levels in a plasma of a substrate processing system
Grant 10,147,588 - Eason , et al. De
2018-12-04
Ultrahigh Selective Nitride Etch To Form Finfet Devices
App 20180269070 - Eason; Kwame ;   et al.
2018-09-20
System And Method For Increasing Electron Density Levels In A Plasma Of A Substrate Processing System
App 20170236694 - Eason; Kwame ;   et al.
2017-08-17
Ultrahigh Selective Polysilicon Etch With High Throughput
App 20160064519 - Yang; Dengliang ;   et al.
2016-03-03

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