Dwilinski; Robert

Patent Applications and Registrations

Patent applications and USPTO patent grants for Dwilinski; Robert.The latest application filed is for "light emitting device structure having nitride bulk single crystal layer".

Company Profile

0.21.23

Dwilinski; Robert - Warsaw N/A PL
Dwilinski; Robert - Warszawa PL

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
High electron mobility transistor (HEMT) made of layers of Group XIII element nitrides and manufacturing method thereof Grant 8,754,449 - Dwilinski , et al. June 17, 2	2014-06-17
Bulk mono-crystalline gallium-containing nitride and its application Grant 8,398,767 - Dwilinski , et al. March 19, 2	2013-03-19
Substrate for epitaxy and method of preparing the same Grant 8,110,848 - Dwilinski , et al. February 7, 2	2012-02-07
Method of forming light-emitting device using nitride bulk single crystal layer Grant 7,935,550 - Dwilinski , et al. May 3, 2	2011-05-03
Method of obtaining bulk single crystals by seeded growth Grant 7,905,957 - Dwilinski , et al. March 15, 2	2011-03-15
Method of preparing light emitting device Grant 7,871,843 - Dwilinski , et al. January 18, 2	2011-01-18
Process for obtaining bulk mono-crystalline gallium-containing nitride Grant 7,811,380 - Dwilinski , et al. October 12, 2	2010-10-12
Light emitting element structure using nitride bulk single crystal layer Grant 7,750,355 - Dwilinski , et al. July 6, 2	2010-07-06
Light Emitting Device Structure Having Nitride Bulk Single Crystal Layer App 20090315012 - Dwilinski; Robert ; et al.	2009-12-24
Phosphor single crystal substrate and method for preparing the same, and nitride semiconductor component using the same Grant 7,589,358 - Dwilinski , et al. September 15, 2	2009-09-15
Substrate for epitaxy and method of preparing the same App 20080311393 - Dwilinski; Robert ; et al.	2008-12-18
Bulk Mono-Crystalline Gallium-Containing Nitride and Its Application App 20080303032 - Dwilinski; Robert ; et al.	2008-12-11
Method of forming gallium-containing nitride bulk single crystal on heterogeneous substrate Grant 7,422,633 - Dwilinski , et al. September 9, 2	2008-09-09
Template type substrate and a method of preparing the same Grant 7,410,539 - Dwilinski , et al. August 12, 2	2008-08-12
Nitride Single Crystal Seeded Growth in Supercritical Ammonia with Alkali Metal Ion App 20080156254 - Dwilinski; Robert ; et al.	2008-07-03
Substrate for epitaxy and method of preparing the same Grant 7,387,677 - Dwilinski , et al. June 17, 2	2008-06-17
Method and equipment for manufacturing aluminum nitride bulk single crystal Grant 7,374,615 - Dwilinski , et al. May 20, 2	2008-05-20
Light-Emitting Device Structure Using Nitride Bulk Single Crystal Layer App 20080108162 - DWILINSKI; Robert ; et al.	2008-05-08
Process for obtaining of bulk monocrystalline gallium-containing nitride Grant 7,364,619 - Dwilinski , et al. April 29, 2	2008-04-29
High Electron Mobility Transistor (Hemt) Made of Layers of Group XIII Element Nitrides and Manufacturing Method Thereof App 20080067523 - Dwilinski; Robert ; et al.	2008-03-20
Nitride semiconductor laser device and a method for improving its performance App 20080050855 - DWILINSKI; Robert ; et al.	2008-02-28
Apparatus for obtaining a bulk single crystal using supercritical ammonia Grant 7,335,262 - Dwilinski , et al. February 26, 2	2008-02-26
Process for obtaining bulk mono-crystalline gallium-containing nitride Grant 7,314,517 - Dwilinski , et al. January 1, 2	2008-01-01
Nitride semiconductor laser device and a method for improving its performance Grant 7,315,559 - Dwilinski , et al. January 1, 2	2008-01-01
Bulk nitride mono-crystal including substrate for epitaxy App 20070040240 - Dwilinski; Robert ; et al.	2007-02-22
Bulk single crystal production facility employing supercritical ammonia App 20060191472 - Dwilinski; Robert ; et al.	2006-08-31
Method of manufacturing bulk single crystal of gallium nitride Grant 7,081,162 - Dwilinski , et al. July 25, 2	2006-07-25
Light emitting device structure having nitride bulk single crystal layer App 20060138431 - Dwilinski; Robert ; et al.	2006-06-29
Process for obtaining bulk-crystalline gallium-containing nitride App 20060120931 - Dwilinski; Robert ; et al.	2006-06-08
Nitride semiconductor laser device and manufacturing method thereof Grant 7,057,211 - Dwilinski , et al. June 6, 2	2006-06-06
Phosphor single crystal substrate and method for preparing the same, and nitride semiconductor component using the same App 20060054076 - Dwilinski; Robert ; et al.	2006-03-16
Template type substrate and a method of preparing the same App 20060057749 - Dwilinski; Robert ; et al.	2006-03-16
Substrate for epitaxy and method of preparing the same App 20060054075 - Dwilinski; Robert ; et al.	2006-03-16
Process for obtaining bulk mono-crystalline gallium-containing nitride App 20060037530 - Dwilinski; Robert ; et al.	2006-02-23
Process for obtaining of bulk monocrystalline gallium-containing nitride App 20060032428 - Dwilinski; Robert ; et al.	2006-02-16
Nitride semiconductor laser device and a method for improving its performance App 20050249255 - Dwilinski, Robert ; et al.	2005-11-10
Method and equipment for manufacturing aluminum nitride bulk single crystal App 20050087124 - Dwilinski, Robert ; et al.	2005-04-28
Substrate for epitaxy App 20040261692 - Dwilinski, Robert ; et al.	2004-12-30
Method for forming gallium-containing nitride bulk single crystal on heterogenous substrate App 20040255840 - Dwilinski, Robert ; et al.	2004-12-23
Light emitting element structure using nitride bulk single crystal layer App 20040251471 - Dwilinski, Robert ; et al.	2004-12-16
Method of manufacturing bulk single crystal of gallium nitride App 20040244680 - Dwilinski, Robert ; et al.	2004-12-09
Nitride semiconductor laser device and manufacturing method therefor App 20040238810 - Dwilinski, Robert ; et al.	2004-12-02

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