loadpatents
name:-0.0082099437713623
name:-0.0065710544586182
name:-0.00047111511230469
Dupuis; Mark D. Patent Filings

Dupuis; Mark D.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Dupuis; Mark D..The latest application filed is for "bipolar transistor structure and method including emitter-base interface impurity".

Company Profile
0.6.5
  • Dupuis; Mark D. - South Burlington VT US
  • Dupuis; Mark D. - Essex Junction VT
  • Dupuis; Mark D. - South Burilington VT
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Bipolar transistor structure and method including emitter-base interface impurity
Grant 8,482,101 - Benoit , et al. July 9, 2
2013-07-09
Bipolar Transistor Structure And Method Including Emitter-base Interface Impurity
App 20100320571 - Benoit; John J. ;   et al.
2010-12-23
Yield improvement in silicon-germanium epitaxial growth
Grant 7,413,967 - Dupuis , et al. August 19, 2
2008-08-19
Yield Improvement In Silicon-germanium Epitaxial Growth
App 20060289959 - Dupuis; Mark D. ;   et al.
2006-12-28
Yield improvement in silicon-germanium epitaxial growth
Grant 7,118,995 - Dupuis , et al. October 10, 2
2006-10-10
Yield Improvement In Silicon-germanium Epitaxial Growth
App 20050260826 - Dupuis, Mark D. ;   et al.
2005-11-24
STI pull-down to control SiGe facet growth
Grant 6,936,509 - Coolbaugh , et al. August 30, 2
2005-08-30
Sti pull-down to control SiGe facet growth
App 20040063273 - Coolbaugh, Douglas Duane ;   et al.
2004-04-01
Sti pull-down to control SiGe facet growth
Grant 6,674,102 - Coolbaugh , et al. January 6, 2
2004-01-06
Sti pull-down to control SiGe facet growth
App 20020096693 - Coolbaugh, Douglas Duane ;   et al.
2002-07-25

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