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Patent applications and USPTO patent grants for Dupuis; Mark D..The latest application filed is for "bipolar transistor structure and method including emitter-base interface impurity".
Patent | Date |
---|---|
Bipolar transistor structure and method including emitter-base interface impurity Grant 8,482,101 - Benoit , et al. July 9, 2 | 2013-07-09 |
Bipolar Transistor Structure And Method Including Emitter-base Interface Impurity App 20100320571 - Benoit; John J. ;   et al. | 2010-12-23 |
Yield improvement in silicon-germanium epitaxial growth Grant 7,413,967 - Dupuis , et al. August 19, 2 | 2008-08-19 |
Yield Improvement In Silicon-germanium Epitaxial Growth App 20060289959 - Dupuis; Mark D. ;   et al. | 2006-12-28 |
Yield improvement in silicon-germanium epitaxial growth Grant 7,118,995 - Dupuis , et al. October 10, 2 | 2006-10-10 |
Yield Improvement In Silicon-germanium Epitaxial Growth App 20050260826 - Dupuis, Mark D. ;   et al. | 2005-11-24 |
STI pull-down to control SiGe facet growth Grant 6,936,509 - Coolbaugh , et al. August 30, 2 | 2005-08-30 |
Sti pull-down to control SiGe facet growth App 20040063273 - Coolbaugh, Douglas Duane ;   et al. | 2004-04-01 |
Sti pull-down to control SiGe facet growth Grant 6,674,102 - Coolbaugh , et al. January 6, 2 | 2004-01-06 |
Sti pull-down to control SiGe facet growth App 20020096693 - Coolbaugh, Douglas Duane ;   et al. | 2002-07-25 |
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