Dunga; Mohan

Patent Applications and Registrations

Patent applications and USPTO patent grants for Dunga; Mohan.The latest application filed is for "programming to minimize cross-temperature threshold voltage widening".

Company Profile

27.41.32

Dunga; Mohan - Santa Clara CA
Dunga; Mohan - San Jose CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Non-volatile memory with capacitors using metal under signal line or above a device capacitor Grant 11,444,016 - Lin , et al. September 13, 2	2022-09-13
Non-volatile memory with multiple wells for word line switch transistors Grant 11,404,123 - Shao , et al. August 2, 2	2022-08-02
Three-dimensional memory device containing multiple size drain contact via structures and method of making same Grant 11,251,191 - Weng , et al. February 15, 2	2022-02-15
Temperature based programming in memory Grant 10,984,876 - Dak , et al. April 20, 2	2021-04-20
Programming to minimize cross-temperature threshold voltage widening Grant 10,978,145 - Ray , et al. April 13, 2	2021-04-13
Wordline smart tracking verify Grant 10,971,240 - Dunga , et al. April 6, 2	2021-04-06
Programming To Minimize Cross-temperature Threshold Voltage Widening App 20210050054 - Ray; Biswajit ; et al.	2021-02-18
Systems and methods for high-performance write operations Grant 10,878,926 - Shukla , et al. December 29, 2	2020-12-29
Temperature Based Programming In Memory App 20200402594 - Dak; Piyush ; et al.	2020-12-24
Non-volatile memory with capacitors using metal under signal line or above a device capacitor Grant 10,847,452 - Lin , et al. November 24, 2	2020-11-24
Non-volatile memory with pool capacitor Grant 10,825,827 - Dunga , et al. November 3, 2	2020-11-03
Non-volatile memory with pool capacitor Grant 10,818,685 - Dunga , et al. October 27, 2	2020-10-27
System handling for first read read disturb Grant 10,790,031 - Sagdeo , et al. September 29, 2	2020-09-29
Non-volatile memory with capacitors using metal under pads Grant 10,789,992 - Lin , et al. September 29, 2	2020-09-29
Non-volatile Memory With Capacitors Using Metal Under Signal Line Or Above A Device Capacitor App 20200294910 - Lin; Luisa ; et al.	2020-09-17
Non-volatile Memory With Capacitors Using Metal Under Signal Line Or Above A Device Capacitor App 20200294909 - Lin; Luisa ; et al.	2020-09-17
Recovering data from a faulty memory block in a memory system Grant 10,755,798 - Yang , et al. A	2020-08-25
System and method for programming non-volatile memory during burst sequential write Grant 10,714,169 - Reusswig , et al.	2020-07-14
Three-dimensional Memory Device Containing Multiple Size Drain Contact Via Structures And Method Of Making Same App 20200203365 - WENG; Lishan ; et al.	2020-06-25
Recovering Data From A Faulty Memory Block In A Memory System App 20200194094 - Yang; Niles ; et al.	2020-06-18
Concurrent multi-state program verify for non-volatile memory Grant 10,643,695 - Nguyen , et al.	2020-05-05
System and method for in-situ programming and read operation adjustments in a non-volatile memory Grant 10,559,370 - Yang , et al. Feb	2020-02-11
Systems And Methods For High-performance Write Operations App 20200035313 - Shukla; Pitamber ; et al.	2020-01-30
System and method for string-based erase verify to create partial good blocks Grant 10,535,411 - Dunga , et al. Ja	2020-01-14
Non-volatile Memory With Pool Capacitor App 20200013794 - Dunga; Mohan ; et al.	2020-01-09
Non-volatile Memory With Pool Capacitor App 20200013795 - Dunga; Mohan ; et al.	2020-01-09
Non-volatile Memory With Capacitors Using Metal Under Signal Line Or Above A Device Capacitor App 20200013714 - Lin; Luisa ; et al.	2020-01-09
Non-volatile Memory With Capacitors Using Metal Under Pads App 20200013434 - Lin; Luisa ; et al.	2020-01-09
Systems and methods for high-performance write operations Grant 10,460,816 - Shukla , et al. Oc	2019-10-29
System And Method For In-situ Programming And Read Operation Adjustments In A Non-volatile Memory App 20190295669 - Yang; Xiang ; et al.	2019-09-26
Systems And Methods For High-performance Write Operations App 20190180831 - Shukla; Pitamber ; et al.	2019-06-13
Metal contact via structure surrounded by an air gap and method of making thereof Grant 10,319,680 - Sel , et al.	2019-06-11
Erase speed based word line control Grant 10,304,551 - Ray , et al.	2019-05-28
System And Method For String-based Erase Verify To Create Partial Good Blocks App 20180342304 - Dunga; Mohan ; et al.	2018-11-29
Multiple liner interconnects for three dimensional memory devices and method of making thereof Grant 10,115,459 - Yamada , et al. October 30, 2	2018-10-30
Erase for partially programmed blocks in non-volatile memory Grant 10,074,440 - Ray , et al. September 11, 2	2018-09-11
Cell current based bit line voltage Grant 10,008,273 - Ray , et al. June 26, 2	2018-06-26
System and method for programming a memory device with multiple writes without an intervening erase Grant 9,972,396 - Naik , et al. May 15, 2	2018-05-15
Erase For Partially Programmed Blocks In Non-Volatile Memory App 20180122489 - Ray; Biswajit ; et al.	2018-05-03
Multi-tier three-dimensional memory devices including vertically shared source lines and method of making thereof Grant 9,935,050 - Dunga , et al. April 3, 2	2018-04-03
Erase Speed Based Word Line Control App 20170372789 - Ray; Biswajit ; et al.	2017-12-28
Cell Current Based Bit Line Voltage App 20170358365 - Ray; Biswajit ; et al.	2017-12-14
Multi-tier Three-dimensional Memory Devices Including Vertically Shared Source Lines And Method Of Making Thereof App 20170294377 - DUNGA; Mohan ; et al.	2017-10-12
System solution for first read issue using time dependent read voltages Grant 9,711,231 - Yip , et al. July 18, 2	2017-07-18
Apparatus and method for preconditioning currents to reduce errors in sensing for non-volatile memory Grant 9,704,588 - Ray , et al. July 11, 2	2017-07-11
Smart verify for programming non-volatile memory Grant 9,564,226 - Dunga , et al. February 7, 2	2017-02-07
Word line dependent temperature compensation scheme during sensing to counteract cross-temperature effect Grant 9,543,028 - Ray , et al. January 10, 2	2017-01-10
Non-volatile storage systems and methods Grant 9,449,701 - Hsiung , et al. September 20, 2	2016-09-20
Controlling dummy word line bias during erase in non-volatile memory Grant 9,443,597 - Dutta , et al. September 13, 2	2016-09-13
Method and apparatus for program and erase of select gate transistors Grant 9,396,808 - Dutta , et al. July 19, 2	2016-07-19
Word Line Dependent Temperature Compensation Scheme During Sensing To Counteract Cross-temperature Effect App 20160086675 - Ray; Biswajit ; et al.	2016-03-24
Compensation for temperature dependence of bit line resistance Grant 9,202,579 - Hsiung , et al. December 1, 2	2015-12-01
Single-level cell endurance improvement with pre-defined blocks Grant 9,159,406 - Higashitani , et al. October 13, 2	2015-10-13
Controlling Dummy Word Line Bias During Erase In Non-Volatile Memory App 20150200014 - Dutta; Deepanshu ; et al.	2015-07-16
Pre-charge during programming for 3D memory using gate-induced drain leakage Grant 8,988,939 - Dunga , et al. March 24, 2	2015-03-24
Pre-charge during programming for 3D memory using gate-induced drain leakage Grant 8,988,937 - Dunga , et al. March 24, 2	2015-03-24
Method and apparatus for program and erase of select gate transistors Grant 8,982,629 - Dutta , et al. March 17, 2	2015-03-17
Method And Apparatus For Program And Erase Of Select Gate Transistors App 20140369129 - Dutta; Deepanshu ; et al.	2014-12-18
Method of forming PN floating gate non-volatile storage elements and transistor having N+ gate Grant 8,877,627 - Dunga , et al. November 4, 2	2014-11-04
Method and apparatus for program and erase of select gate transistors Grant 8,861,282 - Dutta , et al. October 14, 2	2014-10-14
Compensation For Temperature Dependence Of Bit Line Resistance App 20140269070 - Hsiung; Chia-Lin ; et al.	2014-09-18
Method And Apparatus For Program And Erase Of Select Gate Transistors App 20140254277 - Dutta; Deepanshu ; et al.	2014-09-11
Pre-Charge During Programming For 3D Memory Using Gate-Induced Drain Leakage App 20140247670 - Dunga; Mohan ; et al.	2014-09-04
Method And Apparatus For Program And Erase Of Select Gate Transistors App 20140198575 - Dutta; Deepanshu ; et al.	2014-07-17
Single-level Cell Endurance Improvement With Pre-defined Blocks App 20140126286 - Higashitani; Masaaki ; et al.	2014-05-08
Pre-Charge During Programming For 3D Memory Using Gate-Induced Drain Leakage App 20140112075 - Dunga; Mohan ; et al.	2014-04-24
Method Of Forming Pn Floating Gate Non-volatile Storage Elements And Transistor Having N+ Gate App 20140106525 - Dunga; Mohan ; et al.	2014-04-17
Controlling Dummy Word Line Bias During Erase In Non-Volatile Memory App 20130314995 - Dutta; Deepanshu ; et al.	2013-11-28
P-/Metal floating gate non-volatile storage element Grant 8,503,229 - Lee , et al. August 6, 2	2013-08-06
P-/metal Floating Gate Non-volatile Storage Element App 20120243337 - Lee; Sanghyun ; et al.	2012-09-27
Pn Floating Gate Non-volatile Storage Element App 20120228691 - Dunga; Mohan ; et al.	2012-09-13

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