Dun; Haiping
Patent Applications and Registrations
Patent applications and USPTO patent grants for Dun; Haiping.The latest application filed is for "double trench mosfet with trench gate".
- Dun; Haiping - Fremont CA
| Patent | Date |
|---|---|
| Deep trench surrounded MOSFET with planar MOS gate Grant 11,456,389 - Dun , et al. September 27, 2 | 2022-09-27 |
| Double trench MOSFET with trench gate Grant 11,322,625 - Dun , et al. May 3, 2 | 2022-05-03 |
| Double Trench MOSFET With Trench Gate App 20200373439 - Dun; Haiping ; et al. | 2020-11-26 |
| Deep Trench Surrounded MOSFET with Planar MOS Gate App 20200373438 - Dun; Haiping ; et al. | 2020-11-26 |
| Methods Of Manufacturing A Deep Trench Super Junction MOSFET App 20200335580 - Dun; Haiping ; et al. | 2020-10-22 |
| Deep trench MOS barrier junction all around rectifier and MOSFET Grant 10,770,599 - Dun , et al. Sep | 2020-09-08 |
| Method Of Manufacturing A Deep Trench Super Junction MOSFET App 20190326389 - Dun; Haiping ; et al. | 2019-10-24 |
| High speed Schottky rectifier Grant 10,304,971 - Yu , et al. | 2019-05-28 |
| Deep Trench MOS Barrier Junction All Around Rectifier and MOSFET App 20180138322 - Dun; Haiping ; et al. | 2018-05-17 |
| High Speed Schottky Rectifier App 20180019348 - Yu; Ho-Yuan ; et al. | 2018-01-18 |
| Forming a cap above a metal layer App 20060180945 - Seshan; Krishna ; et al. | 2006-08-17 |
| Forming a cap above a metal layer Grant 7,056,817 - Seshan , et al. June 6, 2 | 2006-06-06 |
| Forming a cap above a metal layer App 20040094836 - Seshan, Krishna ; et al. | 2004-05-20 |
| Device and substrate orientation for defect reduction and transistor length and width increase Grant 5,171,703 - Lin , et al. December 15, 1 | 1992-12-15 |
| SEC | 0001721581 | Dun Haiping |
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