Dressler; Cyril

Patent Applications and Registrations

Patent applications and USPTO patent grants for Dressler; Cyril.The latest application filed is for "magnetoresistance element with improved response to magnetic fields".

Company Profile

0.7.6

Dressler; Cyril - Tullins FR

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Magnetoresistance element with an improved seed layer to promote an improved response to magnetic fields Grant 9,804,234 - Dressler , et al. October 31, 2	2017-10-31
Magnetoresistance element with improved response to magnetic fields Grant 9,529,060 - Fermon , et al. December 27, 2	2016-12-27
Memory device and CBRAM memory with improved reliability Grant 9,082,965 - Dressler , et al. July 14, 2	2015-07-14
Magnetoresistance Element With Improved Response to Magnetic Fields App 20150194597 - Fermon; Claude ; et al.	2015-07-09
Magnetoresistance Element with an Improved Seed Layer to Promote an Improved Response to Magnetic Fields App 20150192649 - Dressler; Cyril ; et al.	2015-07-09
Process for manufacturing a CBRAM memory having enhanced reliability Grant 8,048,713 - Sousa , et al. November 1, 2	2011-11-01
Method for making PMC type memory cells Grant 8,021,953 - Dressler , et al. September 20, 2	2011-09-20
Memory Device And Cbram Memory With Improved Reliability App 20110121254 - Dressler; Cyril ; et al.	2011-05-26
Method For Making Pmc Type Memory Cells App 20100291748 - DRESSLER; Cyril ; et al.	2010-11-18
Method for making PMC type memory cells Grant 7,833,822 - Dressler , et al. November 16, 2	2010-11-16
Process For Manufacturing A Cbram Memory Having Enhanced Reliability App 20090098681 - Sousa; Veronique ; et al.	2009-04-16
Method For Making Pmc Type Memory Cells App 20070148882 - Dressler; Cyril ; et al.	2007-06-28

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