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Apparatus for low power write and read operations for resistive memory Grant 11,024,356 - Wei , et al. June 1, 2 | 2021-06-01 |
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Apparatus for low power write and read operations for resistive memory Grant 10,068,628 - Wei , et al. September 4, 2 | 2018-09-04 |
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Low resistance bitline and sourceline apparatus for improving read and write operations of a nonvolatile memory Grant 9,865,322 - Dray , et al. January 9, 2 | 2018-01-09 |
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Sense Amplifier App 20170169870 - Dray; Cyrille ;   et al. | 2017-06-15 |
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Low Resistance Bitline And Sourceline Apparatus For Improving Read And Write Operations Of A Nonvolatile Memory App 20170018298 - Dray; Cyrille ;   et al. | 2017-01-19 |
Low resistance bitline and sourceline apparatus for improving read and write operations of a nonvolatile memory Grant 9,478,273 - Dray , et al. October 25, 2 | 2016-10-25 |
Apparatus for boosting source-line voltage to reduce leakage in resistive memories Grant 9,418,761 - Arslan , et al. August 16, 2 | 2016-08-16 |
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Apparatus For Low Power Write And Read Operations For Resistive Memory App 20160125927 - WEI; Liqiong ;   et al. | 2016-05-05 |
Apparatuses and methods for detecting write completion for resistive memory Grant 9,286,976 - Lin , et al. March 15, 2 | 2016-03-15 |
Low power transient voltage collapse apparatus and method for a memory cell Grant 9,263,121 - Karl , et al. February 16, 2 | 2016-02-16 |
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System and Methods Using a Multiplexed Reference for Sense Amplifiers App 20140153313 - Boujamaa; El Mehdi ;   et al. | 2014-06-05 |
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Method for implementing an SRAM memory information storage device Grant 8,335,121 - Dray , et al. December 18, 2 | 2012-12-18 |
Method and system for reading from memory cells in a memory device Grant 8,331,166 - Dray , et al. December 11, 2 | 2012-12-11 |
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Memory with intervening transistor Grant 8,243,490 - Dray August 14, 2 | 2012-08-14 |
Nonvolatile Memory Architecture App 20120099359 - Dray; Cyrille ;   et al. | 2012-04-26 |
Memory With Intervening Transistor App 20110128767 - Dray; Cyrille | 2011-06-02 |
Method for implementing an SRAM memory information storage device App 20100265758 - Dray; Cyrille ;   et al. | 2010-10-21 |
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Integrated circuit and method of detecting a signal edge transition Grant 7,782,093 - Dray August 24, 2 | 2010-08-24 |
SRAM memory device with improved write operation and method thereof Grant 7,751,229 - Dray , et al. July 6, 2 | 2010-07-06 |
Memory device and testing with write completion detection Grant 7,630,264 - Dray , et al. December 8, 2 | 2009-12-08 |
Device for setting up a write current in an MRAM type memory and memory comprising Grant 7,545,686 - Lasseuguette , et al. June 9, 2 | 2009-06-09 |
Recursive device for switching over a high potential greater than a nominal potential of a technology in which the device is made and related system and method Grant 7,489,559 - Dray , et al. February 10, 2 | 2009-02-10 |
Memory Device and Testing App 20090027987 - Dray; Cyrille ;   et al. | 2009-01-29 |
Integrated circuit and method of detecting a signal edge transition App 20080290899 - Dray; Cyrille | 2008-11-27 |
High-speed buffer circuit, system and method App 20080218211 - Barasinski; Sebastien ;   et al. | 2008-09-11 |
Sram Memory Device With Improved Write Operation And Method Thereof App 20080159014 - Dray; Cyrille ;   et al. | 2008-07-03 |
Column redundancy system for an integrated circuit memory Grant 7,391,661 - Dray June 24, 2 | 2008-06-24 |
Magnetic random access memory array having bit/word lines for shared write select and read operations Grant 7,372,728 - Dray , et al. May 13, 2 | 2008-05-13 |
Electrically erasable and programmable, non-volatile semiconductor memory device having a single layer of gate material, and corresponding memory plane Grant 7,333,362 - Gendrier , et al. February 19, 2 | 2008-02-19 |
Magnetic Random Access Memory Array Having Bit/Word Lines for Shared Write Select and Read Operations App 20070189066 - Dray; Cyrille ;   et al. | 2007-08-16 |
Recursive device for switching over a high potential greater than a nominal potential of a technology in which the device is made and related system and method App 20070171696 - Dray; Cyrille ;   et al. | 2007-07-26 |
Magnetic random access memory array having bit/word lines for shared write select and read operations Grant 7,209,383 - Dray , et al. April 24, 2 | 2007-04-24 |
Column redundancy system for an integrated circuit memory App 20070033450 - Dray; Cyrille | 2007-02-08 |
Memory architecture with segmented writing lines Grant 7,139,212 - Dray , et al. November 21, 2 | 2006-11-21 |
Switch arrangement for switching a node between different voltages without generating combinational currents Grant 7,110,315 - Dray September 19, 2 | 2006-09-19 |
Device for setting up a write current in an MRAM type memory and memory comprising App 20060050585 - Lasseuguette; Jean ;   et al. | 2006-03-09 |
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Memory architecture with segmented writing lines App 20050281090 - Dray, Cyrille ;   et al. | 2005-12-22 |
Electrically erasable and programmable, non-volatile semiconductor memory device having a single layer of gate material, and corresponding memory plane App 20050219912 - Gendrier, Philippe ;   et al. | 2005-10-06 |
Non-volatile programmable and electrically erasable memory with a single layer of gate material Grant 6,940,119 - Dray , et al. September 6, 2 | 2005-09-06 |
Switch arrangement for switching a node between different voltages without generating combinational currents App 20050077924 - Dray, Cyrille | 2005-04-14 |
Device for controlling a circuit generating reference voltages Grant 6,850,112 - Dray February 1, 2 | 2005-02-01 |
Device for controlling a circuit generating reference voltages App 20040113680 - Dray, Cyrille | 2004-06-17 |
Memory cell of the famos type having several programming logic levels Grant 6,728,135 - Dray , et al. April 27, 2 | 2004-04-27 |
Non-volatile programable and electrically erasable memory with a single layer of gate material App 20040062108 - Dray, Cyrille ;   et al. | 2004-04-01 |
FAMOS type non-volatile memory Grant 6,707,697 - Dray , et al. March 16, 2 | 2004-03-16 |
Method of erasing a FAMOS memory cell and a corresponding memory cell Grant 6,667,909 - Fournel , et al. December 23, 2 | 2003-12-23 |
High-voltage switching device and application to a non-volatile memory Grant 6,639,427 - Dray , et al. October 28, 2 | 2003-10-28 |
Non-volatile memory architecture and integrated circuit comprising a corresponding memory Grant 6,639,838 - Fournel , et al. October 28, 2 | 2003-10-28 |
Non-volatile memory cell Grant 6,639,270 - Dray October 28, 2 | 2003-10-28 |
Memory cell of the famos type having several programming logic levels App 20030063498 - Dray, Cyrille ;   et al. | 2003-04-03 |
Non-volatile memory architecture and integrated circuit comprising a corresponding memory App 20020186599 - Fournel, Richard ;   et al. | 2002-12-12 |
Method of erasing a FAMOS memory cell and a corresponding memory cell App 20020176289 - Fournel, Richard ;   et al. | 2002-11-28 |
FAMOS type non-volatile memory App 20020175353 - Dray, Cyrille ;   et al. | 2002-11-28 |
High-voltage switching device and application to a non-volatile memory App 20020079545 - Dray, Cyrille ;   et al. | 2002-06-27 |
Non-volatile memory cell App 20020050610 - Dray, Cyrille | 2002-05-02 |