Drachev; Roman
Patent Applications and Registrations
Patent applications and USPTO patent grants for Drachev; Roman.The latest application filed is for "sic crystal and wafer cut from crystal with low dislocation density".
- Drachev; Roman - Midland MI
| Patent | Date |
|---|---|
| Graphite crucible for sublimation growth of SiC crystal Grant 10,435,810 - Loboda , et al. O | 2019-10-08 |
| Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion Grant 9,797,064 - Loboda , et al. October 24, 2 | 2017-10-24 |
| Sic Crystal And Wafer Cut From Crystal With Low Dislocation Density App 20170137963 - Loboda; Mark ; et al. | 2017-05-18 |
| Sic Crystal And Wafer Cut From Crystal With Low Dislocation Density App 20140220296 - Loboda; Mark ; et al. | 2014-08-07 |
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