Downey; Brian P.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Downey; Brian P..The latest application filed is for "multifunctional integrated acoustic devices and systems using epitaxial materials".

Company Profile

5.8.10

Downey; Brian P. - Cheverly MD
Downey; Brian P. - Washington DC
Downey; Brian P. - Alexandria VA US

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Multifunctional Integrated Acoustic Devices and Systems Using Epitaxial Materials App 20210091746 - Gokhale; Vikrant J. ; et al.	2021-03-25
Expitaxial Semiconductor/superconductor Heterostructures App 20210043824 - Yan; Rusen ; et al.	2021-02-11
Epitaxial metallic transition metal nitride layers for compound semiconductor devices Grant 10,340,353 - Meyer , et al.	2019-07-02
Scandium-containing III-N etch-stop layers for selective etching of III-nitrides and related materials Grant 10,283,597 - Hardy , et al.	2019-05-07
Selective oxidation of transition metal nitride layers within compound semiconductor device structures Grant 10,262,856 - Meyer , et al.	2019-04-16
Selective Oxidation of Transition Metal Nitride Layers Within Compound Semiconductor Device Structures App 20180174833 - Meyer; David J. ; et al.	2018-06-21
Scandium-Containing III-N Etch-Stop Layers for Selective Etching of III-Nitrides and Related Materials App 20180130883 - Hardy; Matthew T. ; et al.	2018-05-10
Lift-off of epitaxial layers from silicon carbide or compound semiconductor substrates Grant 9,876,081 - Meyer , et al. January 23, 2	2018-01-23
Method for fabricating suspended MEMS structures Grant 9,656,859 - Meyer , et al. May 23, 2	2017-05-23
Method for Fabricating Suspended MEMS Structures App 20160304340 - Meyer; David J. ; et al.	2016-10-20
Epitaxial metallic transition metal nitride layers for compound semiconductor devices App 20160035851 - Meyer; David J. ; et al.	2016-02-04
Lift-off Of Epitaxial Layers From Silicon Carbide Or Compound Semiconductor Substrates App 20150021624 - Meyer; David J. ; et al.	2015-01-22

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