loadpatents
Patent applications and USPTO patent grants for DOSILICON CO., LTD..The latest application filed is for "dram cell array using facing bar and method of fabricating the same".
Patent | Date |
---|---|
Multi-bank type semiconductor memory device with reduced current consumption in data lines Grant 11,049,548 - Lee June 29, 2 | 2021-06-29 |
DRAM cell array using facing bar and method of fabricating the same Grant 10,811,418 - Kim , et al. October 20, 2 | 2020-10-20 |
NAND flash memory device having facing bar and method of fabricating the same Grant 10,461,091 - Kim , et al. Oc | 2019-10-29 |
Dram Cell Array Using Facing Bar And Method Of Fabricating The Same App 20190237467 - Kim; Jin Ho ;   et al. | 2019-08-01 |
Nand Flash Memory Device Having Facing Bar And Method Of Fabricating The Same App 20190148388 - KIM; Jin Ho ;   et al. | 2019-05-16 |
DRAM cell for reducing layout area and fabricating method thereof Grant 10,177,153 - Kang J | 2019-01-08 |
Dram Cell For Reducing Layout Area And Fabricating Method Thereof App 20180033791 - KANG; Tae Gyoung | 2018-02-01 |
uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.
While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.
All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.