DOMEIJ; Martin

Patent Applications and Registrations

Patent applications and USPTO patent grants for DOMEIJ; Martin.The latest application filed is for "termination structures with reduced dynamic output capacitance loss".

Company Profile

1.13.12

DOMEIJ; Martin - Sollentuna SE
Domeij; Martin - San Jose CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Termination Structures With Reduced Dynamic Output Capacitance Loss App 20220199764 - ROIG-GUITART; Jaume ; et al.	2022-06-23
Silicon Carbide Trench Power Device App 20210050420 - LEE; Kwangwon ; et al.	2021-02-18
Short-circuit performance for silicon carbide semiconductor device Grant 10,749,002 - Domeij A	2020-08-18
Short-circuit Performance For Silicon Carbide Semiconductor Device App 20200083331 - DOMEIJ; Martin	2020-03-12
Short-circuit performance for silicon carbide semiconductor device Grant 10,504,995 - Domeij Dec	2019-12-10
Silicon carbide (SiC) device with improved gate dielectric shielding Grant 10,453,950 - Domeij Oc	2019-10-22
SILICON CARBIDE (SiC) DEVICE WITH IMPROVED GATE DIELECTRIC SHIELDING App 20170288048 - DOMEIJ; Martin	2017-10-05
Silicon carbide (SiC) device with improved gate dielectric shielding Grant 9,685,550 - Domeij June 20, 2	2017-06-20
SiC bipolar junction transistor with reduced carrier lifetime in collector and a defect termination layer Grant 9,590,047 - Domeij March 7, 2	2017-03-07
Conductivity modulation in a silicon carbide bipolar junction transistor Grant 9,478,629 - Domeij , et al. October 25, 2	2016-10-25
SILICON CARBIDE (SiC) DEVICE WITH IMPROVED GATE DIELECTRIC SHIELDING App 20160190300 - DOMEIJ; Martin	2016-06-30
Sic Bipolar Junction Transistor With Reduced Carrier Lifetime In Collector And A Defect Termination Layer App 20150115283 - Domeij; Martin	2015-04-30
Bipolar junction transistor in silicon carbide with improved breakdown voltage Grant 8,907,351 - Domeij December 9, 2	2014-12-09
Silicon carbide bipolar junction transistor (BJT) having a surface electrode disposed on a surface passivation layer formed at a region between emitter contact and base contact Grant 8,853,827 - Domeij October 7, 2	2014-10-07
Silicon carbide semiconductor device Grant 8,829,533 - Domeij September 9, 2	2014-09-09
Bipolar Junction Transistor In Silicon Carbide With Improved Breakdown Voltage App 20140054612 - DOMEIJ; Martin	2014-02-27
Conductivity Modulation In A Silicon Carbide Bipolar Junction Transistor App 20130187173 - Domeij; Martin ; et al.	2013-07-25
Silicon Carbide Bipolar Junction Transistor App 20130126910 - Domeij; Martin	2013-05-23
Silicon carbide bipolar junction transistor (BJT) having a surface electrode disposed on top of a dielectric layer formed at a region between emitter contact and base contact Grant 8,378,390 - Domeij February 19, 2	2013-02-19
Silicon Carbide Bipolar Junction Transistor App 20120007103 - Domeij; Martin	2012-01-12
Silicon Carbide Semiconductor Device App 20100117097 - Domeij; Martin	2010-05-13

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