loadpatents
name:-0.038483142852783
name:-0.030803918838501
name:-0.0026619434356689
DOLNY; Gary M Patent Filings

DOLNY; Gary M

Patent Applications and Registrations

Patent applications and USPTO patent grants for DOLNY; Gary M.The latest application filed is for "mosfet transistors with hybrid contact".

Company Profile
2.28.35
  • DOLNY; Gary M - Mountain Top PA
  • DOLNY; Gary M. - Mountain Top PA
  • Dolny; Gary M. - Chapel Hill NC
  • Dolny; Gary M. - Mountaintop PA
  • Dolny; Gary M. - US
  • Dolny; Gary M. - Newtown PA
  • Dolny; Gary M. - Middletown Township Bucks County
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Mosfet Transistors With Hybrid Contact
App 20220254914 - TONER; Brendan ;   et al.
2022-08-11
Ldmos With Self-aligned Body And Hybrid Source
App 20220181444 - TONER; Brendan ;   et al.
2022-06-09
Methods for LDMOS and other MOS transistors with hybrid contact
Grant 11,322,611 - Toner , et al. May 3, 2
2022-05-03
Methods For Ldmos And Other Mos Transistors With Hybrid Contact
App 20210134999 - TONER; Brendan ;   et al.
2021-05-06
Devices for LDMOS and other MOS transistors with hybrid contact
Grant 10,892,362 - Toner , et al. January 12, 2
2021-01-12
Devices and methods for a power transistor having a Schottky or Schottky-like contact
Grant 10,510,869 - Dolny , et al. Dec
2019-12-17
Devices And Methods For A Power Transistor Having A Schottky Or Schottky-like Contact
App 20180212041 - DOLNY; Gary M. ;   et al.
2018-07-26
Devices and methods for a power transistor having a schottky or schottky-like contact
Grant 9,947,787 - Dolny , et al. April 17, 2
2018-04-17
Devices And Methods For A Power Transistor Having A Schottky Or Schottky-like Contact
App 20170323970 - DOLNY; Gary M. ;   et al.
2017-11-09
Trench-gate field effect transistor
Grant 8,884,365 - Yilmaz , et al. November 11, 2
2014-11-11
Shielded gate field effect transistors
Grant 8,803,207 - Grebs , et al. August 12, 2
2014-08-12
Structure And Method For Forming Trench-gate Field Effect Transistor
App 20130248991 - YILMAZ; Hamza ;   et al.
2013-09-26
Structure and method for forming trench-gate field effect transistor with source plug
Grant 8,441,069 - Yilmaz , et al. May 14, 2
2013-05-14
Methods Of Making Power Semiconductor Devices With Thick Bottom Oxide Layer
App 20120220091 - Challa; Ashok ;   et al.
2012-08-30
Semiconductor Power Device Having A Top-side Drain Using A Sinker Trench
App 20120153384 - Grebs; Thomas E. ;   et al.
2012-06-21
Trench-Gate Field Effect Transistors and Methods of Forming the Same
App 20120104490 - Yilmaz; Hamza ;   et al.
2012-05-03
Semiconductor power device having a top-side drain using a sinker trench
Grant 8,148,233 - Grebs , et al. April 3, 2
2012-04-03
Methods of forming inter-poly dielectric (IPD) layers in power semiconductor devices
Grant 8,143,123 - Grebs , et al. March 27, 2
2012-03-27
Rugged semiconductor device architecture
Grant 8,124,981 - Rexer , et al. February 28, 2
2012-02-28
Lateral Drain Mosfet With Substrate Drain Connection
App 20120018803 - Grebs; Thomas E. ;   et al.
2012-01-26
Semiconductor Power Device Having a Top-side Drain Using a Sinker Trench
App 20110260241 - Grebs; Thomas E. ;   et al.
2011-10-27
Method of forming trench-gate field effect transistors
Grant 8,043,913 - Yilmaz , et al. October 25, 2
2011-10-25
Lateral MOSFET with substrate drain connection
Grant 8,039,897 - Grebs , et al. October 18, 2
2011-10-18
Semiconductor power device having a top-side drain using a sinker trench
Grant 8,026,558 - Grebs , et al. September 27, 2
2011-09-27
Method for Forming Shielded Gate Field Effect Transistors
App 20110212586 - Grebs; Thomas E. ;   et al.
2011-09-01
Method of Forming Trench-Gate Field Effect Transistors
App 20110177662 - Yilmaz; Hamza ;   et al.
2011-07-21
Trench-gate field effect transistor with channel enhancement region and methods of forming the same
Grant 7,923,776 - Yilmaz , et al. April 12, 2
2011-04-12
Trench-gate Field Effect Transistor With Channel Enhancement Region And Methods Of Forming The Same
App 20100258862 - Yilmaz; Hamza ;   et al.
2010-10-14
Semiconductor Power Device Having a Top-side Drain Using a Sinker Trench
App 20100237415 - Grebs; Thomas E. ;   et al.
2010-09-23
Lateral Mosfet With Substrate Drain Connection
App 20100155839 - Grebs; Thomas E. ;   et al.
2010-06-24
Power transistor with trench sinker for contacting the backside
Grant 7,732,876 - Grebs , et al. June 8, 2
2010-06-08
Rugged Semiconductor Device Architecture
App 20090302327 - Rexer; Christopher L. ;   et al.
2009-12-10
Trench-Gate Field Effect Transistors and Methods of Forming the Same
App 20090230465 - Yilmaz; Hamza ;   et al.
2009-09-17
Method for Forming Shielded Gate Field Effect Transistor Using Spacers
App 20090111231 - Grebs; Thomas E. ;   et al.
2009-04-30
Trench-gate field effect transistors and methods of forming the same
Grant 7,504,303 - Yilmaz , et al. March 17, 2
2009-03-17
Dense trench MOSFET with decreased etch sensitivity to deposition and etch processing
Grant 7,436,021 - Hao , et al. October 14, 2
2008-10-14
Trench FET with improved body to gate alignment
Grant 7,416,948 - Kraft , et al. August 26, 2
2008-08-26
Methods of Forming Inter-poly Dielectric (IPD) Layers in Power Semiconductor Devices
App 20080199997 - Grebs; Thomas E. ;   et al.
2008-08-21
Trenched Shield Gate Power Semiconductor Devices and Methods of Manufacture
App 20080150020 - Challa; Ashok ;   et al.
2008-06-26
Power Transistor with Trench Sinker for Contacting the Backside
App 20080142883 - Grebs; Thomas E. ;   et al.
2008-06-19
Power Semiconductor Devices Having Termination Structures and Methods of Manufacture
App 20080135931 - Challa; Ashok ;   et al.
2008-06-12
Semiconductor power device having a top-side drain using a sinker trench
Grant 7,352,036 - Grebs , et al. April 1, 2
2008-04-01
Trench FET with Improved Body to Gate Alignment
App 20070082441 - Kraft; Nathan L. ;   et al.
2007-04-12
Structures and methods for forming shielded gate field effect transistors
App 20070032020 - Grebs; Thomas E. ;   et al.
2007-02-08
Trench-gate field effect transistors and methods of forming the same
App 20060273386 - Yilmaz; Hamza ;   et al.
2006-12-07
Power semiconductor devices and methods of manufacture
App 20060214221 - Challa; Ashok ;   et al.
2006-09-28
Power semiconductor devices and methods of manufacture
App 20060214222 - Challa; Ashok ;   et al.
2006-09-28
Semiconductor power device having a top-side drain using a sinker trench
App 20060030142 - Grebs; Thomas E. ;   et al.
2006-02-09
Power semiconductor devices and methods of manufacture
App 20050167742 - Challa, Ashok ;   et al.
2005-08-04
Quick punch through IGBT having gate-controllable DI/DT and reduced EMI during inductive turn off
Grant 6,831,329 - Yedinak , et al. December 14, 2
2004-12-14
Buried gate-field termination structure
Grant 6,818,947 - Grebs , et al. November 16, 2
2004-11-16
Dense trench MOSFET with decreased etch sensitivity to deposition and etch processing
App 20040104427 - Hao, Jifa ;   et al.
2004-06-03
Buried gate-field termination structure
App 20040056302 - Grebs, Thomas E. ;   et al.
2004-03-25
Power MOS device with buried gate
Grant 6,638,826 - Zeng , et al. October 28, 2
2003-10-28
Dense trench MOSFET with decreased etch sensitivity to deposition and etch processing
Grant 6,635,535 - Hao , et al. October 21, 2
2003-10-21
Dense trench MOSFET with decreased etch sensitivity to deposition and etch processing
App 20030096482 - Hao, Jifa ;   et al.
2003-05-22
Quick punch through IGBT having gate-controllable di/dt and reduced EMI during inductive turn off
App 20030080377 - Yedinak, Joseph A. ;   et al.
2003-05-01
Power MOS device with buried gate
App 20030011027 - Zeng, Jun ;   et al.
2003-01-16
Method for fabricating a switching transistor having a capacitive network proximate a drift region
Grant 5,587,329 - Hseuh , et al. December 24, 1
1996-12-24
Structure for a complementary-symmetry COMFET pair
Grant 4,998,156 - Goodman , et al. March 5, 1
1991-03-05
Method for fabricating bidirectional vertical power MOS device
Grant 4,700,460 - Dolny , et al. October 20, 1
1987-10-20

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