loadpatents
name:-0.0023481845855713
name:-0.018632888793945
name:-0.00075078010559082
Doering; Robert R. Patent Filings

Doering; Robert R.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Doering; Robert R..The latest application filed is for "low-offset graphene hall sensor".

Company Profile
0.16.2
  • Doering; Robert R. - Garland TX
  • Doering; Robert R. - Plano TX
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Low-offset Graphene Hall sensor
Grant 10,001,529 - Polley , et al. June 19, 2
2018-06-19
Low-Offset Graphene Hall Sensor
App 20170067970 - Polley; Arup ;   et al.
2017-03-09
Circuit and method for reducing SRAM standby power
Grant 6,990,035 - Redwine , et al. January 24, 2
2006-01-24
Circuit and method for reducing SRAM standby power
App 20050122821 - Redwine, Donald J. ;   et al.
2005-06-09
High performance composed pillar dRAM cell
Grant 5,334,548 - Shen , et al. * August 2, 1
1994-08-02
High performance composed pillar DRAM cell
Grant 5,300,450 - Shen , et al. * April 5, 1
1994-04-05
Method of fabricating a composed pillar transistor DRAM Cell
Grant 5,198,383 - Teng , et al. March 30, 1
1993-03-30
High density dynamic RAM with trench capacitor
Grant 5,170,234 - Baglee , et al. December 8, 1
1992-12-08
Method of making high performance composed pillar dRAM cell
Grant 5,106,776 - Shen , et al. April 21, 1
1992-04-21
High performance composed pillar dRAM cell
Grant 5,103,276 - Shen , et al. April 7, 1
1992-04-07
Diffused bit line trench capacitor dram cell
Grant 4,958,206 - Teng , et al. September 18, 1
1990-09-18
Dram cell and method
Grant 4,916,524 - Teng , et al. April 10, 1
1990-04-10
Dram cell and method
Grant 4,830,978 - Teng , et al. May 16, 1
1989-05-16
Method of making field-plate isolated CMOS devices
Grant 4,696,092 - Doering , et al. * September 29, 1
1987-09-29
High density CMOS integrated circuit manufacturing process
Grant 4,677,739 - Doering , et al. July 7, 1
1987-07-07
Method of making MOS VLSI semiconductor device with metal gate and clad source/drain
Grant 4,661,374 - Doering April 28, 1
1987-04-28
Method of making field-plate isolated CMOS devices
Grant 4,561,170 - Doering , et al. December 31, 1
1985-12-31
Integrated circuit fabrication method utilizing selective etching and oxidation to form isolation regions
Grant 4,561,172 - Slawinski , et al. December 31, 1
1985-12-31

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