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Patent applications and USPTO patent grants for Dockerty; Robert C..The latest application filed is for "mosfet structure and process to form micrometer long source/drain spacing".
Patent | Date |
---|---|
MOSFET Structure and process to form micrometer long source/drain spacing Grant 4,445,267 - De La Moneda , et al. May 1, 1 | 1984-05-01 |
Sub-micrometer channel length field effect transistor process Grant 4,430,791 - Dockerty February 14, 1 | 1984-02-14 |
Borderless diffusion contact process and structure Grant 4,409,722 - Dockerty , et al. October 18, 1 | 1983-10-18 |
Schottky barrier diode having chargeable floating gate Grant T953,005 - Anantha , et al. December 7, 1 | 1976-12-07 |
Non-volatile memory cell and array using substrate current Grant 3,992,701 - Abbas , et al. November 16, 1 | 1976-11-16 |
Process for forming apertures in silicon bodies Grant 3,962,052 - Abbas , et al. June 8, 1 | 1976-06-08 |
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