DOAN; TRUNG

Patent Applications and Registrations

Patent applications and USPTO patent grants for DOAN; TRUNG.The latest application filed is for "white light unit, backlight unit and liquid crystal display device using the same".

Company Profile

0.10.5

DOAN; TRUNG - Los Gatos CA
Doan; Trung - Boise ID

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
White Light Unit, Backlight Unit And Liquid Crystal Display Device Using The Same App 20080123023 - DOAN; TRUNG ; et al.	2008-05-29
Polishing pad conditioner and methods of manufacture and recycling Grant 6,945,857 - Doan , et al. September 20, 2	2005-09-20
Method of depositing tungsten nitride using a source gas comprising silicon Grant 6,730,954 - Meikle , et al. May 4, 2	2004-05-04
Systems for electrolytic removal of metals from substrates App 20040040863 - Lee, Whonchee ; et al.	2004-03-04
Advance metallization process Grant 6,653,220 - Ma , et al. November 25, 2	2003-11-25
Method of depositing tungsten nitride using a source gas comprising silicon Grant 6,472,323 - Meikle , et al. October 29, 2	2002-10-29
Method of depositing tungsten nitride using a source gas comprising silicon Grant 6,429,086 - Meikle , et al. August 6, 2	2002-08-06
Method of depositing tungsten nitride using a source gas comprising silicon App 20020045322 - Meikle, Scott ; et al.	2002-04-18
Advance metallization process App 20020004297 - Ma, Manny ; et al.	2002-01-10
Uniform dielectric layer and method to form same App 20010024886 - Doan, Trung	2001-09-27
Etch process for aligning a capacitor structure and an adjacent contact corridor Grant 6,274,423 - Prall , et al. August 14, 2	2001-08-14
Advance metallization process Grant 6,066,548 - Ma , et al. May 23, 2	2000-05-23
Etch process for aligning a capacitor structure and an adjacent contact corridor Grant 5,866,453 - Prall , et al. February 2, 1	1999-02-02
Method of depositing tungsten nitride using a source gas comprising silicon Grant 5,691,235 - Meikle , et al. November 25, 1	1997-11-25
Process to mechanically and plastically deform solid ductile metal to fill contacts of conductive channels with ductile metal and process for dry polishing excess metal from a semiconductor wafer Grant 5,073,518 - Doan , et al. December 17, 1	1991-12-17

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