Dmitriev; Vladimir A.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Dmitriev; Vladimir A..The latest application filed is for "method and apparatus for fabricating crack-free group iii nitride semiconductor materials".

Company Profile

0.33.35

Dmitriev; Vladimir A. - Gaithersburg MD US
Dmitriev; Vladimir A - Gaithersberg MD
Dmitriev; Vladimir A. - Bethesda MD
Dmitriev; Vladimir A. - Fuquay-Varina NC

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Apparatus and methods for controlling gas flows in a HVPE reactor Grant 9,416,464 - Dmitriev , et al. August 16, 2	2016-08-16
HVPE apparatus and methods for growth of p-type single crystal group III nitride materials Grant 8,647,435 - Dmitriev , et al. February 11, 2	2014-02-11
Bulk GaN and AlGaN single crystals Grant 8,372,199 - Melnik , et al. February 12, 2	2013-02-12
Method And Apparatus For Fabricating Crack-free Group Iii Nitride Semiconductor Materials App 20120076968 - Dmitriev; Vladimir A. ; et al.	2012-03-29
Method and apparatus for fabricating crack-free Group III nitride semiconductor materials Grant 8,092,597 - Dmitriev , et al. January 10, 2	2012-01-10
Bulk GaN and AlGaN single crystals Grant 8,092,596 - Melnik , et al. January 10, 2	2012-01-10
Method And Apparatus For Fabricating Crack-free Group Iii Nitride Semiconductor Materials App 20110114015 - Dmitriev; Vladimir A. ; et al.	2011-05-19
HVPE apparatus and methods for growth of indium containing materials and materials and structures grown thereby Grant 7,727,333 - Syrkin , et al. June 1, 2	2010-06-01
Apparatus for epitaxially growing semiconductor device structures with sharp layer interfaces utilizing HVPE Grant 7,670,435 - Tsvetkov , et al. March 2, 2	2010-03-02
Reactor for extended duration growth of gallium containing single crystals Grant 7,611,586 - Melnik , et al. November 3, 2	2009-11-03
Method for achieving low defect density AlGaN single crystal boules Grant 7,556,688 - Melnik , et al. July 7, 2	2009-07-07
BULK GaN AND AlGaN SINGLE CRYSTALS App 20090148984 - MELNIK; Yuri V. ; et al.	2009-06-11
Method For Simultaneously Producing Multiple Wafers During A Single Epitaxial Growth Run And Semiconductor Structure Grown Thereby App 20090130781 - Dmitriev; Vladimir A. ; et al.	2009-05-21
Method And Apparatus For Fabricating Crack-free Group Iii Nitride Semiconductor Materials App 20090092815 - Dmitriev; Vladimir A. ; et al.	2009-04-09
Method and apparatus for fabricating crack-free Group III nitride semiconductor materials Grant 7,501,023 - Dmitriev , et al. March 10, 2	2009-03-10
BULK GaN AND AlGaN SINGLE CRYSTALS App 20080257256 - MELNIK; Yuri V. ; et al.	2008-10-23
Reactor For Extended Duration Growth Of Gallium Containing Single Crystals App 20080022926 - Melnik; Yuri V. ; et al.	2008-01-31
Reactor for extended duration growth of gallium containing single crystals Grant 7,279,047 - Melnik , et al. October 9, 2	2007-10-09
Method for simultaneously producing multiple wafers during a single epitaxial growth run and semiconductor structure grown thereby App 20070032046 - Dmitriev; Vladimir A. ; et al.	2007-02-08
Method and apparatus for fabricating crack-free group III nitride semiconductor materials App 20060280668 - Dmitriev; Vladimir A. ; et al.	2006-12-14
HVPE apparatus for simultaneously producing multiple wafers during a single epitaxial growth run App 20060011135 - Dmitriev; Vladimir A. ; et al.	2006-01-19
Bulk GaN and AIGaN single crystals App 20050244997 - Melnik, Yuri V. ; et al.	2005-11-03
Manufacturing methods for semiconductor devices with multiple III-V material layers Grant 6,955,719 - Dmitriev , et al. October 18, 2	2005-10-18
Method for achieving low defect density AlGaN single crystal boules App 20050212001 - Melnik, Yuri V. ; et al.	2005-09-29
Bulk GaN and ALGaN single crystals Grant 6,936,357 - Melnik , et al. August 30, 2	2005-08-30
Bulk GaN and AlGaN single crystals App 20050164044 - Melnik, Yuri V. ; et al.	2005-07-28
Method and apparatus for fabricating crack-free Group III nitride semiconductor materials App 20050142391 - Dmitriev, Vladimir A. ; et al.	2005-06-30
Method for fabricating a P-N heterojunction device utilizing HVPE grown III-V compound layers and resultant device Grant 6,890,809 - Karpov , et al. May 10, 2	2005-05-10
Reactor for extended duration growth of gallium containing single crystals App 20050056222 - Melnik, Yuri V. ; et al.	2005-03-17
III-V compound semiconductor device with an AlxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layer Grant 6,849,862 - Nikolaev , et al. February 1, 2	2005-02-01
Manufacturing methods for semiconductor devices with multiple III-V material layers App 20040137657 - Dmitriev, Vladimir A. ; et al.	2004-07-15
Apparatus for epitaxially growing semiconductor device structures with submicron group III nitride layer utilizing HVPE Grant 6,706,119 - Tsvetkov , et al. March 16, 2	2004-03-16
III-V compound semiconductor device with an AIxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layer App 20040026704 - Nikolaev, Audrey E. ; et al.	2004-02-12
Bulk GaN and AlGaN single crystals App 20030226496 - Melnik, Yuri V. ; et al.	2003-12-11
Method of epitaxially growing device structures with submicron group III nitride layers utilizing HVPE Grant 6,660,083 - Tsvetkov , et al. December 9, 2	2003-12-09
Reactor For Extended Duration Growth Of Gallium Containing Single Crystals App 20030221619 - Melnik, Yuri V. ; et al.	2003-12-04
Method of epitaxially growing submicron group III nitride layers utilizing HVPE Grant 6,656,272 - Tsvetkov , et al. December 2, 2	2003-12-02
Reactor for extended duration growth of gallium containing single crystals Grant 6,656,285 - Melnik , et al. December 2, 2	2003-12-02
Method For Achieving Low Defect Density Aigan Single Crystal Boules App 20030205193 - Melnik, Yuri V. ; et al.	2003-11-06
Method for achieving low defect density GaN single crystal boules Grant 6,616,757 - Melnik , et al. September 9, 2	2003-09-09
Method for fabricating bulk GaN single crystals Grant 6,613,143 - Melnik , et al. September 2, 2	2003-09-02
Method for growing III-V compound semiconductor structures with an integral non-continuous quantum dot layer utilizing HVPE techniques Grant 6,599,133 - Nikolaev , et al. July 29, 2	2003-07-29
Method for fabricating bulk AlGaN single crystals Grant 6,576,054 - Melnik , et al. June 10, 2	2003-06-10
P-n heterojunction-based structures utilizing HVPE grown III-V compound layers Grant 6,559,467 - Nikolaev , et al. May 6, 2	2003-05-06
Method for growing p-type III-V compound material utilizing HVPE techniques Grant 6,555,452 - Nikolaev , et al. April 29, 2	2003-04-29
Method for fabricating a P-N heterojunction device utilizing HVPE grown III-V compound layers and resultant device App 20030049898 - Karpov, Sergey ; et al.	2003-03-13
Apparatus for epitaxially for growing semiconductor device structures with submicron group III nitride layer utilizing HVPE App 20020174833 - Tsvetkov, Denis V. ; et al.	2002-11-28
Method of epitaxially growing submicron group III nitride layers utilizing HVPE App 20020177312 - Tsvetkov, Denis V. ; et al.	2002-11-28
III-V compounds semiconductor device with an AlxByInzGa1-x-y-zN non continuous quantum dot layer Grant 6,479,839 - Nikolaev , et al. November 12, 2	2002-11-12
P-N homojunction-based structures utilizing HVPE growth III-V compound layers Grant 6,476,420 - Nikolaev , et al. November 5, 2	2002-11-05
Method for growing p-n homojunction-based structures utilizing HVPE techniques Grant 6,472,300 - Nikolaev , et al. October 29, 2	2002-10-29
Apparatus for epitaxially growing semiconductor device structures with sharp layer interfaces utilizing HVPE App 20020155713 - Tsvetkov, Denis V. ; et al.	2002-10-24
Method of epitaxially growing device structures with submicron group III nitride layers utilizing HVPE App 20020152951 - Tsvetkov, Denis V. ; et al.	2002-10-24
Method of epitaxially growing device structures with sharp layer interfaces utilizing HVPE App 20020155683 - Tsvetkov, Denis V. ; et al.	2002-10-24
P-n heterojunction-based structures utilizing HVPE grown III-V compound layers App 20020053679 - Nikolaev, Audrey E. ; et al.	2002-05-09
P-N homojunction-based structures utilizing HVPE grown III-V compound layers App 20020047127 - Nikolaev, Audrey E. ; et al.	2002-04-25
P-N junction-based structures utilizing HVPE grown III-V compound layers App 20020047135 - Nikolaev, Audrey E. ; et al.	2002-04-25
Method for growing p-n homojunction-based structures utilizing HVPE techniques App 20020039806 - Nikolaev, Audrey E. ; et al.	2002-04-04
III-V compounds semiconductor device with an AIxByInzGa1-x-y-zN non continuous quantum dot layer App 20020030192 - Nikolaev, Audrey E. ; et al.	2002-03-14
Method for growing p-type III-V compound material utilizing HVPE techniques App 20020028565 - Nikolaev, Audrey E. ; et al.	2002-03-07
Method for growing III-V compound semiconductor structures with an integral non-continuous quantum dot layer utilizing HVPE techniques App 20020025661 - Nikolaev, Audrey E. ; et al.	2002-02-28
Method for growing p-n heterojunction-based structures utilizing HVPE techniques App 20020022286 - Nikolaev, Audrey E. ; et al.	2002-02-21
III-V compound semiconductor device with an InGaN1-x-yPxASy non-continuous quantum dot layer App 20020017650 - Nikolaev, Audrey E. ; et al.	2002-02-14
Process for producing III-V nitride pn junctions and p-i-n junctions Grant 6,218,269 - Nikolaev , et al. April 17, 2	2001-04-17
Method for reducing micropipe formation in the epitaxial growth of silicon carbide and resulting silicon carbide structures Grant 5,679,153 - Dmitriev , et al. October 21, 1	1997-10-21

uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.

While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.

All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.