loadpatents
name:-0.031325817108154
name:-0.022053956985474
name:-0.007194995880127
Ding; Yongping Patent Filings

Ding; Yongping

Patent Applications and Registrations

Patent applications and USPTO patent grants for Ding; Yongping.The latest application filed is for "process method and structure for high voltage mosfets".

Company Profile
6.30.40
  • Ding; Yongping - San Jose CA
  • Ding; Yongping - Santa Clara CA
  • Ding; Yongping - Sunnyvale CA
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Process Method And Structure For High Voltage Mosfets
App 20200303517 - Ding; Yongping ;   et al.
2020-09-24
High-electron-mobility transistor with buried interconnect
Grant 10,665,711 - Shibib , et al.
2020-05-26
Methods for fabricating anode shorted field stop insulated gate bipolar transistor
Grant 10,522,666 - Bhalla , et al. Dec
2019-12-31
High-electron-mobility Transistor With Buried Interconnect
App 20190312137 - SHIBIB; Ayman ;   et al.
2019-10-10
High-electron-mobility transistor with buried interconnect
Grant 10,381,473 - Shibib , et al. A
2019-08-13
Process method and structure for high voltage MOSFETs
Grant 10,115,814 - Ding , et al. October 30, 2
2018-10-30
Methods for fabricating anode shorted field stop insulated gate bipolar transistor
Grant 10,050,134 - Bhalla , et al. August 14, 2
2018-08-14
Methods For Fabricating Anode Shorted Field Stop Insulated Gate Bipolar Transistor
App 20180204937 - Bhalla; Anup ;   et al.
2018-07-19
Power trench MOSFET with improved unclamped inductive switching (UIS) performance and preparation method thereof
Grant 9,997,593 - Ding , et al. June 12, 2
2018-06-12
High-electron-mobility Transistor With Buried Interconnect
App 20180158942 - SHIBIB; Ayman ;   et al.
2018-06-07
Process Method And Structure For High Voltage Mosfets
App 20180145167 - Ding; Yongping ;   et al.
2018-05-24
Process method and structure for high voltage MOSFETs
Grant 9,887,283 - Ding , et al. February 6, 2
2018-02-06
High voltage field balance metal oxide field effect transistor (FBM)
Grant 9,865,678 - Bhalla , et al. January 9, 2
2018-01-09
Power Trench Mosfet With Improved Unclamped Inductive Switching (uis) Performance And Preparation Method Thereof
App 20170373139 - Ding; Yongping ;   et al.
2017-12-28
Process method and structure for high voltage MOSFETS
Grant 9,755,052 - Ding , et al. September 5, 2
2017-09-05
Power trench MOSFET with improved unclamped inductive switching (UIS) performance and preparation method thereof
Grant 9,704,948 - Ding , et al. July 11, 2
2017-07-11
Assymetric poly gate for optimum termination design in trench power MOSFETs
Grant 9,627,526 - Lee , et al. April 18, 2
2017-04-18
Assymetric Poly Gate For Optimum Termination Design In Trench Power Mosfets
App 20170069750 - Lee; Yeeheng ;   et al.
2017-03-09
Termination Of High Voltage (hv) Devices With New Configurations And Methods
App 20160372542 - Lee; Yeeheng ;   et al.
2016-12-22
High Voltage Field Balance Metal Oxide Field Effect Transistor (fbm)
App 20160351659 - Bhalla; Anup ;   et al.
2016-12-01
Methods for fabricating anode shorted field stop insulated gate bipolar transistor
Grant 9,478,646 - Bhalla , et al. October 25, 2
2016-10-25
Methods For Fabricating Anode Shorted Field Stop Insulated Gate Bipolar Transistor
App 20160284797 - Bhalla; Anup ;   et al.
2016-09-29
High voltage field balance metal oxide field effect transistor (FBM)
Grant 9,450,083 - Bhalla , et al. September 20, 2
2016-09-20
Method of forming SGT MOSFETs with improved termination breakdown voltage
Grant 9,431,495 - Ding , et al. August 30, 2
2016-08-30
Semiconductor Device Employing Aluminum Alloy Lead-frame With Anodized Aluminum
App 20160056098 - Xue; Yan Xun ;   et al.
2016-02-25
Power Trench Mosfet With Improved Unclamped Inductive Switching (uis) Performance And Preparation Method Thereof
App 20160043168 - Ding; Yongping ;   et al.
2016-02-11
Method Of Forming Sgt Mosfets With Improved Termination Breakdown Voltage
App 20160043192 - Ding; Yongping ;   et al.
2016-02-11
Termination Of High Voltage (hv) Devices With New Configurations And Methods
App 20160013267 - Lee; Yeeheng ;   et al.
2016-01-14
High Voltage Field Balance Metal Oxide Field Effect Transistor (fbm)
App 20150372129 - Bhalla; Anup ;   et al.
2015-12-24
Semiconductor Device Employing Aluminum Alloy Lead-frame With Anodized Aluminum
App 20150262925 - Xue; Yan Xun ;   et al.
2015-09-17
High voltage field balance metal oxide field effect transistor (FBM)
Grant 9,129,822 - Bhalla , et al. September 8, 2
2015-09-08
Process Method And Structure For High Voltage Mosfets
App 20150060936 - Ding; Yongping ;   et al.
2015-03-05
A Process Method And Structure For High Voltage Mosfets
App 20140332844 - Ding; Yongping ;   et al.
2014-11-13
High Voltage Field Balance Metal Oxide Field Effect Transistor (fbm)
App 20140319604 - Bhalla; Anup ;   et al.
2014-10-30
Termination of high voltage (HV) devices with new configurations and methods
Grant 8,803,251 - Lee , et al. August 12, 2
2014-08-12
High voltage field balance metal oxide field effect transistor (FBM)
Grant 8,785,279 - Bhalla , et al. July 22, 2
2014-07-22
Semiconductor device employing aluminum alloy lead-frame with anodized aluminum
Grant 8,716,069 - Xue , et al. May 6, 2
2014-05-06
Method of forming an asymmetric poly gate for optimum termination design in trench power MOSFETS
Grant 8,697,520 - Lee , et al. April 15, 2
2014-04-15
Semiconductor Device Employing Aluminum Alloy Lead-frame With Anodized Aluminum
App 20140091446 - Xue; Yan Xun ;   et al.
2014-04-03
High Voltage Field Balance Metal Oxide Field Effect Transistor (fbm)
App 20140027841 - Bhalla; Anup ;   et al.
2014-01-30
Power MOSFET device with self-aligned integrated Schottky diode
Grant 8,587,061 - Lee , et al. November 19, 2
2013-11-19
Method Of Forming An Assymetric Poly Gate For Optimum Termination Design In Trench Power Mosfets
App 20130228857 - Lee; Yeeheng ;   et al.
2013-09-05
Method For Making Gate-oxide With Step-graded Thickness In Trenched Dmos Device For Reduced Gate-to-drain Capacitance
App 20130224919 - Ding; Yongping ;   et al.
2013-08-29
Methods For Fabricating Anode Shorted Field Stop Insulated Gate Bipolar Transistor
App 20130029461 - BHALLA; ANUP ;   et al.
2013-01-31
Termination of high voltage (HV) devices with new configurations and methods
App 20130020671 - Lee; Yeehang ;   et al.
2013-01-24
Power MOSFET Device with Self-Aligned Integrated Schottky Diode
App 20120292692 - Lee; Yeeheng ;   et al.
2012-11-22
Power MOSFET device with self-aligned integrated Schottky and its manufacturing method
Grant 8,252,648 - Lee , et al. August 28, 2
2012-08-28
Power MOSFET Device with Self-Aligned Integrated Schottky and its Manufacturing Method
App 20110316076 - Lee; Yeeheng ;   et al.
2011-12-29

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