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Patent applications and USPTO patent grants for Desilets; Brian H..The latest application filed is for "vertical bipolar transistor with recessed epitaxially grown intrinsic base region".
Patent | Date |
---|---|
Vertical bipolar transistor with recessed epitaxially grown intrinsic base region Grant 5,137,840 - Desilets , et al. August 11, 1 | 1992-08-11 |
Lateral transistor and method of making same Grant 5,043,786 - Desilets , et al. August 27, 1 | 1991-08-27 |
Method of making a lateral transistor Grant 4,965,217 - Desilets , et al. October 23, 1 | 1990-10-23 |
Method of selective reactive ion etching of substrates Grant 4,826,564 - Desilets , et al. May 2, 1 | 1989-05-02 |
Plasma etching reactor with reduced plasma potential Grant 4,600,464 - Desilets , et al. July 15, 1 | 1986-07-15 |
Reactive ion etching chamber Grant 4,384,938 - Desilets , et al. May 24, 1 | 1983-05-24 |
Etch end point detector using gas flow changes Grant 4,362,596 - Desilets , et al. December 7, 1 | 1982-12-07 |
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