loadpatents
name:-0.0034661293029785
name:-0.015594005584717
name:-0.0022978782653809
DeSalvo; Gregory C. Patent Filings

DeSalvo; Gregory C.

Patent Applications and Registrations

Patent applications and USPTO patent grants for DeSalvo; Gregory C..The latest application filed is for "small volume thin film and high energy density crystal capacitors".

Company Profile
0.9.2
  • DeSalvo; Gregory C. - Joppa MD
  • Desalvo; Gregory C. - Bellbrook OH
  • DeSalvo; Gregory C. - Beavercreek OH
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Small volume thin film and high energy density crystal capacitors
App 20070121274 - Talvacchio; John J. ;   et al.
2007-05-31
Low charging dielectric for capacitive MEMS devices and method of making same
App 20060138604 - Kirby; Christopher F. ;   et al.
2006-06-29
Stiffened backside fabrication for microwave radio frequency wafers
Grant 6,884,717 - Desalvo , et al. April 26, 2
2005-04-26
Measured via-hole etching
Grant 6,653,214 - Quach , et al. November 25, 2
2003-11-25
Complementary heterostructure integrated single metal transistor apparatus
Grant 6,222,210 - Cerny , et al. April 24, 2
2001-04-24
Complementary heterostructure integrated single metal transistor fabrication method
Grant 6,198,116 - Cerny , et al. March 6, 2
2001-03-06
Single layer integrated metal process for enhancement mode field-effect transistor
Grant 6,020,226 - Cerny , et al. February 1, 2
2000-02-01
Digital wet etching of semiconductor materials
Grant 6,004,881 - Bozada , et al. December 21, 1
1999-12-21
Single layer integrated metal process for high electron mobility transistor (HEMT) and pseudomorphic high electron mobility transistor (PHEMT)
Grant 5,976,920 - Nakano , et al. November 2, 1
1999-11-02
Single layer integrated metal process for metal semiconductor field effect transistor (MESFET)
Grant 5,869,364 - Nakano , et al. February 9, 1
1999-02-09
High electron mobility transistor (HEMT) and pseudomorphic high electron mobility transistor (PHEMT) devices with single layer integrated metal
Grant 5,698,870 - Nakano , et al. December 16, 1
1997-12-16

uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.

While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.

All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.

© 2024 USPTO.report | Privacy Policy | Resources | RSS Feed of Trademarks | Trademark Filings Twitter Feed