Derrickson; Alexander M.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Derrickson; Alexander M..The latest application filed is for "electrical isolation structure using reverse dopant implantation from source/drain region in semiconductor fin".

Company Profile

0.2.5

Derrickson; Alexander M. - Saratoga Springs NY
Derrickson; Alexander M. - Troy NY

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Electrical Isolation Structure Using Reverse Dopant Implantation From Source/drain Region In Semiconductor Fin App 20220285523 - Malinowski; Arkadiusz ; et al.	2022-09-08
Extended shallow trench isolation for ultra-low leakage in fin-type lateral bipolar junction transistor devices Grant 11,424,349 - Malinowski , et al. August 23, 2	2022-08-23
Extended Shallow Trench Isolation For Ultra-low Leakage In Fin-type Lateral Bipolar Junction Transistor Devices App 20220262931 - Malinowski; Arkadiusz ; et al.	2022-08-18
Lateral Bipolar Junction Transistor Device And Method Of Making Such A Device App 20220199810 - Malinowski; Arkadiusz ; et al.	2022-06-23
Bipolar Junction Transistor (bjt) Structure And Related Method App 20220173230 - Derrickson; Alexander M. ; et al.	2022-06-02
IC structure base and inner E/C material on raised insulator, and methods to form same Grant 11,152,496 - Singh , et al. October 19, 2	2021-10-19
Ic Structure Base And Inner E/c Material On Raised Insulator, And Methods To Form Same App 20210242335 - Singh; Jagar ; et al.	2021-08-05

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