Derkits, Jr.; Gustav E.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Derkits, Jr.; Gustav E..The latest application filed is for "optoelectronic device having a p-contact and an n-contact located over a same side of a substrate and a method of manufacture therefor".

Company Profile

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Derkits, Jr.; Gustav E. - New Providence NJ
Derkits, Jr.; Gustav E. - Boro of New Providence NJ

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Optoelectronic device having a P-contact and an N-contact located over a same side of a substrate and a method of manufacture therefor Grant 6,625,367 - Coult , et al. September 23, 2	2003-09-23
Method of forming a laser circuit having low penetration ohmic contact providing impurity gettering and the resultant laser circuit Grant 6,555,457 - Derkits, Jr. , et al. April 29, 2	2003-04-29
Semiconductor device with high-temperature ohmic contact and method of forming the same Grant 6,320,265 - Chakrabarti , et al. November 20, 2	2001-11-20
Complaint layer metallization Grant 5,559,817 - Derkits, Jr. , et al. September 24, 1	1996-09-24
Partially or fully recessed microlens fabrication Grant 5,079,130 - Derkits, Jr. January 7, 1	1992-01-07
Process for producing porous refractory metal layers embedded in semiconductor devices Grant 4,758,534 - Derkits, Jr. , et al. July 19, 1	1988-07-19
Lateral confinement of charge carriers in a multiple quantum well structure Grant 4,683,484 - Derkits, Jr. July 28, 1	1987-07-28
Selective area III-V growth and lift-off using tungsten patterning Grant 4,637,129 - Derkits, Jr. , et al. January 20, 1	1987-01-20

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