| Patent | Date |
|---|
Methods of operating integrated circuit devices having volatile and nonvolatile memory portions
Grant 10,446,747 - Derhacobian , et al. Oc | 2019-10-15 |
Read operations and circuits for memory devices having programmable elements, including programmable resistance elements
Grant 9,570,166 - Gilbert , et al. February 14, 2 | 2017-02-14 |
Programmable impedance element circuits and methods
Grant 9,159,414 - Derhacobian , et al. October 13, 2 | 2015-10-13 |
Application of relaxation voltage pulses to programmble impedance elements during read operations
Grant 9,007,814 - Derhacobian April 14, 2 | 2015-04-14 |
Memory cells, devices and method with dynamic storage elements and programmable impedance shadow elements
Grant 8,995,173 - Derhacobian March 31, 2 | 2015-03-31 |
Circuits and methods having programmable impedance elements
Grant 8,947,913 - Derhacobian , et al. February 3, 2 | 2015-02-03 |
Read operations and circuits for memory devices having programmable elements, including programmable resistance elements
Grant 8,913,444 - Gilbert , et al. December 16, 2 | 2014-12-16 |
Multi-terminal phase change devices
Grant 8,822,967 - Kordus, II , et al. September 2, 2 | 2014-09-02 |
Circuits having programmable impedance elements
Grant 8,687,403 - Derhacobian , et al. April 1, 2 | 2014-04-01 |
Integrated circuit devices and systems having programmable impedance elements with different response types
Grant 8,675,396 - Derhacobian , et al. March 18, 2 | 2014-03-18 |
PMC-based non-volatile CAM
Grant 8,659,926 - Derhacobian February 25, 2 | 2014-02-25 |
Reconfigurable memory arrays having programmable impedance elements and corresponding methods
Grant 8,331,128 - Derhacobian , et al. December 11, 2 | 2012-12-11 |
PMC-based non-volatile CAM
Grant 8,320,148 - Derhacobian November 27, 2 | 2012-11-27 |
Programmable impedance element circuits and methods
Grant 8,294,488 - Derhacobian , et al. October 23, 2 | 2012-10-23 |
Multi-Terminal Phase Change Devices
App 20120182794 - Kordus, II; Louis Charles ; et al. | 2012-07-19 |
Multi-terminal phase change devices
Grant 8,183,551 - Kordus, II , et al. May 22, 2 | 2012-05-22 |
Reconfigurable logic structures
Grant 7,755,389 - Murphy , et al. July 13, 2 | 2010-07-13 |
Reconfigurable Logic Structures
App 20090134910 - Murphy; Colin Neal ; et al. | 2009-05-28 |
Methods for Fabricating Multi-Terminal Phase Change Devices
App 20080206922 - Oliva; Antonietta ; et al. | 2008-08-28 |
Method and apparatus for programming phase change devices
App 20080025080 - Chan; Vei-Han ; et al. | 2008-01-31 |
Multi-terminal phase change devices
App 20070235707 - Kordus; Louis Charles II ; et al. | 2007-10-11 |
Reconfigurable logic structures
App 20070146012 - Murphy; Colin Neal ; et al. | 2007-06-28 |
Multi-terminal phase change devices
App 20070096071 - Kordus; Louis Charles II ; et al. | 2007-05-03 |
Content-addressable memory having phase change material devices
App 20070097740 - Derhacobian; Narbeh ; et al. | 2007-05-03 |
Methods for fabricating multi-terminal phase change devices
App 20070099405 - Oliva; Antonietta ; et al. | 2007-05-03 |
Electrically-alterable non-volatile memory cell
Grant 7,095,076 - Han , et al. August 22, 2 | 2006-08-22 |
Electrically-alterable non-volatile memory cell
Grant 6,788,574 - Han , et al. September 7, 2 | 2004-09-07 |
Nonvolatile memory cell with a nitridated oxide layer
Grant 6,750,157 - Fastow , et al. June 15, 2 | 2004-06-15 |
Method of programming a non-volatile memory cell using a baking process
Grant 6,618,290 - Wang , et al. September 9, 2 | 2003-09-09 |
Higher program VT and faster programming rates based on improved erase methods
Grant 6,590,811 - Hamilton , et al. July 8, 2 | 2003-07-08 |
Charge injection
Grant 6,567,303 - Hamilton , et al. May 20, 2 | 2003-05-20 |
Simultaneous formation of charge storage and bitline to wordline isolation
Grant 6,555,436 - Ramsbey , et al. April 29, 2 | 2003-04-29 |
Planar structure for non-volatile memory devices
Grant 6,541,816 - Ramsbey , et al. April 1, 2 | 2003-04-01 |
NAND array structure and method with buried layer
Grant 6,529,410 - Han , et al. March 4, 2 | 2003-03-04 |
Using hot carrier injection to control over-programming in a non-volatile memory cell having an oxide-nitride-oxide (ONO) structure
Grant 6,519,182 - Derhacobian , et al. February 11, 2 | 2003-02-11 |
Method of manufacturing high voltage transistor with modified field implant mask
Grant 6,514,830 - Fang , et al. February 4, 2 | 2003-02-04 |
Using a low drain bias during erase verify to ensure complete removal of residual charge in the nitride in sonos non-volatile memories
Grant 6,501,681 - Van Buskirk , et al. December 31, 2 | 2002-12-31 |
Simultaneous formation of charge storage and bitline to wordline isolation
App 20020192910 - Ramsbey, Mark T. ; et al. | 2002-12-19 |
Higher Program Vt And Faster Programming Rates Based On Improved Erase Methods
App 20020159293 - Hamilton, Darlene G. ; et al. | 2002-10-31 |
Simultaneous formation of charge storage and bitline to wordline isolation
Grant 6,465,306 - Ramsbey , et al. October 15, 2 | 2002-10-15 |
Method of manufacturing spacer etch mask for silicon-oxide-nitride-oxide-silicon (SONOS) type nonvolatile memory
Grant 6,465,303 - Ramsbey , et al. October 15, 2 | 2002-10-15 |
Method of programming a non-volatile memory cell using a substrate bias
Grant 6,456,536 - Sobek , et al. September 24, 2 | 2002-09-24 |
Higher program VT and faster programming rates based on improved erase methods
Grant 6,456,533 - Hamilton , et al. September 24, 2 | 2002-09-24 |
Tailored erase method using higher program VT and higher negative gate erase
Grant 6,442,074 - Hamilton , et al. August 27, 2 | 2002-08-27 |
Planar structure for non-volatile memory devices
App 20020063277 - Ramsbey, Mark T. ; et al. | 2002-05-30 |
Method for reducing processing steps when fabricating a flash memory array using a blank implant
App 20020031888 - Fang, Hao ; et al. | 2002-03-14 |
Intelligent ramped gate and ramped drain erasure for non-volatile memory cells
Grant 6,331,953 - Wang , et al. December 18, 2 | 2001-12-18 |
Nonlinear stepped programming voltage
Grant 6,327,183 - Pawletko , et al. December 4, 2 | 2001-12-04 |
Negative gate erase
Grant 6,307,784 - Hamilton , et al. October 23, 2 | 2001-10-23 |
Method of programming a non-volatile memory cell using a current limiter
Grant 6,269,023 - Derhacobian , et al. July 31, 2 | 2001-07-31 |
Core field isolation for a NAND flash memory
Grant 6,228,782 - Fang , et al. May 8, 2 | 2001-05-08 |
Method of maintaining constant erasing speeds for non-volatile memory cells
Grant 6,215,702 - Derhacobian , et al. April 10, 2 | 2001-04-10 |
Low voltage junction and high voltage junction optimization for flash memory
Grant 6,159,795 - Higashitani , et al. December 12, 2 | 2000-12-12 |
Method for reducing program disturb during self-boosting in a NAND flash memory
Grant 5,991,202 - Derhacobian , et al. November 23, 1 | 1999-11-23 |
High voltage NMOS pass gate having supply range, area, and speed advantages
Grant 5,909,396 - Le , et al. June 1, 1 | 1999-06-01 |
High voltage NMOS pass gate having supply range, area, and speed advantages
Grant 5,844,840 - Le , et al. December 1, 1 | 1998-12-01 |
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