loadpatents
name:-0.0048758983612061
name:-0.0098280906677246
name:-0.00059390068054199
Dennen; Michael W. Patent Filings

Dennen; Michael W.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Dennen; Michael W..The latest application filed is for "methods of fabricating field effect transistors including titanium nitride gates over partially nitrided oxide and devices so fabricated".

Company Profile
0.9.3
  • Dennen; Michael W. - Wake Forest NC
  • Dennen; Michael W. - Raleigh NC
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Methods Of Fabricating Field Effect Transistors Including Titanium Nitride Gates Over Partially Nitrided Oxide And Devices So Fabricated
App 20120264283 - Dennen; Michael W.
2012-10-18
Methods Of Fabricating Field Effect Transistors Including Titanium Nitride Gates Over Partially Nitrided Oxide And Devices So Fabricated
App 20100123206 - Dennen; Michael W.
2010-05-20
Trench gate fermi-threshold field effect transistors
Grant 6,555,872 - Dennen April 29, 2
2003-04-29
Offset Drain Fermi-threshold Field Effect Transistors
App 20020036328 - RICHARDS, JR., WILLIAM R. ;   et al.
2002-03-28
Methods of fabricating short channel fermi-threshold field effect transistors including drain field termination region
Grant 5,885,876 - Dennen March 23, 1
1999-03-23
Short channel fermi-threshold field effect transistors
Grant 5,814,869 - Dennen September 29, 1
1998-09-29
Fermi-threshold field effect transistors including source/drain pocket implants and methods of fabricating same
Grant 5,786,620 - Richards, Jr. , et al. July 28, 1
1998-07-28
Short channel fermi-threshold field effect transistors including drain field termination region and methods of fabricating same
Grant 5,698,884 - Dennen December 16, 1
1997-12-16
Contoured-tub fermi-threshold field effect transistor and method of forming same
Grant 5,543,654 - Dennen August 6, 1
1996-08-06
Method of fabricating field effect transistor having polycrystalline silicon gate junction
Grant 5,438,007 - Vinal , et al. August 1, 1
1995-08-01
High current fermi threshold field effect transistor
Grant 5,374,836 - Vinal , et al. * December 20, 1
1994-12-20
Field effect transistor having polycrystalline silicon gate junction
Grant 5,371,396 - Vinal , et al. December 6, 1
1994-12-06

uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.

While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.

All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.

© 2024 USPTO.report | Privacy Policy | Resources | RSS Feed of Trademarks | Trademark Filings Twitter Feed