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name:-0.010765075683594
name:-0.013931035995483
name:-0.0026719570159912
Deng; Xiaoshe Patent Filings

Deng; Xiaoshe

Patent Applications and Registrations

Patent applications and USPTO patent grants for Deng; Xiaoshe.The latest application filed is for "insulated gate bipolar transistor and manufacturing method therefor".

Company Profile
2.15.15
  • Deng; Xiaoshe - Jiangsu CN
  • Deng; Xiaoshe - Wuxi New District CN
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Field-stop reverse conducting insulated gate bipolar transistor and manufacturing method therefor
Grant 10,096,699 - Zhang , et al. October 9, 2
2018-10-09
Insulated gate bipolar transistor and manufacturing method therefor
Grant 10,084,036 - Zhong , et al. September 25, 2
2018-09-25
Semiconductor rectifier and manufacturing method thereof
Grant 10,062,746 - Zhong , et al. August 28, 2
2018-08-28
Insulated gate bipolar transistor and manufacturing method therefor
Grant 9,954,074 - Zhong , et al. April 24, 2
2018-04-24
Insulated Gate Bipolar Transistor And Manufacturing Method Therefor
App 20180102406 - ZHONG; Shengrong ;   et al.
2018-04-12
Insulated gate bipolar transistor and manufacturing method therefor
Grant 9,881,994 - Zhong , et al. January 30, 2
2018-01-30
Semiconductor Rectifier And Manufacturing Method Thereof
App 20170352722 - ZHONG; Shengrong ;   et al.
2017-12-07
Manufacturing method for reverse conducting insulated gate bipolar transistor
Grant 9,673,193 - Zhang , et al. June 6, 2
2017-06-06
Reverse conduction insulated gate bipolar transistor (IGBT) manufacturing method
Grant 9,666,682 - Wang , et al. May 30, 2
2017-05-30
IGBT manufacturing method
Grant 9,620,615 - Deng , et al. April 11, 2
2017-04-11
Method for removing polysilicon protection layer on a back face of an IGBT having a field stop structure
Grant 9,607,851 - Rui , et al. March 28, 2
2017-03-28
IGBT with built-in diode and manufacturing method therefor
Grant 9,595,520 - Deng , et al. March 14, 2
2017-03-14
Method for manufacturing insulated gate bipolar transistor
Grant 9,590,029 - Zhong , et al. March 7, 2
2017-03-07
Method for manufacturing injection-enhanced insulated-gate bipolar transistor
Grant 9,583,587 - Wang , et al. February 28, 2
2017-02-28
Method For Manufacturing Insulated Gate Bipolar Transistor
App 20160380048 - Zhong; Shengrong ;   et al.
2016-12-29
Igbt Manufacturing Method
App 20160380071 - DENG; Xiaoshe ;   et al.
2016-12-29
Manufacturing Method For Reverse Conducting Insulated Gate Bipolar Transistor
App 20160379974 - ZHANG; Shuo ;   et al.
2016-12-29
Insulated Gate Bipolar Transistor And Manufacturing Method Therefor
App 20160380072 - ZHONG; Shengrong ;   et al.
2016-12-29
Reverse Conduction Insulated Gate Bipolar Transistor (igbt) Manufacturing Method
App 20160372571 - Wang; Wanli ;   et al.
2016-12-22
Method For Manufacturing Injection-enhanced Insulated-gate Bipolar Transistor
App 20160372573 - Wang; Wanli ;   et al.
2016-12-22
Method for preparing power diode
Grant 9,502,497 - Wang , et al. November 22, 2
2016-11-22
Preparation method for power diode
Grant 9,502,534 - Zhong , et al. November 22, 2
2016-11-22
Method For Preparing Power Diode
App 20160307994 - Wang; Genyi ;   et al.
2016-10-20
Insulated Gate Bipolar Transistor And Manufacturing Method Therefor
App 20160307995 - Zhong; Shengrong ;   et al.
2016-10-20
Preparation Method For Power Diode
App 20160308029 - Zhong; Shengrong ;   et al.
2016-10-20
Field-stop reverse conducting insulated gate bipolar transistor and manufacturing method therefor
Grant 9,443,926 - Zhang , et al. September 13, 2
2016-09-13
Igbt With Built-in Diode And Manufacturing Method Therefor
App 20160240528 - DENG; Xiaoshe ;   et al.
2016-08-18
Field-stop Reverse Conducting Insulated Gate Bipolar Transistor And Manufacturing Method Therefor
App 20160240608 - ZHANG; Shuo ;   et al.
2016-08-18
Field-stop Reverse Conducting Insulated Gate Bipolar Transistor And Manufacturing Method Therefor
App 20160163841 - ZHANG; Shuo ;   et al.
2016-06-09
Method For Removing A Polysilicon Protection Layer On A Back Face Of An Igbt Having A Field Stop Structure
App 20150155182 - Rui; Qiang ;   et al.
2015-06-04

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