DENG; Shengling

Patent Applications and Registrations

Patent applications and USPTO patent grants for DENG; Shengling.The latest application filed is for "reverse recovery charge reduction in semiconductor devices".

Company Profile

2.6.6

DENG; Shengling - Chandler AZ

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Reverse Recovery Charge Reduction In Semiconductor Devices App 20210391422 - DENG; Shengling ; et al.	2021-12-16
Reverse recovery charge reduction in semiconductor devices Grant 11,133,381 - Deng , et al. September 28, 2	2021-09-28
Trench power MOSFET with integrated-schottky in non-active area Grant 11,004,839 - Deng , et al. May 11, 2	2021-05-11
Power MOSFET with an integrated pseudo-Schottky diode in source contact trench Grant 10,861,965 - Deng December 8, 2	2020-12-08
Power Mosfet With An Integrated Pseudo-schottky Diode In Source Contact Trench App 20200020798 - DENG; Shengling	2020-01-16
Reverse Recovery Charge Reduction In Semiconductor Devices App 20190326392 - DENG; Shengling ; et al.	2019-10-24
Insulated gate semiconductor device having a shield electrode structure and method Grant 9,842,925 - Deng , et al. December 12, 2	2017-12-12
Insulated Gate Semiconductor Device Having A Shield Electrode Structure And Method App 20170040447 - DENG; Shengling ; et al.	2017-02-09
Insulated gate semiconductor device having a shield electrode structure and method Grant 9,530,883 - Deng , et al. December 27, 2	2016-12-27
Insulated Gate Semiconductor Device Having A Shield Electrode Structure And Method App 20160126348 - DENG; Shengling ; et al.	2016-05-05
Insulated gate semiconductor device having a shield electrode structure Grant 9,269,779 - Deng , et al. February 23, 2	2016-02-23
Insulated Gate Semiconductor Device Having A Shield Electrode Structure App 20160020288 - DENG; Shengling ; et al.	2016-01-21

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