loadpatents
name:-0.017163038253784
name:-0.012493133544922
name:-0.0052149295806885
Decoutere; Stefaan Patent Filings

Decoutere; Stefaan

Patent Applications and Registrations

Patent applications and USPTO patent grants for Decoutere; Stefaan.The latest application filed is for "method of manufacturing a iii-n enhancement mode hemt device".

Company Profile
2.10.12
  • Decoutere; Stefaan - Haasrode BE
  • Decoutere; Stefaan - Leuven BE
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Group III-nitride based vertical power device and system
Grant 11,380,789 - Stoffels , et al. July 5, 2
2022-07-05
Method of Manufacturing a III-N Enhancement Mode HEMT Device
App 20220181159 - Posthuma; Niels ;   et al.
2022-06-09
3D power device and system
Grant 11,094,629 - Decoutere , et al. August 17, 2
2021-08-17
Group III-Nitride Based Vertical Power Device and System
App 20200243678 - Stoffels; Steve ;   et al.
2020-07-30
3D Power Device and System
App 20200203274 - Decoutere; Stefaan ;   et al.
2020-06-25
Schottky diode structure and method of fabrication
Grant 9,711,601 - Decoutere , et al. July 18, 2
2017-07-18
Low temperature ohmic contacts for III-N power devices
Grant 9,634,107 - De Jaeger , et al. April 25, 2
2017-04-25
Method for producing a semiconductor device comprising a Schottky diode and a high electron mobility transistor
Grant 9,431,511 - Decoutere , et al. August 30, 2
2016-08-30
Enhancement mode III-nitride device and method for manufacturing thereof
Grant 9,425,281 - Decoutere August 23, 2
2016-08-23
Integrated Circuit Comprising Group III-N Transistors Monolithically Integrated on a Silicon Substrate and a Method for Manufacturing Thereof
App 20160163695 - Decoutere; Stefaan ;   et al.
2016-06-09
Method for producing a semiconductor device comprising a Schottky diode and a high electron mobility transistor
Grant 9,276,082 - Decoutere , et al. March 1, 2
2016-03-01
Enhancement Mode Iii-nitride Device And Method For Manufacturing Thereof
App 20150318374 - Decoutere; Stefaan
2015-11-05
Method for Producing a Semiconductor Device Comprising a Schottky Diode and a High Electron Mobility Transistor
App 20150214327 - Decoutere; Stefaan ;   et al.
2015-07-30
Gringo heterojunction bipolar transistor with a metal extrinsic base region
Grant 9,041,149 - Boccardi , et al. May 26, 2
2015-05-26
III-nitride transistor with source-connected heat spreading plate
Grant 8,916,962 - Lenci , et al. December 23, 2
2014-12-23
Low Temperature Ohmic Contacts for III-N Power Devices
App 20140346568 - De Jaeger; Brice ;   et al.
2014-11-27
Method for Producing a Semiconductor Device Comprising a Schottky Diode and a High Electron Mobility Transistor
App 20140306235 - Decoutere; Stefaan ;   et al.
2014-10-16
III-Nitride Transistor with Source-Connected Heat Spreading Plate
App 20140159118 - Lenci; Sylvia ;   et al.
2014-06-12
Schottky Diode Structure And Method Of Fabrication
App 20140103357 - DECOUTERE; STEFAAN ;   et al.
2014-04-17
Enhancement Mode Iii-nitride Device And Method For Manufacturing Thereof
App 20130153923 - DECOUTERE; Stefaan
2013-06-20
Gringo Heterojunction Bipolar Transistor With A Metal Extrinsic Base Region
App 20110198671 - Boccardi; Guillaume ;   et al.
2011-08-18

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