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name:-0.012022018432617
name:-0.012772083282471
name:-0.016009092330933
DECOBERT; CATHERINE Patent Filings

DECOBERT; CATHERINE

Patent Applications and Registrations

Patent applications and USPTO patent grants for DECOBERT; CATHERINE.The latest application filed is for "method of forming a device with split gate non-volatile memory cells, hv devices having planar channel regions and finfet logic devices".

Company Profile
16.11.11
  • DECOBERT; CATHERINE - Pourrieres FR
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Method Of Forming A Device With Split Gate Non-volatile Memory Cells, HV Devices Having Planar Channel Regions And FINFET Logic Devices
App 20220231037 - Jourba; Serguei ;   et al.
2022-07-21
Method of forming split gate memory cells with thinned side edge tunnel oxide
Grant 11,362,218 - Kim , et al. June 14, 2
2022-06-14
Method Of Forming Split Gate Memory Cells With Thinned Side Edge Tunnel Oxide
App 20210399127 - Kim; Jinho ;   et al.
2021-12-23
Method of forming a device with FinFET split gate non-volatile memory cells and FinFET logic devices
Grant 11,114,451 - Zhou , et al. September 7, 2
2021-09-07
Method Of Forming A Device With FINFET Split Gate Non-volatile Memory Cells And FINFET Logic Devices
App 20210272973 - Zhou; Feng ;   et al.
2021-09-02
Method Of Forming A Device With Split Gate Non-volatile Memory Cells, HV Devices Having Planar Channel Regions And FINFET Logic Devices
App 20210193671 - Jourba; Serguei ;   et al.
2021-06-24
Method of forming split gate memory cells with thinned tunnel oxide
Grant 11,018,147 - Kim , et al. May 25, 2
2021-05-25
Memory cell with floating gate, coupling gate and erase gate, and method of making same
Grant 10,998,325 - Decobert , et al. May 4, 2
2021-05-04
Split gate non-volatile memory cells with FinFET structure and HKMG memory and logic gates, and method of making same
Grant 10,937,794 - Zhou , et al. March 2, 2
2021-03-02
Split gate non-volatile memory cells and logic devices with FINFET structure, and method of making same
Grant 10,818,680 - Zhou , et al. October 27, 2
2020-10-27
FinFET-based split gate non-volatile flash memory with extended source line FinFET, and method of fabrication
Grant 10,797,142 - Jourba , et al. October 6, 2
2020-10-06
Split gate non-volatile memory cells with three-dimensional FinFET structure
Grant 10,727,240 - Jourba , et al.
2020-07-28
Memory Cell With Floating Gate, Coupling Gate And Erase Gate, And Method Of Making Same
App 20200176460 - DECOBERT; CATHERINE ;   et al.
2020-06-04
FINFET-Based Split Gate Non-volatile Flash Memory With Extended Source Line FINFET, and Method Of Fabrication
App 20200176578 - Jourba; Serguei ;   et al.
2020-06-04
Split Gate Non-volatile Memory Cells With FINFET Structure And HKMG Memory And Logic Gates, And Method Of Making Same
App 20200176459 - Zhou; Feng ;   et al.
2020-06-04
Method of making split gate non-volatile memory cells with three-dimensional FinFET structure, and method of making same
Grant 10,644,012 - Jourba , et al.
2020-05-05
Split Gate Non-volatile Memory Cells And Logic Devices With FINFET Structure, And Method Of Making Same
App 20200013789 - Zhou; Feng ;   et al.
2020-01-09
Method Of Making Split Gate Non-Volatile Memory Cells With Three-Dimensional FINFET Structure, And Method Of Making Same
App 20200013788 - Jourba; Serguei ;   et al.
2020-01-09
Split Gate Non-Volatile Memory Cells With Three-Dimensional FINFET Structure, And Method Of Making Same
App 20200013786 - JOURBA; SERGUEI ;   et al.
2020-01-09
Split gate non-volatile memory cells and logic devices with FinFET structure, and method of making same
Grant 10,468,428 - Zhou , et al. No
2019-11-05
Split Gate Non-volatile Memory Cells And Logic Devices With Finfet Structure, And Method Of Making Same
App 20190326305 - ZHOU; FENG ;   et al.
2019-10-24
Two transistor FinFET-based split gate non-volatile floating gate flash memory and method of fabrication
Grant 10,312,247 - Jourba , et al.
2019-06-04

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