| Patent | Date |
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Selective Recessing To Form A Fully Aligned Via
App 20220181205 - Briggs; Benjamin D. ; et al. | 2022-06-09 |
Selective recessing to form a fully aligned via
Grant 11,257,717 - Briggs , et al. February 22, 2 | 2022-02-22 |
Selective Recessing To Form A Fully Aligned Via
App 20210082758 - Briggs; Benjamin D. ; et al. | 2021-03-18 |
Selective recessing to form a fully aligned via
Grant 10,832,952 - Briggs , et al. November 10, 2 | 2020-11-10 |
Field-effect transistors with self-aligned and non-self-aligned contact openings
Grant 10,833,160 - Aquilino , et al. November 10, 2 | 2020-11-10 |
Field-effect Transistors With Self-aligned And Non-self-aligned Contact Openings
App 20200335591 - Aquilino; Michael ; et al. | 2020-10-22 |
Selective recessing to form a fully aligned via
Grant 10,636,706 - Briggs , et al. | 2020-04-28 |
Multi-level air gap formation in dual-damascene structure
Grant 10,586,733 - Conti , et al. | 2020-03-10 |
Tone inversion method and structure for selective contact via patterning
Grant 10,453,751 - Qiu , et al. Oc | 2019-10-22 |
Methods, apparatus and system for providing a pre-RMG replacement metal contact for a finFET device
Grant 10,325,819 - Gao , et al. | 2019-06-18 |
Multi-level Air Gap Formation In Dual-damascene Structure
App 20190157140 - Conti; Richard A. ; et al. | 2019-05-23 |
Selective recessing to form a fully aligned via
Grant 10,276,436 - Briggs , et al. | 2019-04-30 |
Methods, apparatus and system for replacement contact for a finFET device
Grant 10,269,654 - Gao , et al. | 2019-04-23 |
Multi-level air gap formation in dual-damascene structure
Grant 10,224,239 - Conti , et al. | 2019-03-05 |
Metal silicate spacers for fully aligned vias
Grant 10,211,138 - Briggs , et al. Feb | 2019-02-19 |
Methods, apparatus, and system for reducing step height difference in semiconductor devices
Grant 10,204,797 - Gao , et al. Feb | 2019-02-12 |
Multi-level air gap formation in dual-damascene structure
Grant 10,204,827 - Conti , et al. Feb | 2019-02-12 |
Selective Recessing To Form A Fully Aligned Via
App 20180315654 - Briggs; Benjamin D. ; et al. | 2018-11-01 |
Selective Recessing To Form A Fully Aligned Via
App 20180315653 - Briggs; Benjamin D. ; et al. | 2018-11-01 |
Metal Silicate Spacers For Fully Aligned Vias
App 20180269144 - Briggs; Benjamin D. ; et al. | 2018-09-20 |
Tone Inversion Method And Structure For Selective Contact Via Patterning
App 20180261510 - QIU; Xiaofeng ; et al. | 2018-09-13 |
Metal silicate spacers for fully aligned vias
Grant 10,049,974 - Briggs , et al. August 14, 2 | 2018-08-14 |
Metal Silicate Spacers For Fully Aligned Vias
App 20180061750 - Briggs; Benjamin D. ; et al. | 2018-03-01 |
Selective Recessing To Form A Fully Aligned Via
App 20180040510 - Briggs; Benjamin D. ; et al. | 2018-02-08 |
Multi-level Air Gap Formation In Dual-damascene Structure
App 20180019202 - Conti; Richard A. ; et al. | 2018-01-18 |
Multi-level Air Gap Formation In Dual-damascene Structure
App 20180019203 - Conti; Richard A. ; et al. | 2018-01-18 |
Multi-level Air Gap Formation In Dual-damascene Structure
App 20180019200 - Conti; Richard A. ; et al. | 2018-01-18 |
Multi-level air gap formation in dual-damascene structure
Grant 9,859,212 - Conti , et al. January 2, 2 | 2018-01-02 |
Single spacer for complementary metal oxide semiconductor process flow
Grant 9,754,942 - Bergendahl , et al. September 5, 2 | 2017-09-05 |
Single spacer for complementary metal oxide semiconductor process flow
Grant 9,748,146 - Bergendahl , et al. August 29, 2 | 2017-08-29 |
Single Spacer For Complementary Metal Oxide Semiconductor Process Flow
App 20170229463 - BERGENDAHL; MARC A. ; et al. | 2017-08-10 |
Single Spacer For Complementary Metal Oxide Semiconductor Process Flow
App 20170229350 - BERGENDAHL; MARC A. ; et al. | 2017-08-10 |
Single spacer for complementary metal oxide semiconductor process flow
Grant 9,450,095 - Bergendahl , et al. September 20, 2 | 2016-09-20 |
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