| Patent | Date |
|---|
Cargo logistics platform
Grant 10,878,368 - Vaideeswaran , et al. December 29, 2 | 2020-12-29 |
Cargo Logistics Platform
App 20190318309 - VAIDEESWARAN; Ganesh ; et al. | 2019-10-17 |
Low loss electronic devices having increased doping for reduced resistance and methods of forming the same
Grant 10,181,532 - Das , et al. Ja | 2019-01-15 |
Silicon carbide switching devices including P-type channels
Grant 9,552,997 - Das , et al. January 24, 2 | 2017-01-24 |
Silicon carbide power devices including P-type epitaxial layers and direct ohmic contacts
Grant 8,866,150 - Das , et al. October 21, 2 | 2014-10-21 |
Low Loss Electronic Devices Having Increased Doping for Reduced Resistance and Methods of Forming the Same
App 20140266403 - Das; Mrinal Kanti ; et al. | 2014-09-18 |
Silicon Carbide Switching Devices Including P-Type Channels
App 20110121318 - Das; Mrinal Kanti ; et al. | 2011-05-26 |
Methods of forming silicon carbide switching devices including P-type channels
Grant 7,883,949 - Das , et al. February 8, 2 | 2011-02-08 |
Silicon carbide devices with hybrid well regions
Grant 7,705,362 - Das , et al. April 27, 2 | 2010-04-27 |
Methods Of Fabricating Silicon Carbide Power Devices By At Least Partially Removing An N-type Silicon Carbide Substrate, And Silicon Carbide Power Devices So Fabricated
App 20080296771 - Das; Mrinal Kanti ; et al. | 2008-12-04 |
Silicon Carbide Switching Devices Including P-type Channels And Methods Of Forming The Same
App 20080001158 - Das; Mrinal Kanti ; et al. | 2008-01-03 |
Silicon carbide devices with hybrid well regions
App 20060289874 - Das; Mrinal Kanti ; et al. | 2006-12-28 |
Methods of fabricating silicon carbide devices with hybrid well regions
Grant 7,118,970 - Das , et al. October 10, 2 | 2006-10-10 |
Method of fabricating an oxide layer on a silicon carbide layer utilizing an anneal in a hydrogen environment
Grant 7,067,176 - Das , et al. June 27, 2 | 2006-06-27 |
Nitrogen passivation of interface states in SiO.sub.2/SiC structures
Grant 7,022,378 - Das , et al. April 4, 2 | 2006-04-04 |
Methods of fabricating high voltage, high temperature capacitor and interconnection structures
Grant 6,998,322 - Das , et al. February 14, 2 | 2006-02-14 |
Silicon carbide devices with hybrid well regions and methods of fabricating silicon carbide devices with hybrid well regions
App 20050280004 - Das, Mrinal Kanti ; et al. | 2005-12-22 |
High voltage, high temperature capacitor and interconnection structures
Grant 6,972,436 - Das , et al. December 6, 2 | 2005-12-06 |
Silicon Carbide Power Metal-oxide Semiconductor Field Effect Transistors Having A Shorting Channel And Methods Of Fabricating Silicon Carbide Metal-oxide Semiconductor Field Effect Transistors Having A Shorting Channel
Grant 6,956,238 - Ryu , et al. October 18, 2 | 2005-10-18 |
Method of N2O growth of an oxide layer on a silicon carbide layer
Grant 6,767,843 - Lipkin , et al. July 27, 2 | 2004-07-27 |
Nitrogen passivation of interface states in SiO2/SiC structures
App 20040101625 - Das, Mrinal Kanti ; et al. | 2004-05-27 |
Methods of fabricating high voltage, high temperature capacitor and interconnection structures
App 20030160274 - Das, Mrinal Kanti ; et al. | 2003-08-28 |
Method of fabricating an oxide layer on a silicon carbide layer utilizing an anneal in a hydrogen environment
App 20020102358 - Das, Mrinal Kanti ; et al. | 2002-08-01 |
Method of N2O growth of an oxide layer on a silicon carbide layer
App 20020072247 - Lipkin, Lori A. ; et al. | 2002-06-13 |
Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field effect transistors having a shorting channel
App 20020038891 - Ryu, Sei-Hyung ; et al. | 2002-04-04 |
High voltage, high temperature capacitor structures and methods of fabricating same
App 20020030191 - Das, Mrinal Kanti ; et al. | 2002-03-14 |
| 