Das; Mrinal K.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Das; Mrinal K..The latest application filed is for "high speed, efficient sic power module".

Company Profile

4.23.22

Das; Mrinal K. - Durham NC
Das; Mrinal K. - Morrisville NC

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Low switching loss high performance power module Grant 11,171,229 - Das , et al. November 9, 2	2021-11-09
High Speed, Efficient Sic Power Module App 20200244164 - Das; Mrinal K. ; et al.	2020-07-30
Power module with improved reliability Grant 10,707,858 - Das , et al.	2020-07-07
High speed, efficient SiC power module Grant 10,680,518 - Das , et al.	2020-06-09
High Speed, Efficient Sic Power Module App 20200177079 - Das; Mrinal K. ; et al.	2020-06-04
High current, low switching loss SiC power module Grant 10,141,302 - Das , et al. Nov	2018-11-27
Power Module With Improved Reliability App 20180331679 - Das; Mrinal K. ; et al.	2018-11-15
Power module with improved reliability Grant 9,998,109 - Das , et al. June 12, 2	2018-06-12
High Performance Power Module App 20170213811 - Das; Mrinal K. ; et al.	2017-07-27
High performance power module Grant 9,640,617 - Das , et al. May 2, 2	2017-05-02
High Speed, Efficient Sic Power Module App 20160276927 - Das; Mrinal K. ; et al.	2016-09-22
HIGH CURRENT, LOW SWITCHING LOSS SiC POWER MODULE App 20160204101 - Das; Mrinal K. ; et al.	2016-07-14
High current, low switching loss SiC power module Grant 9,373,617 - Das , et al. June 21, 2	2016-06-21
Silicon carbide devices having smooth channels Grant 9,142,663 - Das , et al. September 22, 2	2015-09-22
Silicon Carbide Devices Having Smooth Channels App 20150028354 - Das; Mrinal K. ; et al.	2015-01-29
Methods of fabricating silicon carbide devices having smooth channels Grant 8,859,366 - Das , et al. October 14, 2	2014-10-14
HIGH CURRENT, LOW SWITCHING LOSS SiC POWER MODULE App 20140246681 - Das; Mrinal K. ; et al.	2014-09-04
Process for producing silicon carbide crystals having increased minority carrier lifetimes Grant 8,618,553 - Carter, Jr. , et al. December 31, 2	2013-12-31
High Performance Power Module App 20130248883 - Das; Mrinal K. ; et al.	2013-09-26
Methods of forming SiC MOSFETs with high inversion layer mobility Grant 8,536,066 - Das , et al. September 17, 2	2013-09-17
Methods of Fabricating Silicon Carbide Devices Having Smooth Channels and Related Devices App 20120228638 - Das; Mrinal K. ; et al.	2012-09-13
Silicon carbide devices having smooth channels Grant 8,188,483 - Das , et al. May 29, 2	2012-05-29
Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen Grant 8,119,539 - Das , et al. February 21, 2	2012-02-21
Process For Producing Silicon Carbide Crystals Having Increased Minority Carrier Lifetimes App 20100320477 - Carter, JR.; Calvin H. ; et al.	2010-12-23
Process for producing silicon carbide crystals having increased minority carrier lifetimes Grant 7,811,943 - Carter, Jr. , et al. October 12, 2	2010-10-12
Methods Of Forming Sic Mosfets With High Inversion Layer Mobility App 20100221924 - Das; Mrinal K. ; et al.	2010-09-02
Methods of forming SiC MOSFETs with high inversion layer mobility Grant 7,727,904 - Das , et al. June 1, 2	2010-06-01
Methods of Fabricating Oxide Layers on Silicon Carbide Layers Utilizing Atomic Oxygen App 20100009545 - Das; Mrinal K. ; et al.	2010-01-14
High voltage silicon carbide devices having bi-directional blocking capabilities Grant 7,615,801 - Ryu , et al. November 10, 2	2009-11-10
Silicon Carbide Devices Having Smooth Channels App 20090261351 - Das; Mrinal K. ; et al.	2009-10-22
Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen Grant 7,572,741 - Das , et al. August 11, 2	2009-08-11
Methods of fabricating silicon carbide devices having smooth channels Grant 7,528,040 - Das , et al. May 5, 2	2009-05-05
Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen App 20090004883 - Das; Mrinal K. ; et al.	2009-01-01
Methods of forming SIC MOSFETs with high inversion layer mobility App 20080233285 - Das; Mrinal K. ; et al.	2008-09-25
High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities Grant 7,414,268 - Ryu , et al. August 19, 2	2008-08-19
High voltage silicon carbide devices having bi-directional blocking capabilities Grant 7,391,057 - Ryu , et al. June 24, 2	2008-06-24
Methods of fabricating silicon carbide devices having smooth channels App 20060270103 - Das; Mrinal K. ; et al.	2006-11-30
High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same App 20060261346 - Ryu; Sei-Hyung ; et al.	2006-11-23
High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same App 20060261348 - Ryu; Sei-Hyung ; et al.	2006-11-23
High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities and methods of fabricating the same App 20060261347 - Ryu; Sei-Hyung ; et al.	2006-11-23
High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same App 20060261345 - Ryu; Sei-Hyung ; et al.	2006-11-23
Process for producing silicon carbide crystals having increased minority carrier lifetimes App 20060130742 - Carter; Calvin H. JR. ; et al.	2006-06-22

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