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name:-0.005457878112793
name:-0.00058603286743164
Dallesasse; John M. Patent Filings

Dallesasse; John M.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Dallesasse; John M..The latest application filed is for "high efficiency group iii-v compound semiconductor solar cell with oxidized window layer".

Company Profile
0.6.2
  • Dallesasse; John M. - Niles IL US
  • DALLESASSE; John M. - Geneva IL
  • Dallesasse; John M. - Wheaton IL
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
High efficiency group III-V compound semiconductor solar cell with oxidized window layer
Grant 9,356,162 - Pan , et al. May 31, 2
2016-05-31
High Efficiency Group Iii-v Compound Semiconductor Solar Cell With Oxidized Window Layer
App 20120227798 - PAN; Noren ;   et al.
2012-09-13
High Efficiency Group Iii-v Compound Semiconductor Solar Cell With Oxidized Window Layer
App 20100186822 - PAN; Noren ;   et al.
2010-07-29
Method for making aluminum gallium arsenide semiconductor device with native oxide layer
Grant 5,696,023 - Holonyak, Jr. , et al. December 9, 1
1997-12-09
Native oxide of an aluminum-bearing group III-V semiconductor
Grant 5,567,980 - Holonyak, Jr. , et al. October 22, 1
1996-10-22
Semiconductor devices with native aluminum oxide regions
Grant 5,373,522 - Holonyak, Jr. , et al. December 13, 1
1994-12-13
AlGaAs native oxide
Grant 5,262,360 - Holonyak, Jr. , et al. November 16, 1
1993-11-16

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