loadpatents
name:-0.055686235427856
name:-0.013103008270264
name:-0.0043838024139404
Dalida; Nicholas C. Patent Filings

Dalida; Nicholas C.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Dalida; Nicholas C..The latest application filed is for "use of cl2 and/or hcl during silicon epitaxial film formation".

Company Profile
0.8.7
  • Dalida; Nicholas C. - Fremont CA US
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Use of CL2 and/or HCL during silicon epitaxial film formation
Grant 8,586,456 - Ye , et al. November 19, 2
2013-11-19
Use Of Cl2 And/or Hcl During Silicon Epitaxial Film Formation
App 20110230036 - Ye; Zhiyuan ;   et al.
2011-09-22
Use of CL2 and/or HCL during silicon epitaxial film formation
Grant 7,960,256 - Ye , et al. June 14, 2
2011-06-14
Use Of Cl2 And/or Hcl During Silicon Epitaxial Film Formation
App 20100221902 - Ye; Zhiyuan ;   et al.
2010-09-02
Methods to fabricate MOSFET devices using a selective deposition process
Grant 7,737,007 - Samoilov , et al. June 15, 2
2010-06-15
Use of Cl2 and/or HCl during silicon epitaxial film formation
Grant 7,732,305 - Ye , et al. June 8, 2
2010-06-08
Use of Cl2 and/or HCl during silicon epitaxial film formation
Grant 7,682,940 - Ye , et al. March 23, 2
2010-03-23
Methods To Fabricate Mosfet Devices Using A Selective Deposition Process
App 20090011578 - SAMOILOV; ARKADII V. ;   et al.
2009-01-08
Methods to fabricate MOSFET devices using a selective deposition process
Grant 7,439,142 - Samoilov , et al. October 21, 2
2008-10-21
Methods To Fabricate Mosfet Devices Using A Selective Deposition Process
App 20070082451 - SAMOILOV; ARKADII V. ;   et al.
2007-04-12
Use of Cl2 and/or HCl during silicon epitaxial film formation
App 20060260538 - Ye; Zhiyuan ;   et al.
2006-11-23
Methods to fabricate MOSFET devices using selective deposition process
Grant 7,132,338 - Samoilov , et al. November 7, 2
2006-11-07
Use of CL2 and/or HCL during silicon epitaxial film formation
App 20060115933 - Ye; Zhiyuan ;   et al.
2006-06-01
Methods to fabricate MOSFET devices using selective deposition process
App 20050079692 - Samoilov, Arkadii V. ;   et al.
2005-04-14

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