| Patent | Date |
|---|
Method For Fabricating A Semiconductor Device Using Wet Etching And Dry Etching And Semiconductor Device
App 20220235470 - Roy; Saurabh ; et al. | 2022-07-28 |
Semiconductor Device with Integrated Current Sensor
App 20220165879 - Dainese; Matteo ; et al. | 2022-05-26 |
Power Semiconductor Device
App 20220140135 - Griebl; Erich ; et al. | 2022-05-05 |
Reverse-conducting igbt having a reduced forward recovery voltage
Grant 11,296,213 - Sandow , et al. April 5, 2 | 2022-04-05 |
Method of forming a power semiconductor device
Grant 11,257,946 - Griebl , et al. February 22, 2 | 2022-02-22 |
Semiconductor Device Including a Plurality of Trenches
App 20220045200 - Sandow; Christian Philipp ; et al. | 2022-02-10 |
Diode Including a Plurality of Trenches
App 20220045221 - Sandow; Christian Philipp ; et al. | 2022-02-10 |
Power Semiconductor Switch Having a Cross-Trench Structure
App 20210313460 - Dainese; Matteo ; et al. | 2021-10-07 |
Reverse-Conducting IGBT Having a Reduced Forward Recovery Voltage
App 20210296474 - Sandow; Christian Philipp ; et al. | 2021-09-23 |
Power transistor with dV/dt controllability and tapered mesas
Grant 11,114,528 - Dainese , et al. September 7, 2 | 2021-09-07 |
Power Semiconductor Device with p-contact
App 20210272843 - Beninger-Bina; Markus ; et al. | 2021-09-02 |
Semiconductor Component with Edge Termination Region
App 20210257489 - Mauder; Anton ; et al. | 2021-08-19 |
Isolation structure for IGBT devices having an integrated diode
Grant 11,075,291 - Dainese , et al. July 27, 2 | 2021-07-27 |
Power semiconductor device having a cross-trench arrangement
Grant 11,075,290 - Dainese , et al. July 27, 2 | 2021-07-27 |
Power Diode and Method of Manufacturing a Power Diode
App 20210226072 - Mauder; Anton ; et al. | 2021-07-22 |
Semiconductor component with edge termination region
Grant 11,018,249 - Mauder , et al. May 25, 2 | 2021-05-25 |
Power semiconductor device with reliably verifiable p-contact and method
Grant 11,018,051 - Beninger-Bina , et al. May 25, 2 | 2021-05-25 |
Power semiconductor switch with improved controllability
Grant 11,011,629 - Beninger-Bina , et al. May 18, 2 | 2021-05-18 |
Semiconductor Device Including A Transistor With One Or More Barrier Regions
App 20210134977 - Leendertz; Caspar ; et al. | 2021-05-06 |
Power diode and method of manufacturing a power diode
Grant 10,978,596 - Mauder , et al. April 13, 2 | 2021-04-13 |
Method of Processing a Power Semiconductor Device
App 20210050436 - Vellei; Antonio ; et al. | 2021-02-18 |
Semiconductor device comprising a barrier region
Grant 10,923,578 - Leendertz , et al. February 16, 2 | 2021-02-16 |
IGBT with dV/dt Controllability
App 20210043759 - Philippou; Alexander ; et al. | 2021-02-11 |
Semiconductor device with separation regions
Grant 10,903,344 - Baburske , et al. January 26, 2 | 2021-01-26 |
Power Semiconductor Device Having Overvoltage Protection And Method Of Manufacturing The Same
App 20200395472 - BENINGER-BINA; Markus ; et al. | 2020-12-17 |
Method for producing IGBT with dV/dt controllability
Grant 10,854,739 - Vellei , et al. December 1, 2 | 2020-12-01 |
IGBT with dV/dt controllability
Grant 10,840,362 - Philippou , et al. November 17, 2 | 2020-11-17 |
Method for manufacturing a semiconductor device
Grant 10,825,716 - Moser , et al. November 3, 2 | 2020-11-03 |
Semiconductor device with transistor cells and enhancement cells with delayed control signals
Grant 10,825,906 - Laven , et al. November 3, 2 | 2020-11-03 |
Power semiconductor device having overvoltage protection
Grant 10,790,384 - Beninger-Bina , et al. September 29, 2 | 2020-09-29 |
Power Semiconductor Device and Method of Forming a Power Semiconductor Device
App 20200235235 - Griebl; Erich ; et al. | 2020-07-23 |
Method for Producing IGBT with dV/dt Controllability
App 20200235232 - Vellei; Antonio ; et al. | 2020-07-23 |
Power Semiconductor Switch with Improved Controllability
App 20200168727 - Beninger-Bina; Markus ; et al. | 2020-05-28 |
Method for producing IGBT with dV/dt controllability
Grant 10,615,272 - Vellei , et al. | 2020-04-07 |
Power Semiconductor Device with Reliably Verifiable p-contact and Method
App 20200066579 - Beninger-Bina; Markus ; et al. | 2020-02-27 |
IGBT with dV/dt Controllability and Tapered Mesas
App 20190305083 - Dainese; Matteo ; et al. | 2019-10-03 |
Semiconductor Device with Separation Regions
App 20190288094 - Baburske; Roman ; et al. | 2019-09-19 |
Buried insulator regions and methods of formation thereof
Grant 10,410,911 - Schaeffer , et al. Sept | 2019-09-10 |
Power Semiconductor Device Having a Cross-Trench Arrangement
App 20190273155 - Dainese; Matteo ; et al. | 2019-09-05 |
Power Semiconductor Device
App 20190259863 - BINA; Markus ; et al. | 2019-08-22 |
Semiconductor device with separation regions
Grant 10,381,467 - Baburske , et al. A | 2019-08-13 |
Semiconductor Component with Edge Termination Region
App 20190237575 - Mauder; Anton ; et al. | 2019-08-01 |
Power semiconductor device
Grant 10,355,116 - Bina , et al. July 16, 2 | 2019-07-16 |
Semiconductor Device Comprising a Barrier Region
App 20190189772 - Leendertz; Caspar ; et al. | 2019-06-20 |
Semiconductor device with buried cavities and dielectric support structures
Grant 10,312,258 - Laven , et al. | 2019-06-04 |
Power semiconductor device with dV/dt controllability and cross-trench arrangement
Grant 10,304,952 - Dainese , et al. | 2019-05-28 |
Method for Manufacturing a Semiconductor Device
App 20190148217 - Moser; Andreas ; et al. | 2019-05-16 |
Reverse-blocking IGBT having a reverse-blocking edge termination structure
Grant 10,276,708 - Dainese , et al. | 2019-04-30 |
Method for Producing IGBT with dV/dt Controllability
App 20190123185 - Vellei; Antonio ; et al. | 2019-04-25 |
IGBT with dV/dt Controllability
App 20190123186 - Philippou; Alexander ; et al. | 2019-04-25 |
Method of manufacturing a semiconductor device having electrode trenches, isolated source zones and separation structures
Grant 10,217,837 - Baburske , et al. Feb | 2019-02-26 |
Power Diode and Method of Manufacturing a Power Diode
App 20190058065 - Mauder; Anton ; et al. | 2019-02-21 |
Semiconductor device
Grant 10,177,248 - Dainese , et al. J | 2019-01-08 |
Power Semiconductor Device with dV/dt Controllability and Cross-Trench Arrangement
App 20180342605 - Dainese; Matteo ; et al. | 2018-11-29 |
Semiconductor Device with Transistor Cells and Enhancement Cells
App 20180277642 - Laven; Johannes Georg ; et al. | 2018-09-27 |
Power Semiconductor Device
App 20180269313 - Bina; Markus ; et al. | 2018-09-20 |
Buried Insulator Regions and Methods of Formation Thereof
App 20180166324 - Schaeffer; Carsten ; et al. | 2018-06-14 |
Semiconductor device with transistor cells and enhancement cells with delayed control signals
Grant 9,997,602 - Laven , et al. June 12, 2 | 2018-06-12 |
Semiconductor Device with Separation Regions
App 20180145161 - Baburske; Roman ; et al. | 2018-05-24 |
Method of forming a semiconductor substrate with buried cavities and dielectric support structures
Grant 9,935,126 - Laven , et al. April 3, 2 | 2018-04-03 |
Method of Manufacturing a Semiconductor Device Having Electrode Trenches, Isolated Source Zones and Separation Structures
App 20180090594 - Baburske; Roman ; et al. | 2018-03-29 |
Semiconductor Device
App 20180083132 - Dainese; Matteo ; et al. | 2018-03-22 |
Semiconductor device with control structure including buried portions and method of manufacturing
Grant 9,917,186 - Laven , et al. March 13, 2 | 2018-03-13 |
Reverse-Blocking IGBT Having a Reverse-Blocking Edge Termination Structure
App 20180033627 - Dainese; Matteo ; et al. | 2018-02-01 |
Semiconductor device and reverse conducting insulated gate bipolar transistor with isolated source zones
Grant 9,876,100 - Baburske , et al. January 23, 2 | 2018-01-23 |
Method of manufacturing a semiconductor device having electrode trenches, isolated source zones and separation structures
Grant 9,837,506 - Baburske , et al. December 5, 2 | 2017-12-05 |
Method of manufacturing a reverse-blocking IGBT
Grant 9,741,570 - Dainese , et al. August 22, 2 | 2017-08-22 |
Semiconductor device with semiconductor mesa including a constriction
Grant 9,666,665 - Laven , et al. May 30, 2 | 2017-05-30 |
Method of Manufacturing a Semiconductor Device Having Electrode Trenches, Isolated Source Zones and Separation Structures
App 20170148893 - Baburske; Roman ; et al. | 2017-05-25 |
Semiconductor Device with Control Structure Including Buried Portions and Method of Manufacturing
App 20170110574 - Laven; Johannes ; et al. | 2017-04-20 |
Semiconductor device and insulated gate bipolar transistor with source zones formed in semiconductor mesas
Grant 9,570,577 - Baburske , et al. February 14, 2 | 2017-02-14 |
Semiconductor switching device including charge storage structure
Grant 9,543,398 - Laven , et al. January 10, 2 | 2017-01-10 |
Semiconductor device with control structure including buried portions and method of manufacturing
Grant 9,536,999 - Laven , et al. January 3, 2 | 2017-01-03 |
Method of Forming a Semiconductor Substrate With Buried Cavities and Dielectric Support Structures
App 20160322386 - Laven; Johannes ; et al. | 2016-11-03 |
Electrode and method of forming the master electrode
Grant 9,441,309 - Fredenberg , et al. September 13, 2 | 2016-09-13 |
Semiconductor Device with Transistor Cells and Enhancement Cells
App 20160190123 - Laven; Johannes Georg ; et al. | 2016-06-30 |
Semiconductor Device and Reverse Conducting Insulated Gate Bipolar Transistor with Isolated Source Zones
App 20160093724 - Baburske; Roman ; et al. | 2016-03-31 |
Method of Forming a Semiconductor Substrate With Buried Cavities and Dielectric Support Structures
App 20160071759 - Laven; Johannes Georg ; et al. | 2016-03-10 |
Semiconductor Device With Control Structure Including Buried Portions And Method Of Manufacturing
App 20160071974 - Laven; Johannes Georg ; et al. | 2016-03-10 |
Semiconductor device with a shielding structure
Grant 9,281,360 - Buchholz , et al. March 8, 2 | 2016-03-08 |
Semiconductor Switching Device Including Charge Storage Structure
App 20160056251 - Laven; Johannes Georg ; et al. | 2016-02-25 |
Semiconductor Device with a Shielding Structure
App 20160049463 - Buchholz; Karin ; et al. | 2016-02-18 |
Semiconductor device and reverse conducting insulated gate bipolar transistor with isolated source zones
Grant 9,231,091 - Baburske , et al. January 5, 2 | 2016-01-05 |
Semiconductor Device And Reverse Conducting Insulated Gate Bipolar Transistor With Isolated Source Zones
App 20150325688 - Baburske; Roman ; et al. | 2015-11-12 |
Semiconductor Device And Insulated Gate Bipolar Transistor With Source Zones Formed In Semiconductor Mesas
App 20150325687 - Baburske; Roman ; et al. | 2015-11-12 |
Semiconductor Device With Semiconductor Mesa Including A Constriction
App 20150295034 - Laven; Johannes Georg ; et al. | 2015-10-15 |
Electrode and Method of Forming the Master Electrode
App 20140110265 - Fredenberg; Mikael ; et al. | 2014-04-24 |
Electrode and method of forming the master electrode
Grant 8,617,362 - Fredenberg , et al. December 31, 2 | 2013-12-31 |
Electrode And Method Of Forming The Master Electrode
App 20120305390 - Fredenberg; Mikael ; et al. | 2012-12-06 |
Master Electrode And Method Of Forming It
App 20120267241 - Fredenberg; Mikael ; et al. | 2012-10-25 |
Master Electrode and Method of Forming the Master Electrode
App 20090229856 - Fredenberg; Mikael ; et al. | 2009-09-17 |
Electrode and method of forming the electrode
App 20090229854 - FREDENBERG; Mikael ; et al. | 2009-09-17 |
Electrode And Method Of Forming The Master Electrode
App 20090229855 - Fredenberg; Mikael ; et al. | 2009-09-17 |
Electrode And Method Of Forming The Electrode
App 20090229857 - FREDENBERG; Mikael ; et al. | 2009-09-17 |
Master Electrode And Method Of Forming It
App 20090071837 - Fredenberg; Mikael ; et al. | 2009-03-19 |
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