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name:-0.015523910522461
name:-0.0095000267028809
name:-0.024979114532471
DAI; Xiaowang Patent Filings

DAI; Xiaowang

Patent Applications and Registrations

Patent applications and USPTO patent grants for DAI; Xiaowang.The latest application filed is for "memory cell structure of a three-dimensional memory device".

Company Profile
24.13.16
  • DAI; Xiaowang - Wuhan CN
  • Dai; Xiaowang - Hubei CN
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Memory Cell Structure Of A Three-dimensional Memory Device
App 20210399001 - DAI; Xiaowang ;   et al.
2021-12-23
Staircase structure for memory device
Grant 11,145,666 - Lu , et al. October 12, 2
2021-10-12
Memory cell structure of a three-dimensional memory device
Grant 11,133,325 - Dai , et al. September 28, 2
2021-09-28
Word line contact structure for three-dimensional memory devices and fabrication methods thereof
Grant 11,101,276 - Zhu , et al. August 24, 2
2021-08-24
Through array contact (TAC) for three-dimensional memory devices
Grant 10,937,806 - Tao , et al. March 2, 2
2021-03-02
Memory Cell Structure Of A Three-dimensional Memory Device
App 20210005625 - DAI; Xiaowang ;   et al.
2021-01-07
Three-dimensional Memory Devices And Fabricating Methods Thereof
App 20200411547 - LU; Zhenyu ;   et al.
2020-12-31
Memory cell structure of a three-dimensional memory device
Grant 10,847,528 - Dai , et al. November 24, 2
2020-11-24
Three-dimensional memory devices and fabricating methods thereof
Grant 10,804,287 - Lu , et al. October 13, 2
2020-10-13
Staircase Structure For Memory Device
App 20200295019 - LU; Zhenyu ;   et al.
2020-09-17
Wafer flatness control using backside compensation structure
Grant 10,763,099 - Dai , et al. Sep
2020-09-01
Through Array Contact (tac) For Three-dimensional Memory Devices
App 20200266211 - TAO; Qian ;   et al.
2020-08-20
Word Line Contact Structure For Three-dimensional Memory Devices And Fabrication Methods Thereof
App 20200258837 - A1
2020-08-13
Memory Cell Structure Of A Three-dimensional Memory Device
App 20200243553 - DAI; Xiaowang ;   et al.
2020-07-30
Staircase Etch Control In Forming Three-dimensional Memory Device
App 20200203285 - LU; Zhenyu ;   et al.
2020-06-25
Staircase structure for memory device
Grant 10,680,003 - Lu , et al.
2020-06-09
Word line contact structure for three-dimensional memory devices and fabrication methods thereof
Grant 10,672,711 - Zhu , et al.
2020-06-02
Through array contact (TAC) for three-dimensional memory devices
Grant 10,658,378 - Tao , et al.
2020-05-19
Memory cell structure of a three-dimensional memory device
Grant 10,644,015 - Dai , et al.
2020-05-05
Wafer Flatness Control Using Backside Compensation Structure
App 20200058486 - Dai; Xiaowang ;   et al.
2020-02-20
Staircase etch control in forming three-dimensional memory device
Grant 10,522,474 - Lu , et al. Dec
2019-12-31
Method for forming dual-deck channel hole structure of three-dimensional memory device
Grant 10,515,975 - Tao , et al. Dec
2019-12-24
Method For Forming Dual-deck Channel Hole Structure Of Three-dimensional Memory Device
App 20190378849 - Tao; Qian ;   et al.
2019-12-12
Through Array Contact (tac) For Three-dimensional Memory Devices
App 20190341399 - TAO; Qian ;   et al.
2019-11-07
Memory Cell Structure Of A Three-dimensional Memory Device
App 20190096901 - DAI; Xiaowang ;   et al.
2019-03-28
Word Line Contact Structure For Three-dimensional Memory Devices And Fabrication Methods Thereof
App 20190096810 - ZHU; Jifeng ;   et al.
2019-03-28
Staircase Structure For Memory Device
App 20190081070 - LU; Zhenyu ;   et al.
2019-03-14
Three-dimensional Memory Devices And Fabricating Methods Thereof
App 20190074291 - Lu; Zhenyu ;   et al.
2019-03-07
Staircase Etch Control In Forming Three-dimensional Memory Device
App 20190051610 - LU; Zhenyu ;   et al.
2019-02-14

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